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NE4210M01-T1 Datasheet

Part NameDescriptionManufacturer
NE4210M01-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NEC
NEC => Renesas Technology NEC
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DESCRIPTION
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

FEATURES
• Super Low Noise Figure & High Associated Gain
    NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz
• 6pin super minimold package
• Gate Width: Wg = 200µm

 

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