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Part name(s)' : IRF130
Description : 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET
Intersil
Intersil

This N-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
14A, 100V
• rDS(ON) = 0.160
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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Part name(s)' : IRF530
Description : 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs
NJSEMI
New Jersey Semiconductor

These are N-Channel enhancement mode silicon gate Power field effect transistors. They are advanced Power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
14A, 100V
• rDS(ON)= 0.160 Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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Part name(s)' : BUZ72A
Description : 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET
Intersil
Intersil

9A, 100V, 0.250 Ohm, N-Channel Power MOSFET



This is an N-Channel enhancement mode silicon gate Power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. This type can be operated directly from integrated circuits.



Features

• 9A, 100V

• rDS(ON) = 0.250Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

  -TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”



 


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Part name(s)' : IRF510
Description : 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET
Intersil
Intersil

5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.



Features

• 5.6A, 100V

•rDS(ON)= 0.540Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


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Part name(s)' : 14N06L FP14N06L RFD14N06L RFD14N06LSM RFP14N06L
Description : 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
Intersil

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs



These are N-Channel Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.



Features

14A, 60V

• rDS(ON)= 0.100Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

   Components to PC Boards”


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Part name(s)' : IRFP450
Description : 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
Intersil
Intersil

This N-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.

Features
14A, 500V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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Part name(s)' : IRF646
Description : 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
Intersil
Intersil

This N-Channel enhancement mode silicon gate Power field effect transistor is an advanced Power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the reakdown avalanche mode of operation. All of these Power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits.



Features

14A, 275V

• rDS(ON)= 0.280Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 275VDC Rating-120VAC Line System Operation

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


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Part name(s)' : IRFP9150
Description : 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
Intersil
Intersil

This advanced Power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate Power field effect transistor designed for applications such as switching regulators,

switching convertors, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. These types can be operated directly from integrated circuits. The P-Channel IRFP9150 is an approximate electrical complement to the N-Channel IRFP150.



Features

• 25A, 100V

•rDS(ON)= 0.150Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance


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Part name(s)' : BUZ71
Description : 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET
Intersil
Intersil

This is an N-Channel enhancement mode silicon gate Power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power. This type can be operated directly from integrated circuits.

Features
14A, 50V
• rDS(ON) = 0.100Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

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