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NE8500100 Datasheet

Part NameDescriptionManufacturer
NE8500100 C-BAND MEDIUM POWER GaAs MESFET CEL
California Eastern Laboratories. CEL
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DESCRIPTION
The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form. The chip is a two cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NECs stringent quality assurance standards to ensure highest reliability and consistent superior performance.

FEATURES
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
• HIGH EFFICIENCY: 37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100

 

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