Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits
Home >>> ETC1 >>> UD61256 Datasheet

UD61256 Datasheet

Part NameDescriptionManufacturer
UD61256 256K x 1 DRAM ETC1
ETC1 
Other PDF  not available.
PDF DOWNLOAD     
UD61256 image

[Zentrum]

Description
Addressing
The UD61256 is a dynamic Write Read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation. The falling RAS edge takes over the row address. During RAS Low, the column address together with the CAS signal are taken over. The selection of one or more memory circuits can be made by activation of the RAS input.

Read-Write-Control
The choice between Read or Write cycle is made at the W input. HIGH at the W input causes a Read cycle, meanwhile LOW leads to a Write cycle.
Both CAS-controlled and W-control led Write cycles are possible with activated RAS signal.

Features
❐ Dynamic random access memory 262144 x 1 bit manufactured using a CMOS technology
❐ RAS access times 70 ns, 80 ns
❐ TTL-compatible
❐ Three-state output
❐ 256 refresh cycles 4 ms refresh cycle time
❐ FAST PAGE MODE
❐ Operating modes: Read, Write, Read - Write, RAS only Refresh, Hidden Refresh with address transfer
❐ Power Supply Voltage 5 V
❐ Packages PDIP16 (300 mil) SOJ20/26 (300 mil)
❐ Operating temperature range 0 to 70 °C
❐ Quality assessment according to CECC 90000, CECC 90100 and CECC 90112

 

Page Links : 1  2  3  4  5  6  7  8  9  10  11  12  13 
 

Other manufacturer searches related to UD61256

Part NameDescriptionPDFManufacturer
HY534256A 256K x 4-bit CMOS DRAM View Hynix Semiconductor
UD61256 256K x 1 DRAM View Zentrum Mikroelektronik Dresden AG
HY534256AJ 256K x 4-bit CMOS DRAM View Hyundai Micro Electronics
GS880E32BT-225 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs View Giga Semiconductor
AS4C256K16F0-25JC 5V 256K X 16 CMOS DRAM (Fast Page Mode) View Alliance Semiconductor
HY534256AJ-70 256K x 4-bit CMOS DRAM View Hyundai Micro Electronics
CY7C197D 256K (256K x 1) Static RAM View Cypress Semiconductor
5962-8949703MMA 256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM View Austin Semiconductor
MT48LC8M16A2TG-6A_02ADD SYNCHRONOUS DRAM View Micron Technology
74F1763 Intelligent DRAM controller (IDC) View Philips Electronics

Share Link : 
All Rights Reserved© datasheetq.com 2015 - 2019  ] [ Privacy Policy ] [ Request Datasheet  ] [ Contact Us ]