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RFL1P08 Datasheet

Part Name
Description
MFG CO.
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Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 1 A, -80V and -100V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device

 

Part Name
Description
PDF
MFG CO.
1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
Intersil
-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
Intersil
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
Intersil
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
Intersil
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
Intersil
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
Intersil
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
Harris Semiconductor
18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs
Intersil
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
Intersil
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil

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