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SST29EE010A Datasheet - SST

Part Name
Description
MFG CO.
SST29EE010A
SST
Silicon Storage Technology SST
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PRODUCT DESCRIPTION
The SST29EE010A/29LE010A/29VE010A are 128K x 8 CMOS Page Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST29EE010A/29LE010A/29VE010A write with a single power supply. Internal Erase/Program is transparent to the user. The SST29EE010A/29LE010A/29VE010A conform to JEDEC standard pinouts for bytewide memories.

FEATURES:
• Single Voltage Read and Write Operations
    – 5.0V-only for the SST29EE010A
    – 3.0-3.6V for the SST29LE010A
    – 2.7-3.6V for the SST29VE010A
• Superior Reliability
    – Endurance: 100,000 Cycles (typical)
    – Greater than 100 years Data Retention
• Low Power Consumption
    – Active Current: 20 mA (typical) for 5V and 10 mA (typical) for 3.0/2.7V
    – Standby Current: 10 µA (typical)
• Fast Page Write Operation
    – 128 Bytes per Page, 1024 Pages
    – Page Write Cycle: 5 ms (typical)
    – Complete Memory Rewrite: 5 sec (typical)
    – Effective Byte Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
    – 5.0V-only operation: 90 and 120 ns
    – 3.0-3.6V operation: 150 and 200 ns
    – 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
    – Internal VPP Generation
• End of Write Detection
    – Toggle Bit
    – Data# Polling
• Hardware and Software Data Protection
• TTL I/O Compatibility
• JEDEC Standard
    – Flash EEPROM Pinouts and command sets
• Packages Available
    – 32 Pin PDIP
    – 32-Pin PLCC
    – 32-Pin TSOP (8mm x 20mm & 8mm x 14mm)

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