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MDS1100 Datasheet

Part Name
Description
MFG CO.
MDS1100
APT
Advanced Power Technology  APT
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GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.


ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation

Device Dissipation @ 25°C1          8750 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 4.5 V
Collector Current (Ic) 100 A
Maximum Temperatures
Storage Temperature  -65 to +200 °C
Operating Junction Temperature  +200 °C

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Part Name
Description
PDF
MFG CO.
1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz
Microsemi Corporation
800 Watts, 50 Volts, Pulsed Avionics 1030 MHz
Unspecified
800 Watts, 50 Volts, Pulsed Avionics 1030 MHz
GHz Technology
400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
Unspecified
600 Watts, 50 Volts, Pulsed Avionics 1030 MHz
GHz Technology
175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz
New Jersey Semiconductor
500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
GHz Technology
500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz
GHz Technology
175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
GHz Technology
500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
GHz Technology

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