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NE661M04 Datasheet

Part NameDescriptionManufacturer
NE661M04 NPN SILICON HIGH FREQUENCY TRANSISTOR CEL
California Eastern Laboratories. CEL
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DESCRIPTION
NECs NE661M04 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE661M04 is usable in applications from 100 MHz to 10 GHz. The NE661M04 provides excellent low voltage/low current performance.
NECs new low profile/flat lead style "M04" package is ideal for todays portable wireless applications. The NE661M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.

FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• HIGH POWER GAIN: IS21EI2 = 17 dB TYP at 2 GHz
• LOW NOISE FIGURE: NF = 1.2 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 22 dB @ 2 GHz
• NEW LOW PROFILE M04 PACKAGE:
    SOT-343 footprint, with a height of just 0.59 mm.
    Flat Lead Style for better RF performance.

 

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