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M36W432BG Datasheet

Part NameDescriptionManufacturer
M36W432BG 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product ST-Microelectronics
STMicroelectronics ST-Microelectronics
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SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY
■ MEMORY BLOCKS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

 

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