Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Part Name  
Home >>> Mitsubishi >>> MGF0905A_1 Datasheet

MGF0905A_1 Datasheet

Part NameDescriptionManufacturer
MGF0905A_1 GaAs FET with an N-channel schottky gate L,S BAND POWER GaAs FET  Mitsubishi
MITSUBISHI ELECTRIC  Mitsubishi
Other PDF  not available.
PDF DOWNLOAD     
MGF0905A_1 image

DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.
FEATURES
High output power
   Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
   Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
   P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm

APPLICATION
For UHF Band power amplifiers

QUALITY
GG

RECOMMENDED BIAS CONDITIONS
Vds=8V
Ids=800mA
Rg=100Ω
Refer to Bias Procedure

Page Links : 1  2  3  4 
 

Other manufacturer searches related to MGF0905A_1

Part NameDescriptionPDFManufacturer
NEZ5258-4B 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET View NEC => Renesas Technology
CF750 GaAs MMIC(Biased Dual Gate GaAs FET) View Siemens AG
FLC167WF C-Band Power GaAs FET View Fujitsu
MGF0906 L, S BAND POWER GaAs FET View Mitsumi
MGF0907 L,S BAND POWER GaAs FET View Mitsumi
MGF0909 L, S BAND POWER GaAs FET View Mitsumi
FLK017WF X, Ku Band Power GaAs FET View Eudyna Devices Inc
FLU35ZM L-Band Medium & High Power GaAs FET View Unspecified
FLL410IK-3C L-Band High Power GaAs FET View Eudyna Devices Inc
FLL107ME L-Band Medium & High Power GaAs FET View Eudyna Devices Inc

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]