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Part Name(s) : MC-454AD644-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727 NEC
NEC => Renesas Technology
Description : 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description
The MC-4532DA727 is an 33,554,432 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK.
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and Full Page)
• ProgRAMmable wrap sequence (Sequential / Interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ±0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
REGISTERED TYPE
• Serial PD

Part Name(s) : MC-454AC724 MC-454AC724F-A10 MC-454AC724F-A12 MC-454AC724F-A67 MC-454AC724-A10 MC-454AC724-A67 MC-454AC724-A12 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-4516DA726F MC-4516DA726F-A10 MC-4516DA726F-A80 MC-4516DA726LF MC-4516DA726LF-A10 MC-4516DA726LF-A80 NEC
NEC => Renesas Technology
Description : 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description

The MC-4516DA726 is a 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 64M SDRAM: µPD4564441 are assembled.

This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

16,777,216 words BY 72 bits organization (ECC TYPE)

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and Full Page)

• ProgRAMmable wrap sequence (Sequential / Interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ±0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination BY Burst Stop command and Precharge command

168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

REGISTERED TYPE

• Serial PD

• PC100 REGISTERED DIMM Rev. 1.0 compliant



 



Part Name(s) : MC-4532DA727 MC-4532DA727EF-A75 MC-4532DA727PF-A75 MC-4532DA727XF-A75 MC-4532DA727XFA-A75 Elpida
Elpida Memory, Inc
Description : 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description
The MC-4532DA727 is a 33,554,432 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 128M SDRAM: µPD45128441 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and Full Page)
• ProgRAMmable wrap sequence (Sequential / Interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ±0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
REGISTERED TYPE
• Serial PD

Part Name(s) : MC-4516DA726 MC-4516DA726E MC-4516DA726EFC-A10 MC-4516DA726EFC-A80 MC-4516DA726P MC-4516DA726PFC-A10 MC-4516DA726PFC-A80 MC-4516DA726X MC-4516DA726XFC-A10 MC-4516DA726XFC-A80 Elpida
Elpida Memory, Inc
Description : 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description

The MC-4516DA726 is a 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

These MODULEs provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

16,777,216 words BY 72 bits organization (ECC TYPE)

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and Full Page)

• ProgRAMmable wrap sequence (Sequential / Interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles / 64 ms

• Burst termination BY Burst Stop command and Precharge command

168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

REGISTERED TYPE

• Serial PD



 


Part Name(s) : MC-4516CA727EF-A75 MC-4516CA727PF-A75 MC-4516CA727 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA727EF and MC-4516CA727PF are 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
• Unbuffered TYPE
• Serial PD

Part Name(s) : MC-45D32DA721 MC-45D32DA721KF-C75 MC-45D32DA721KF-C80 MC-45D32DA721KFA-C75 MC-45D32DA721KFA-C80 Elpida
Elpida Memory, Inc
Description : 32 M-WORD BY 72-BIT DDR SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description
The MC-45D32DA721 is a 33,554,432 words BY 72 bits DDR SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 128M DDR SDRAM: µPD45D128442 are assembled.
These MODULEs provide high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
   
Features
• 33,554,432 words BY 72 bits organization (ECC TYPE)
• Clock frequency   
• Fully SYNCHRONOUS DYNAMIC RAM with all signals except DM, DQS
    and DQ referenced to a positive clock edge
• Double Data Rate interface
    Differential CLK (/CLK) input
    Data inputs and DM are synchronized with both edges of DQS
    Data outputs and DQS are synchronized with a cross point of CLK and /CLK
• Quad internal banks operation
• Possible to assert random column address in every clock cycle
• ProgRAMmable Mode register set
    /CAS latency (2, 2.5)
    Burst length (2, 4, 8)
    Wrap sequence (Sequential / Interleave)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• 2.5 V ± 0.2 V Power supply for VDD
• 2.5 V ± 0.2 V Power supply for VDDQ
• SSTL_2 compatible with all signals
• 4,096 refresh cycles / 64 ms
• Burst termination BY Precharge command and Burst stop command
• 184-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
REGISTERED TYPE
• Serial PD
       

Part Name(s) : MC-4516CA727 MC-4516CA727EF-A75 MC-4516CA727PF-A75 MC-4516CA727XF-A75 Elpida
Elpida Memory, Inc
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA727EF, MC-4516CA727PF and MC-4516CA727XF are 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
• Unbuffered TYPE
• Serial PD

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