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VNS1NV04D13TR Datasheet

Part Name
Description
MFG CO.
VNS1NV04D13TR
ST-Microelectronics
STMicroelectronics ST-Microelectronics
Other PDF
  2013  
PDF
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VNS1NV04D13TR image

DESCRIPTION
The VNS1NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications.
   
■ LINEAR CURRENT LIMITATION
■ THERMAL SHUT DOWN
■ SHORT CIRCUIT PROTECTION
■ INTEGRATED CLAMP
■ LOW CURRENT DRAWN FROM INPUT PIN
■ DIAGNOSTIC FEEDBACK THROUGH INPUT
    PIN
■ ESD PROTECTION
■ DIRECT ACCESS TO THE GATE OF THE
    POWER MOSFET (ANALOG DRIVING)
■ COMPATIBLE WITH STANDARD POWER
    MOSFET
   

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Part Name
Description
PDF
MFG CO.
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
STMicroelectronics
"OMNIFET" fully autoprotected Power MOSFET
STMicroelectronics
FULLY PROTECTED POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
International Rectifier
FULLY PROTECTED POWER MOSFET SWITCH
International Rectifier

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