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NDT410EL Datasheet

Part NameDescriptionManufacturer
NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor Fairchild
Fairchild Semiconductor Fairchild
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General Description
Power SOT N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features
■ 2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.

 

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