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NDS351AN Datasheet

Part NameDescriptionManufacturer
NDS351AN N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild Semiconductor Fairchild
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General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Features
■ 1.2A, 30 V.  RDS(ON) = 0.25 Ω @ VGS = 4.5 V
                       RDS(ON) = 0.16 Ω @ VGS = 10 V.
■ Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.
■ Compact industry standard SOT-23 surface mount

 

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