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Part Name(s) : FM27C010V25 NM27C010 NM27C010Q70 NM27C010Q90 NM27C010Q120 NM27C010Q150 NM27C010V70 NM27C010V90 NM27C010V120 NM27C010V150 FAIRCHILDSEMICONDUCTOR
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) High Performance CMOS EPROM View

General Description
The NM27C010 is a High Performance, 1,048,576-Bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with no printed circuit board changes.

Features
High Performance CMOS
    —70 ns access time
■ Fast turn-off for microprocessor compatibility
■ Simplified upgrade path
    —VPP and PGM are “Don’t Care” during normal read operation
■ Manufacturers identification code
■ Fast programming
■ JEDEC standard pin configurations
    —32-pin PDIP package
    —32-pin PLCC package
    —32-pin CERDIP package

Part Name(s) : FM27C010 FM27C010N FM27C010N120 FM27C010N150 FM27C010N90 FM27C010DWF FM27C010Q45 FM27C010T45 FM27C010NE120 FM27C010NE150 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) High Performance CMOS EPROM View

General Description
The FM27C010 is a High Performance, 1,048,576-Bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with no printed circuit board changes.

Features
High Performance CMOS
  —70 ns access time
■ Fast turn-off for microprocessor compatibility
■ Simplified upgrade path
  —VPPand PGM are “Don’t Care” during normal read operation
■ Manufacturers identification code
■ Fast programming
■ JEDEC standard pin configurations
  —32-pin PDIP package
  —32-pin PLCC package
  —32-pin CERDIP package

Part Name(s) : 27C010 NM27C010 NM27C010N120 NM27C010N150 NM27C010N70 NM27C010N90 NM27C010NE120 NM27C010NE150 NM27C010NE70 NM27C010NE90 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) High Performance CMOS EPROM View

General Description
The NM27C010 is a High Performance, 1,048,576-Bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with no printed circuit board changes.
The NM27C010 can directly replace lower density 28-pin EPROMs by adding an A16 address line and VCC jumper. During the normal read operation PGM and VPP are in a “Don’t Care” state which allows Higher order addresses, such as A17, A18, and A19 to be connected without affecting the normal read operation. This allows memory upgrades to 8M bits without hardware changes. The NM27C010 is also offered in a 32-pin plastic DIP with the same upgrade path.

Features
High Performance CMOS
   —70 ns access time
■ Fast turn-off for microprocessor compatibility
■ Simplified upgrade path
   —VPP and PGM are “Don’t Care” during normal read operation
■ Manufacturers identification code
■ Fast programming
■ JEDEC standard pin configurations
   —32-pin PDIP package
   —32-pin PLCC package
   —32-pin CERDIP package

Part Name(s) : NM27C210 NM27C210N120 NM27C210N150 NM27C210N90 NM27C210Q120 NM27C210Q150 NM27C210Q90 NM27C210V120 NM27C210V150 NM27C210V90 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (64K x 16) High Performance CMOS EPROM View

General Description
The NM27C210 is a High Performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for prototyping and early production applications as well as nonerasable, plastic packaged versions that are ideal for High volume and automated assembly applications.

Features
High Performance CMOS
    — 90 ns access time
■ Fast turn-off for microprocessor compatibility
■ Simplified upgrade path
    —VPP and PGM are “Don’t Care” during normal read operation
■ Compatible with 27210 and 27C210 EPROMs
■ Manufacturer’s identification code
■ Fast programming
■ JEDEC standard pin configuration
    — 40-pin CDIP package
    — 40-pin PDIP package
    — 44-pin PLCC package


Part Name(s) : NM27LV010Q250 NM27LV010T300 NM27LV010TE385 NM27LV010VE150 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) Low Voltage EPROM View

General Description
The NM27LV010 is a High Performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns.
This Low Voltage and Low Power EPROM is designed with power sensitive hand held and portable battery products in mind. This allows for code storage of firmware for applications like notebook computers, palm top computers, cellular phones, and HDD.

Features
■ 3.0V to 3.6V operation
■ 200 ns access time
■ Low current operation
    — 8 mA ICC active current @ 5 MHz (typ.)
    — 20µA ICC standby current @ 5 MHz (typ.)
■ Ultra low power operation
    — 66 µW standby power @ 3.3V
    — 50 mW active power @ 3.3V
■ Surface mount package options|
    — 32-pin TSOP
    — 32-pin PLCC

Part Name(s) : NM27LV010B NM27LV010BT200 NM27LV010BT250 NM27LV010BTE250 NM27LV010BTXXX NM27LV010BTE200 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) Low Voltage EPROM View

General Description
The NM27LV010B is a High Performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s split gate AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 250 ns over industrial temperatures (-40°C to +85°C).

Features
■ 2.7V to 3.3V operation
■ 200 ns access time
■ Low current operation
    — 8 mA ICC Active Current @ 5 MHz (Typ)
    — 15µA ICC Standby Current @ 5 MHz (Typ)
■ Ultra low power operation
    — 50 µW Standby Power @ 3.3V (Typ)
    — 27 mW Active Power @ 3.3V (Typ)
■ 32-pin TSOP Package

Part Name(s) : NM27LV010BVXXX NM27LV010BC250 NM27LV010BC300 NM27LV010BV250 NM27LV010BV300 NM27LV010BT300 NM27LV010BCE250 NM27LV010BCE300 NM27LV010BVE250 NM27LV010BVE300 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) Low Voltage EPROM View

General Description
The NM27LV010B is a High Performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s latest 0.8µ CMOS split gate AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 250 ns over industrial temperatures (−40˚C to +85˚C).

Features
■ 2.7V to 3.6V operation
■ 250 ns access time
■ Low current operation
    — 8 mA ICC Active Current @ 5 MHz (Typ)
    — 15 µA ICC Standby Current @ 5 MHz (Typ)
■ Ultra low power operation
    — 50 µW Standby Power @ 3.3V (Typ)
    — 27 mW Active Power @ 3.3V (Typ)
■ Surface mount package options
    — 32-pin TSOP
    — 32-pin PLCC

Part Name(s) : NM27LV010 NM27LV010V200 NM27LV010V250 NM27LV010T200 NM27LV010T250 NM27LV010VE200 NM27LV010VE250 NM27LV010TE200 NM27LV010TE250 Fairchild
Fairchild Semiconductor
Description : 1,048,576-Bit (128K x 8) Low Voltage EPROM View

General Description
The NM27LV010 is a High Performance Low Voltage Electrically Programmable Read Only Memory. It is manufactured using Fairchild’s AMG™ EPROM technology. This technology allows the part to operate at speeds as fast as 200 ns.

Features
■ 3.0V to 3.6V operation
■ 200 ns access time
■ Low current operation
    — 8 mA ICC active current @ 5 MHz (typ.)
    — 20µA ICC standby current @ 5 MHz (typ.)
■ Ultra low power operation
    — 66 µW standby power @ 3.3V
    — 50 mW active power @ 3.3V
■ Surface mount package options|
    — 32-pin TSOP
    — 32-pin PLCC

Part Name(s) : HT27C010 Holtek
Holtek Semiconductor
Description : OTP CMOS 128Kx8-bit EPROM View

General Description

The HT27C010 chip family is a low-power, 1024K (1,048,576) bit, +5V electrically one-time programmable (OTP) read-only memories (EPROM). Organized into 128K words with 8 bits per word, it features a fast single address location programming, typically at 75µs per byte. Any byte can be accessed in less than 70ns/90ns/120ns with respect to Spec. Thiseliminates the need for WAIT states in High Performance microprocessor systems.


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