This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.018 Ω
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
■ HIGH CURRENT, SWITCHING APPLICATIONS