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MMBD4448W Datasheet

Part NameDescriptionManufacturer
MMBD4448W SOT-323 Plastic-Encapsulate DIODE YEASHIN
Yea Shin Technology Co., Ltd YEASHIN
Other PDF  not available.
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MMBD4448W image

SWITCHING DIODE

FEATURES
  Power dissipation
     PD: 200 mW (Tamb=25℃ )
  Collector current
     IO: 250 mA
  Collector-base voltage
     VR: 75 V
  Operating and storage junction temperature range
     TJ, Tstg: -55℃ to +150℃

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