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Part Name(s) : M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T M36W216BIZA M36W216T M36W216TI M36W216TI-ZAT M36W216TI70ZA1T M36W216TI85ZA1T ST-Microelectronics
STMicroelectronics
Description : 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product View

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple Memory Product which combines two Memory devices; a

16 Mbit Boot Block Flash Memory and a 2 Mbit SRAM. Recommended operating conditions do not allow both the Flash Memory and the SRAM Memory to be active at the same time. The Memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).



FEATURES SUMMARY

■MULTIPLE Memory PRODUCT

16 Mbit (1Mb x 16) Boot Block Flash Memory

– 2 Mbit (128Kb x 16) SRAM

Supply VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ACCESS TIME: 70ns, 85ns

■LOW POWER CONSUMPTION

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh


Part Name(s) : M29W160EB M29W160EB79N6 M29W160EB79N6E M29W160EB79N6F M29W160EB79N6T M29W160EB79ZA6 M29W160EB79ZA6E M29W160EB79ZA6F M29W160EB79ZA6T M29W160EB90N6 ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory View

SUMMARY DESCRIPTION

The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) Supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.



FEATURES SUMMARY

Supply VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

■ ACCESS TIMES: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 Memory BlockS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ TEMPORARY Block UNPROTECTION MODE

■ COMMON Flash INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per Block

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160ET: 22C4h

– Bottom Device Code M29W160EB: 2249h


Part Name(s) : M36W832BE M36W832BE-ZAT M36W832BE70ZA1S M36W832BE70ZA1T M36W832BE70ZA6S M36W832BE70ZA6T M36W832BE85ZA1S M36W832BE85ZA1T M36W832BE85ZA6S M36W832BE85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

Flash Memory
■ 32 Mbit (2Mb x16) Boot Block
    – 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M29W008EB M29W008ET M29W00EB M29W008EB70N1E M29W008EB70N1F M29W008EB70N6E M29W008EB70N6F M29W008EB90N1E M29W008EB90N1F M29W008EB90N6E ST-Microelectronics
STMicroelectronics
Description : 8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory View

Summary description
The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash Memory that can be read, erased at Block, multi-Block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC Supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

FEATURES SUMMARY
■ ACCESS TIMES: 70ns, 90ns
■ PROGRAMMING TIME: 10µs per Byte typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Embedded Byte Program Algorithm
    – Status Register bits and Ready/Busy Output
■ 19 Memory BlockS
    – 1 Boot Block (Top or Bottom location)
    – 2 Parameter and 16 Main Blocks
Block, MULTI-Block and CHIP ERASE
■ MULTIPLE Block PROTECTION/ TEMPORARY UNPROTECTION MODE
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby modes
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – M29W008ET Device Code: D2h
    – M29W008EB Device Code: DCh
■ ECOPACK® TSOP40 PACKAGE


Part Name(s) : M36W432BG M36W432BGZA M36W432TGZA M36W432BG-ZA M36W432BG-ZAT M36W432BG70ZA1 M36W432BG70ZA1T M36W432BG70ZA6 M36W432BG70ZA6T M36W432BG85ZA1 STMICROELECTRONICS
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M36W432BG M36W432BG-ZA M36W432BG-ZAT M36W432BGZA M36W432BGZAT M36W432TG M36W432TG-ZA M36W432TG-ZAT M36W432TGZA M36W432TGZAT ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
Supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : AB28F400BX-T90 AB28F400BX-B90 Intel
Intel
Description : 4-Mbit (256K x16, 512K x8) Boot Block Flash Memory FAMILY View

Intel’s 4-Mbit Flash Memory Family is an extension of the Boot Block Architecture which includes Block selective erasure, automated write and erase operations and standard microprocessor interface. The 4-Mbit Flash Memory Family enhances the Boot Block Architecture by adding more density and Blocks, x8/x16 input/ output control, very high speed, low power, an industry standard ROM compatible pinout and surface mount packaging. The 4-Mbit Flash family is an easy upgrade from Intel’s 2-Mbit Boot Block Flash Memory Family.

■ x8/x16 Input/Output Architecture
    — A28F400BX-T, A28F400BX-B
    — For High Performance and High Integration 16-bit and 32-bit CPUs
■ Optimized High Density Blocked Architecture
    — One 16 KB Protected Boot Block
    — Two 8 KB Parameter Blocks
    — One 96 KB Main Block
    — Three 128 KB Main Blocks
    — Top or Bottom Boot Locations
■ Extended Cycling Capability
    — 1,000 Block Erase Cycles
■ Automated Word/Byte Write and Block Erase
    — Command User Interface
    — Status Register
    — Erase Suspend Capability
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
    — 1 mA Typical ICC Active Current in Static Operation
■ Very High-Performance Read
    — 90 ns Maximum Access Time
    — 45 ns Maximum Output Enable Time
■ Low Power Consumption
    — 25 mA Typical Active Read Current
■ Deep Power-Down/Reset Input
    — Acts as Reset for Boot Operations
■ Automotive Temperature Operation
    — b40§C to a125§C
■ Write Protection for Boot Block
■ Hardware Data Protection Feature
    — Erase/Write Lockout During Power Transitions
■ Industry Standard Surface Mount Packaging
    — JEDEC ROM Compatible 44-Lead PSOP
■ 12V Word/Byte Write and Block Erase
    — VPP e 12V g5% Standard
■ ETOXTM III Flash Technology
    — 5V Read

Part Name(s) : M29F160BB M29F160BB90N6 M29F160BT M29F160BT90N6 M29F160BT55N1 M29F160BT55N1T M29F160BT55N3 M29F160BT55N3T M29F160BT55N6 M29F160BT55N6T ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) Single Supply Flash Memory View

SUMMARY DESCRIPTION
The M29F160B is a 16Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V Supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 5V±10% Supply VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 55ns
■ PROGRAMMING TIME
    – 8µs per Byte/Word typical
■ 35 Memory BlockS
    – 1 Boot Block (Top or Bottom Location)
    – 2 Parameter and 32 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte/Word Program algorithm
    – Embedded Multi-Block/Chip Erase algorithm
    – Status Register Polling and Toggle Bits
    – Ready/Busy Output Pin
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
    – Faster Production/Batch Programming
■ TEMPORARY Block UNPROTECTION MODE
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Top Device Code M29F160BT: 22CCh
    – Bottom Device Code M29F160BB: 224Bh

Part Name(s) : M36W108AB M36W108ABZM M36W108ABZN M36W108AT M36W108ATZM M36W108ATZN M36W108AT100ZM1T M36W108AT100ZM5T M36W108AT100ZM6T M36W108AT100ZN1T ST-Microelectronics
STMicroelectronics
Description : 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product View

DESCRIPTION
The M36W108A is multi-chip device containing an 8 Mbit Boot Block Flash Memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

Supply VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (Flash chip)
    – Stand-by: 100µA max. (Flash chip)

Flash Memory
■ 8 Mbit (1Mb x 8) Boot Block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION Memory AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
Memory BlockS
    – Boot Block (Top or Bottom location)
    – Parameter and Main Blocks
Block, MULTI-Block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108AT: D2h
    – Device Code, M36W108AB: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

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