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Description : 1024-Bit Serial CMOS EEPROM (MICROWIRESynchronous Bus)

General Description
NM93C46 is a 1024-Bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standard Microcontrollers and Microprocessors. There are 7 instructions implemented on the NM93C46 for various Read, Write, Erase, and Write Enable/Disable operations. This device is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption.
“LZ” and “L” versions of NM93C46 offer very low standby current making them suitable for low power applications. This device is offered in both SO and TSSOP packages for small space consid erations.

Features
■ Wide VCC 2.7V - 5.5V
■ Typical active current of 200µA
   10µA standby current typical
   1µA standby current typical (L)
   0.1µA standby current typical (LZ)
■ No Erase instruction required before Write instruction
■ Self timed write cycle
■ Device status during programming cycles
■ 40 year data retention
■ Endurance: 1,000,000 data changes
■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP

Description : 4K-Bit Serial CMOS EEPROM(MICROWIRESynchronous Bus)

General Description

FM93C66A is a 4096-bit CMOS non-volatile EEPROM organized as 256 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compat ible to many of standard Microcontrollers and Microprocessors.



Features

■ Wide VCC2.7V - 5.5V

■ User selectable organization

    x16 (ORG = 1)

    x8 (ORG = 0)

■ Typical active current of 200µA

    10µA standby current typical

    1µA standby current typical (L)

    0.1µA standby current typical (LZ)

■ No Erase instruction required before Write instruction

■ Self timed write cycle

■ Device status during programming cycles

■ 40 year data retention

■ Endurance: 1,000,000 data changes

■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP


Description : 256-Bit Serial CMOS EEPROM (MICROWIRESynchronous Bus)

General Description
NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as 16 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.
   
Features
■ Wide VCC 2.7V - 5.5V
■ Typical active current of 200µA
    10µA standby current typical
    1µA standby current typical (L)
    0.1µA standby current typical (LZ)
■ No Erase instruction required before Write instruction
■ Self timed write cycle
■ Device status during programming cycles
■ 40 year data retention
■ Endurance: 1,000,000 data changes
■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
   

Description : (MICROWIREBus Interface) 1024-Bit Serial EEPROM with Data Protect and Sequential Read

General Description

FM93CS46 is a 1024-Bit CMOS non-volatile EEPROM organized as 64 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.



Features

■Wide VCC2.7V - 5.5V

■Programmable write protection

■Sequential register read

■Typical active current of 200µA

  10µA standby current typical

  1µA standby current typical (L)

  0.1µA standby current typical (LZ)

■No Erase instruction required before Write instruction

■Self timed write cycle

■Device status during programming cycles

■40 year data retention

■Endurance: 1,000,000 data changes

■Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP


Description : 16K-Bit Serial CMOS EEPROM (MICROWIRESynchronous Bus)

General Description

FM93C86A is a 16,384-bit CMOS non-volatile EEPROM organized as 1024 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors. This device offers a pin (ORG), using which, the user can select the format of the data (16-bit or 8-bit). If ORG is tied to GND, then 8-bit format is selected, while if ORG is tied to VCC, then 16-bit format is selected. There are 7 instructions implemented on the FM93C86A for various Read, Write, Erase, and Write Enable/Disable operations. This device is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power consumption



Features

■ Wide VCC 2.7V - 5.5V

■ User selectable organization

   x16 (ORG = 1)

   x8 (ORG = 0)

■ Typical active current of 200µA

   10µA standby current typical

   1µA standby current typical (L)

   0.1µA standby current typical (LZ)

■ No Erase instruction required before Write instruction

■ Self timed write cycle

■ Device status during programming cycles

■ 40 year data retention

■ Endurance: 1,000,000 data changes

■ Packages available: 8-pin SO and 8-pin DIP



 


Description : 8/16 Kbit (1024/2048 × 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode™

Features
• Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages × 16 bytes
• Page protection mode, flexible page-by-page hardware write protection
    – Additional protection EEPROM of 64/128 bits, 1 bit per data page
    – Protection setting for each data page by writing its protection bit
    – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire Serial interface Bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
    – Internal programming voltage
    – Self timed programming cycle including erase
    – Byte-write and page-write programming, between 1 and 16 bytes
    – Typical programming time 5 ms for up to 16 bytes
• High reliability
    – Endurance 106 cycles1)
    – Data retention 40 years1)
    – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
    – Industrial: − 40 °C to + 85 °C
    – Automotive: − 40°C to + 125 °C

Description : 8/16 Kbit (1024/2048 × 8 bit) Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus and Page Protection Mode™

Features
• Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages × 16 bytes
• Page protection mode, flexible page-by-page hardware write protection
    – Additional protection EEPROM of 64/128 bits, 1 bit per data page
    – Protection setting for each data page by writing its protection bit
    – Protection management without switching WP pin
• Low power CMOS
• VCC = 2.7 to 5.5 V operation
• Two wire Serial interface Bus, I2C-Bus compatible
• Filtered inputs for noise suppression with Schmitt trigger
• Clock frequency up to 400 kHz
• High programming flexibility
    – Internal programming voltage
    – Self timed programming cycle including erase
    – Byte-write and page-write programming, between 1 and 16 bytes
    – Typical programming time 5 ms for up to 16 bytes
• High reliability
    – Endurance 106 cycles1)
    – Data retention 40 years1)
    – ESD protection 4000 V on all pins
• 8 pin DIP/DSO packages
• Available for extended temperature ranges
    – Industrial: − 40 °C to + 85 °C
    – Automotive: − 40°C to + 125 °C

Part Name(s) : INA2586
Integral
Integral Corp.
Description : 1024 x 8-Bit n-MOS EEPROM with I2C-Bus Interface

The INA2586 is a 8-Kbit (1024 x 8-bit) n-MOS floating gate electrically erasable programmable read only memory (EEPROM). IC works in systems with Serial I2C-Bus. Up to two INA2586 devices may be connected to the I2C-Bus.The programming of the array is implemented by electron’s tunneling. The programming voltage is generated on-chip, using a voltage multiplier. Device is functionally identical to the SDA2586, Siemens. IC are made in 8-pin DIP and 8-pin SOP.

FEATURES
♦ Non-volatile storage of information during 10 years
♦ Single supply (Ucc=4,75 B - 5,25 B)
♦ On-chip voltage multiplier
♦ On-chip generator of bulk biasing
Serial input/output I2C-Bus
♦ 10 000 ERASE/WRITE cycles per byte;
♦ Internal reprogramming (no external components)
♦ Duration of the ERASE/WRITE cycle is 15 ms
♦ Temperature range: 0 ÷ +70°C

Description : (MICROWIRE Bus Interface) 4096-Bit Serial EEPROM with Data Protect and Sequential Read

General Description
NM93CS66 is a 4096-bit CMOS non-volatile EEPROM organized as 256 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.

Features
■ Wide VCC 2.7V - 5.5V
■ Programmable write protection
■ Sequential register read
■ Typical active current of 200µA
    10µA standby current typical
    1µA standby current typical (L)
    0.1µA standby current typical (LZ)
■ No Erase instruction required before Write instruction
■ Self timed write cycle
■ Device status during programming cycles
■ 40 year data retention
■ Endurance: 1,000,000 data changes
■ Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP

Description : 16K-Bit Serial CMOS EEPROM (MICROWIRESynchronous Bus)

General Description

NM93C86A is a 16,384-bit CMOS non-volatile EEPROM organized as 1024 x 16-bit array. This device features MICROWIRE interface which is a 4-wire Serial Bus with chipselect (CS), clock (SK), data input (DI) and data output (DO) signals. This interface is compatible to many of standard Microcontrollers and Microprocessors.



Features

■Wide VCC 2.7V - 5.5V

■User selectable organization

x16 (ORG = 1)

x8 (ORG = 0)

■Typical active current of 200µA

10µA standby current typical

1µA standby current typical (L)

0.1µA standby current typical (LZ)

■No Erase instruction required before Write instruction

■Self timed write cycle

■Device status during programming cycles

■40 year data retention

■Endurance: 1,000,000 data changes

■Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP


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