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Part Name(s) : IDT71V124S15 IDT71V124S15Y IDT71V124S15YI IDT71V124S20 IDT71V124S20Y IDT71V124S20YI IDT
Integrated Device Technology
Description : 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout View

Description

The IDT71V124 is a 1,048,576-bit high-speed Static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective solution for high-speed memory needs. The JEDEC center power/GND Pinout reduces noise generation and improves system

performance.

The IDT71V124 has an output enable pin which operates as fast as 7ns, with address access times as fast as 15ns available. All bidirec tional inputs and outputs of the IDT71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully Static asynchronous circuitry is used; no clocks or refreshes are required for operation. The IDT71V124 is packaged in 32-pin 400 mil Plastic SOJ.



IN

Features

128K x 8 advanced high-speed CMOS Static RAM

◆JEDEC Revolutionary Pinout (center power/GND) for reduced noise

◆Commercial (0°C  to +70°C) and Industrial (–40°C to +85°C) temperature options

◆Equal access and cycle times — Industrial and Commercial: 15/20ns

◆One Chip Select plus one Output Enable pin

◆Bidirectional inputs and outputs directly LVTTL-compatible

◆Low power consumption via chip deselect

◆Available in 32-pin 400 mil Plastic SOJ.



 


Part Name(s) : 71V124SA12TYG8 IDT71V124 IDT71V124SA IDT71V124SA10 IDT71V124SA10PH IDT71V124SA10PHI IDT71V124SA10TY IDT71V124SA10TYI IDT71V124SA10Y IDT71V124SA10YI IDT
Integrated Device Technology
Description : 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout View

Description

The IDT71V124 is a 1,048,576-bit high-speed Static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high

speed memory needs. The JEDEC center power/GND Pinout reduces noise generation and improves system performance.

The IDT71V124 has an output enable pin which operates as fast as 5ns, with address access times as fast as 9ns available. All bidirectional inputs and outputs of the IDT71V124 are LVTTL-compatible and operation is from a single 3.3V supply. Fully Static asynchronous circuitry is used; no clocks or refreshes are required for operation.



Features

128K x 8 advanced high-speed CMOS Static RAM

◆JEDEC Revolutionary Pinout (center power/GND) for reduced noise

◆Equal access and cycle times

– Commercial: 10/12/15/20ns

– Industrial: 10/12/15/20ns

◆One Chip Select plus one Output Enable pin

◆Inputs and outputs are LVTTL-compatible

◆Single 3.3V supply

◆Low power consumption via chip deselect

◆Available in a 32-pin 300- and 400-mil Plastic SOJ, and 32-pin Type II TSOP packages.


Part Name(s) : IS63LV1024 IS63LV1024-10J IS63LV1024-10K IS63LV1024-10KI IS63LV1024-10T IS63LV1024-12J IS63LV1024-12KL IS63LV1024-12T IS63LV1024-12TI IS63LV1024-8K ISSI
Integrated Silicon Solution
Description : 128K x 8 HIGH-SPEED CMOS Static RAM 3.3V Revolutionary Pinout View

DESCRIPTION

The ISSIIS63LV1024/IS63LV1024L is a very high-speed, low power, 131,072-word by 8-Bit CMOS Static RAM in Revolutionary Pinout. The IS63LV1024/IS63LV1024L is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.



FEATURES

• High-speed access times: 8, 10, 12 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for greater noise immunity

• Easy memory expansion with CE and OE options

• CEpower-down

• Fully Static operation: no clock or refresh required

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

  – 32-pin 300-mil SOJ

  – 32-pin 400-mil SOJ

  – 32-pin TSOP (Type II)

  – 32-pin STSOP (Type I)

  – 36-pin BGA (8mmx10mm)

• Lead-free Available


Part Name(s) : IDT71024S70 IDT71024S70TY IDT71024S70Y IDT
Integrated Device Technology
Description : CMOS Static RAM 1 MEG (128K x 8-Bit) View

DESCRIPTION:
The IDT71024 is a 1,048,576-bit medium-speed Static RAM organized as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for your memory needs.

FEATURES:
128K x 8 CMOS Static RAM
• Equal access and cycle times
   — Commercial: 70ns
• Two Chip Selects plus one Output Enable pin
• Bidirectional inputs and outputs directly TTL-compatible
• Low power consumption via chip deselect
• Available in 300 and 400 mil Plastic SOJ packages


Part Name(s) : MCM63Z737 MCM63Z819 MCM63Z737TQ11 MCM63Z737TQ15 MCM63Z737TQ11R MCM63Z737TQ15R MCM63Z819TQ11 MCM63Z819TQ15 MCM63Z819TQ11R MCM63Z819TQ15R Motorola
Motorola => Freescale
Description : 128K x 36 and 256K x 18 Bit Flow–Through ZBT™ RAM Synchronous Fast Static RAM View

The ZBT RAM is a 4M–bit synchronous fast Static RAM designed to provide zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM63Z737 is organized as 128K words of 36 bits each and the MCM63Z819 is organized as 256K words of 18 bits each, fabricated with high performance silicon gate CMOS technology.

• 3.3 V LVTTL and LVCMOS Compatible
• MCM63Z737/MCM63Z819–11 = 11 ns Access/15 ns Cycle (66 MHz)
    MCM63Z737/MCM63Z819–15 = 15 ns Access/20 ns Cycle (50 MHz)
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Internally Self–Timed Write Cycle
• Single–Cycle Deselect
• Byte Write Control
• ADV Controlled Burst
• 100–Pin TQFP Package

Part Name(s) : IDT71024 IDT71024S12TY IDT71024S12Y IDT71024S15TY IDT71024S15Y IDT71024S15YI IDT71024S17TY IDT71024S17Y IDT71024S20TY IDT71024S20Y IDT
Integrated Device Technology
Description : CMOS Static RAM 1 MEG (128K x 8-Bit) View

DESCRIPTION:
The IDT71024 is a 1,048,576-bit high-speed Static RAM organized as 128K x 8. It is fabricated using IDT’s highperformance, high-reliability CMOS technology. This stateof-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

FEATURES:
128K x 8 advanced high-speed CMOS Static RAM
• Commercial (0° to 70°C), Industrial (-40° to 85°C) and
   Military (-55° to 125°C) temperature options
• Equal access and cycle times
   — Military: 15/17/20/25ns
   — Industrial: 15/20ns
   — Commercial: 12/15/17/20ns
• Two Chip Selects plus one Output Enable pin
• Bidirectional inputs and outputs directly TTL-compatible
• Low power consumption via chip deselect
• Available in 300 and 400 mil Plastic SOJ, and LCC packages
• Military product compliant to MIL-STD-883, Class B

Part Name(s) : MCM63Z736 MCM63Z818 MCM63Z736TQ133 MCM63Z736TQ100 MCM63Z736TQ133R MCM63Z736TQ100R MCM63Z818TQ133 MCM63Z818TQ100 MCM63Z818TQ133R MCM63Z818TQ100R Motorola
Motorola => Freescale
Description : 128K x 36 and 256K x 18 Bit Pipelined ZBT™ RAM Synchronous Fast Static RAM View

The ZBT RAM is a 4M–bit synchronous fast Static RAM designed to provide zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM63Z736 is organized as 128K words of 36 bits each and the MCM63Z818 is organized as 256K words of 18 bits each, fabricated with high performance silicon gate CMOS technology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in communication applications. Synchronous design allows precise cycle control with the use of an external clock (CK). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.

• 3.3 V LVTTL and LVCMOS Compatible
• MCM63Z736/MCM63Z818–133 = 4.2 ns Access/7.5 ns Cycle (133 MHz)
    MCM63Z736/MCM63Z818–100 = 5 ns Access/10 ns Cycle (100 MHz)
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Internally Self–Timed Write Cycle
• Two–Cycle Deselect
• Byte Write Control
• ADV Controlled Burst
• 100–Pin TQFP Package

Part Name(s) : IDT71024S IDT71024S12TY8 IDT71024S12TYI IDT71024S12TYI8 IDT71024S12TYG IDT71024S12TYG8 IDT71024S12TYGI IDT71024S12TYGI8 IDT71024S12Y8 IDT71024S12YI IDT
Integrated Device Technology
Description : CMOS Static RAM 1 Meg (128K x 8-Bit) View

Description
The IDT71024 is a 1,048,576-bit high-speed Static RAM organized as 128K x 8. It is fabricated using high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

Features
128K x 8 advanced high-speed CMOS Static RAM
◆ Commercial (0°C to +70°C), Industrial (–40°C to +85°C)
◆ Equal access and cycle times
   — Commercial and Industrial: 12/15/20ns
◆ Two Chip Selects plus one Output Enable pin
◆ Bidirectional inputs and outputs directly
   TTL-compatible
◆ Low power consumption via chip deselect
◆ Available in 300 and 400 mil Plastic SOJ.

Part Name(s) : 71V416 IDT71V416 IDT71V41612Y IDT71V41615Y IDT71V41620Y ETC
Unspecified
Description : 3.3V CMOS Static RAM 4 MEG (256K x 16-BIT) View

[Integrated Device Technology, Inc.]



DESCRIPTION:

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high perfomance, high-reliability CMOS technology. This state-of the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71V416 are TTL compatible and operation is from a single 3.3V supply. Fully Static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The IDT71V416 is packaged in a 44-pin, 400mil Plastic SOJ.



FEATURES:

• 256K x 16 advanced high-speed CMOS Static RAM

• JEDEC Center Power /GND Pinout for reduced noise

• Equal access and cycle times

   — 12/15/20ns

• Single 3.3V power supply

• One Chip Select plus one Output Enable pin

• Bidirectional data inputs and outputs directly TTL-compatible

• Low power consumption via chip deselect

• Upper and Lower Byte Enable Pins

• Available in 44-pin, 400 mil plastic SOJ package



 


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