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NX25F011B Datasheet

Part NameDescriptionManufacturer
NX25F011B 1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE ETC1
ETC1 
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NX25F041B image

[NexFlash]

DESCRIPTION
The NX25F011B, NX25F021B, and NX25F041B Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlashs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 2.5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, and maximize battery life.

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