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NDS352AP Datasheet

Part NameDescriptionManufacturer
NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Twtysemi
TY Semiconductor Twtysemi
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General Description
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features
■ -0.9 A, -30 V.  RDS(ON) = 0.5 Ω @ VGS = -4.5 V
                           RDS(ON) = 0.3 Ω @ VGS = -10 V.
■ Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
■ High density cell design for extremely low RDS(ON).
■ Exceptional on-resistance and maximum DC current capability.

 

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