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VB30100C Datasheet

Part NameDescriptionManufacturer
VB30100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay Semiconductors Vishay
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Ultra Low VF= 0.455 V at IF= 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

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