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MC-45D32CD641 Datasheet

Part NameDescriptionManufacturer
MC-45D32CD641 32 M-WORD BY 64-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE NEC
NEC => Renesas Technology NEC
Other PDF  not available.
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Description
The MC-45D32CD641 is a 33,554,432 words by 64 bits DDR synchronous dynamic RAM module on which 16 pieces of 128M DDR SDRAM: µPD45D128842 are assembled.
These modules provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words by 64 bits organization
• Clock frequency
• Fully Synchronous Dynamic RAM with all signals except DM, DQS and DQ referenced
   to a positive clock edge
• Double Data Rate interface
   Differential CLK (/CLK) input
   Data inputs and DM are synchronized with both edges of DQS
   Data outputs and DQS are synchronized with a cross point of CLK and /CLK
• Quad internal banks operation
• Possible to assert random column address in every clock cycle
• Programmable Mode register set
   /CAS latency (2, 2.5)
   Burst length (2, 4, 8)
   Wrap sequence (Sequential / Interleave)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• 2.5 V ± 0.2 V Power supply for VDD
• 2.5 V ± 0.2 V Power supply for VDDQ
• SSTL_2 compatible with all signals
• 4,096 refresh cycles / 64 ms
• Burst termination by Precharge command and Burst stop command
• 184-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD
   The information in this document is subject to change without notice. Before using this
   document, please  confirm that this is the latest version.
   Not all devices/types available in every country. Please check with local NEC representative
   for availability and additional information.

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