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VB30100C-E3-8W Datasheet

Part NameDescriptionManufacturer
VB30100C-E3-8W Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Semiconductors Vishay
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Ultra Low VF = 0.455 V at IF = 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS
  For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.

 

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