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Part Name(s) : G7N60B3D HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A HGTP7N60B3D9A Intersil
Intersil
Description : 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode View

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150oC at rated current. The IGBT is developmental type TA49190. The Diode used in Anti-Parallel with the IGBT is the RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features
14A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode

Part Name(s) : G7N60B3D HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A HGTP7N60B3D9A Fairchild
Fairchild Semiconductor
Description : 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode View

The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150oC at rated current. The IGBT is developmental type TA49190. The Diode used in Anti-Parallel with the IGBT is the RHRD660 (TA49057).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features
14A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode

Part Name(s) : HGT4E30N60B3DS HGTG30N60B3D G30N60B3D G30N60B3D HGTG30N60B3D HGTG30N60B3D.. Fairchild
Fairchild Semiconductor
Description : 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode View

60A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features
• 60A, 600V, TC= 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode

Part Name(s) : 12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGTP12N60B3D HGTP12N60B3D9A HGTG12N60B3D9A HGT1S12N60B3DS9A Intersil
Intersil
Description : 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode View

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The Diode used in Anti-Parallel with the IGBT is the development type TA49188.

Features
• 27A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards


Part Name(s) : 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTG12N60B3D9A HGTP12N60B3D HGTP12N60B3D9A Fairchild
Fairchild Semiconductor
Description : 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode View

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49171. The Diode used in Anti-Parallel with the IGBT is the development type TA49188.

Features
• 27A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards

Part Name(s) : G7N60C3D HGT1S7N60C3D HGT1S7N60C3D9A HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D HGTP7N60C3D9A Fairchild
Fairchild Semiconductor
Description : 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes View

General Description

The HGTP7N60C3D, HGT1S7N60C3DS and HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is developmental type TA49115. The Diode used in Anti-Parallel with the IGBT is developmental type TA49057.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.



Features

14A, 600V at TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time...................140ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

Hyperfast Anti-Parallel Diode



 


Part Name(s) : HGTG30N60B3D G30N60B3D Intersil
Intersil
Description : 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode View

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The Diode used in Anti-Parallel with the IGBT is the development type TA49053.

Features
• 60A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
Hyperfast Anti-Parallel Diode

Part Name(s) : G20N60C3D HGTG20N60C3D Intersil
Intersil
Description : 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode View

The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The Diode used in Anti-Parallel with the IGBT is the RHRP3060 (TA49063).



Features

• 45A, 600V, TC= 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . .  108ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Hyperfast Anti-Parallel Diode


Part Name(s) : G20N60B3D HGTG20N60B3D Fairchild
Fairchild Semiconductor
Description : 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode View

The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25℃ and 150℃. The Diode used in Anti-Parallel with the IGBT is the RHRP3060.

Features
• 40A, 600V at TC = 25℃
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150℃
• Short Circuit Rated
• Low Conduction Loss
Hyperfast Anti-Parallel Diode

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