GENERAL DESCRIPTION
The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1 8750 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 65 V
Emitter to Base Voltage (BVebo) 4.5 V
Collector Current (Ic) 100 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
| Part Name | Description | PDF | Manufacturer |
| MDS1100 |
1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz |
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Microsemi Corporation
|
| TCS800 |
800 Watts, 50 Volts, Pulsed Avionics 1030 MHz |
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Unspecified
|
| TCS800 |
800 Watts, 50 Volts, Pulsed Avionics 1030 MHz |
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GHz Technology
|
| TPR700 |
700 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz |
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GHz Technology
|
| TPR175 |
175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz |
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GHz Technology
|
| 10500 |
500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz |
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GHz Technology
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz |
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Microsemi Corporation
|
| TPR175 |
175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz |
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New Jersey Semiconductor
|
| MDS350L |
350 Watts, 45 Volts, Pulsed Avionics 1030 - 1090 MHz |
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|
GHz Technology
|
| MDS170 |
170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz high power COMMON BASE bipolar transistor |
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|
GHz Technology
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