Description:
The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits.
Part Name | Description | PDF | Manufacturer |
2SC5071 |
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) |
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Sanken Electric co.,ltd.
|
2SC3840 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING |
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|
Renesas Electronics
|
CSL13003 |
NPN SILICON PLANAR EPITAXIAL,HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR |
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|
Rectron Semiconductor
|
C3569 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING |
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|
NEC => Renesas Technology
|
CSD13002 |
NPN SILICON PLANAR EPITAXIAL, HIGH SPEED,HIGH VOLTAGE SWITCHING TRANSISTOR |
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Continental Device India Limited
|
BU508AF |
High voltage,high-speed switching NPN Silicon diffused power transistor. |
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|
Wing Shing International Group
|
NTE64 |
Silicon NPN Transistor UHF High Speed Switch |
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NTE Electronics
|
BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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|
Semelab - > TT Electronics plc
|
BUL66A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
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|
Semelab - > TT Electronics plc
|
BUL56B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
View
|
Semelab - > TT Electronics plc
|