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Part Name(s) : GS72116J GS72116T GS72116TP GS72116U GS72116TP-8 GS72116TP-8I GS72116TP-12 GS72116TP-12I GS72116TP-10 GS72116TP-10I GSI
Giga Semiconductor
Description : 128K x 16 2Mb Asynchronous SRAM View

128K x 16 2Mb Asynchronous SRAM

Part Name(s) : GS73024B GS73024B-10 GS73024B-10I GS73024B-12 GS73024B-12I GS73024B-15 GS73024B-15I GSI
Giga Semiconductor
Description : 128K x 24 3Mb Asynchronous SRAM View

128K X 24 3MB Asynchronous SRAM

Part Name(s) : GS71216TP GS71216TP-10 GS71216TP-10I GS71216TP-8 GS71216TP-8I GSI
Giga Semiconductor
Description : 64K x 16 1Mb Asynchronous SRAM View

64K x 16 1Mb Asynchronous SRAM

Part Name(s) : UT62L12916 UT62L12916BS UT62L12916I UT62L12916BS-70L UT62L12916BS-70LL UT62L12916BS-100L UT62L12916BS-100LL UT62L12916BS-70LI UT62L12916BS-70LLI UT62L12916BS-100LI ETC
Unspecified
Description : 128K X 16 BIT LOW POWER CMOS SRAM View

[UTRON]

128K X 16 BIT LOW POWER CMOS SRAM


Part Name(s) : UT62S12916 UT62S12916-100 UT62S12916-70 UT62S12916BS-100L UT62S12916BS-100LI UT62S12916BS-100LL UT62S12916BS-100LLI UT62S12916BS-70L UT62S12916BS-70LI UT62S12916BS-70LL Utron
Utron Technology Inc
Description : 128K x 16 BIT LOW-POWER CMOS SRAM View

128K x 16 BIT LOW-POWER CMOS SRAM

Part Name(s) : M48Z2M1 M48Z2M1-70PL1 M48Z2M1-70PL9 M48Z2M1YPL M48Z2M1PL ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x 8) ZEROPOWER® SRAM View

SUMMARY DESCRIPTION
The M48Z2M1/Y ZEROPOWER® RAM is a nonvolatile 16,777,216-bit, Static RAM organized as 2,097,152 words by 8 bits. The device combines two internal lithium batteries, CMOS SRAMs and a control circuit in a plastic 36-pin DIP, long Module.
   
FEATURES SUMMARY
■ INTEGRATED, ULTRA LOW POWER SRAM,
    POWER-FAIL CONTROL CIRCUIT, and
    BATTERIES
■ CONVENTIONAL SRAM OPERATION;
    UNLIMITED WRITE CYCLES
■ 10 YEARS OF DATA RETENTION IN THE
    ABSENCE OF POWER
■ AUTOMATIC POWER-FAIL CHIP DESELECT
    and WRITE PROTECTION
■ WRITE PROTECT VOLTAGES
    (VPFD = Power-fail Deselect Voltage):
    – M48Z2M1: 4.5V ≤ VPFD ≤ 4.75V
    – M48Z2M1Y: 4.2V ≤ VPFD ≤ 4.5V
■ BATTERIES ARE INTERNALLY ISOLATED
    UNTIL POWER IS APPLIED
■ PIN and FUNCTION COMPATIBLE WITH
    JEDEC STANDARD 2Mb x 8 SRAMs
   

Part Name(s) : HMN12816D HMN12816D-120 HMN12816D-120I HMN12816D-150 HMN12816D-150I HMN12816D-70 HMN12816D-70I HMN12816D-85 HMN12816D-85I ETC
Unspecified
Description : Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V View

GENERAL DESCRIPTION

The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as 131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.



FEATURES

Access time : 70, 85, 120, 150ns

High-density design : 256KByte Design

Battery internally isolated until power is applied

Industry-standard 40-pin 128K x 16 pinout

Unlimited write cycles

Data retention in the absence of VCC

10-years minimum data retention in absence of power

Automatic write-protection during power-up/power-down cycles

Data is automatically protected during power loss

Conventional SRAM operation; unlimited write cycles


Part Name(s) : HMN12816D HMN12816D-120 HMN12816D-120I HMN12816D-150 HMN12816D-150I HMN12816D-70 HMN12816D-70I HMN12816D-85 HMN12816D-85I HANBIT
Hanbit Electronics Co.,Ltd
Description : Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V View

GENERAL DESCRIPTION

The HMN12816D 128K x 16 nonvolatile SRAM’s are 2,097,152-bit fully static, nonvolatile SRAM’s, organized as

131,072 words by 16 bits. Each NVSRAM has a self contained lithium energy source and control circuitry which

constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package HMN12816D devices can be used in place of solutions which build nonvolatile 128Kx16 memory by utilizing a variety of discrete components. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.



FEATURES

Access time : 70, 85, 120, 150ns

High-density design : 256KByte Design

Battery internally isolated until power is applied

Industry-standard 40-pin 128K x 16 pinout

Unlimited write cycles

Data retention in the absence of VCC

10-years minimum data retention in absence of power

Automatic write-protection during power-up/power-down cycles

Data is automatically protected during power loss

Conventional SRAM operation; unlimited write cycles


Part Name(s) : UT62S12816 UT62S12816BS-100L UT62S12816BS-100LI UT62S12816BS-100LL UT62S12816BS-100LLI UT62S12816I UT62S12816MC-100L UT62S12816MC-100LI UT62S12816MC-100LL UT62S12816MC-100LLI Utron
Utron Technology Inc
Description : 128K x 16 BIT LOW-POWER CMOS SRAM View

128K x 16 BIT LOW-POWER CMOS SRAM

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