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Description : 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple Memory Product which combines two Memory devices; a

16 Mbit Boot Block Flash Memory and a 2 Mbit SRAM. Recommended operating conditions do not allow both the Flash Memory and the SRAM Memory to be active at the same time. The Memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).



FEATURES SUMMARY

■MULTIPLE Memory PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 2 Mbit (128Kb x 16) SRAM

Supply VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ACCESS TIME: 70ns, 85ns

■LOW POWER CONSUMPTION

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh


Description : 16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

SUMMARY DESCRIPTION
The M36W416TG is a low voltage Multiple Memory Product which combines two Memory devices; a 16 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash Memory and the SRAM Memory to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 16 Mbit (1Mb x 16) Boot Block Flash Memory
    – 4 Mbit (256Kb x 16) SRAM
Supply VOLTAGE
    – VDDF = VDDS = 2.7V to 3.3V
    – VDDQF = VDDS = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W416TG: 88CEh
    – Bottom Device Code, M36W416BG: 88CFh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
    – 64 bit Security Code
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter Block permanently lockable

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION

The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) Supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.



FEATURES SUMMARY

Supply VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

■ ACCESS TIMES: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 Memory BlockS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY Block UNPROTECTION MODE

■ COMMON Flash INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per Block

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160ET: 22C4h

– Bottom Device Code M29W160EB: 2249h


Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

SUMMARY DESCRIPTION
The M36W432 is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70,85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432T: 88BAh
    – Bottom Device Code, M36W432B: 88BBh

Flash Memory
■ 32 Mbit (2Mb x16) Boot Block
    – 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ COMMON Flash INTERFACE
    – 64 bit Security Code
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter Block permanently lockable

SRAM
■ 4 Mbit (256K x 16 bit)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

Flash Memory
■ 32 Mbit (2Mb x16) Boot Block
    – 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

SUMMARY DESCRIPTION

The M29W160D is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) Supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.



FEATURES SUMMARY

■ SINGLE 2.7 to 3.6V Supply VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 70ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 Memory BlockS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY Block UNPROTECTION MODE

■ SECURITY Memory Block

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per Block

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h


Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory

SUMMARY DESCRIPTION
The M29F160B is a 16Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V Supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10% Supply VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 8µs per Byte/Word typical
■ 35 Memory BlockS
    – 1 Boot Block (Top or Bottom Location)
    – 2 Parameter and 32 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/Word Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY Block UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29F160BT: 22CCh
    – Bottom Device Code M29F160BB: 224Bh

Description : 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

Summary description
The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash Memory that can be read, erased at Block, multi-Block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC Supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

FEATURES SUMMARY
■ ACCESS TIMES: 70ns, 90ns
■ PROGRAMMING TIME: 10µs per Byte typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Embedded Byte Program Algorithm
    – Status Register bits and Ready/Busy Output
■ 19 Memory BlockS
    – 1 Boot Block (Top or Bottom location)
    – 2 Parameter and 16 Main Blocks
Block, MULTI-Block and CHIP ERASE
■ MULTIPLE Block PROTECTION/ TEMPORARY UNPROTECTION MODE
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby modes
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – M29W008ET Device Code: D2h
    – M29W008EB Device Code: DCh
■ ECOPACK® TSOP40 PACKAGE

Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

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