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NGD8201AN Datasheet

Part NameDescriptionManufacturer
NGD8201AN 20 A, 400 V, N-Channel Ignition IGBT, DPAK Littelfuse
Littelfuse, Inc Littelfuse
Other PDF  2016  
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Image Info : [Littelfuse] NGD8201AN

Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• DPAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Emitter Ballasting for Short−Circuit Capability
• These are Pb−Free Devices

 

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