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VB20150C Datasheet

Part NameDescriptionManufacturer
VB20150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Semiconductors Vishay
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Ultra Low VF = 0.59 V at IF = 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS
  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

 

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