Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T M36W216BIZA M36W216T M36W216TI M36W216TI-ZAT M36W216TI70ZA1T M36W216TI85ZA1T ST-Microelectronics
STMicroelectronics
Description : 16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product View

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple Memory Product which combines two Memory devices; a

16 Mbit Boot Block Flash Memory and a 2 Mbit SRAM. Recommended operating conditions do not allow both the Flash Memory and the SRAM Memory to be active at the same time. The Memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).



FEATURES SUMMARY

■MULTIPLE Memory PRODUCT

16 Mbit (1Mb x 16) Boot Block Flash Memory

– 2 Mbit (128Kb x 16) SRAM

■SUPPLY VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ACCESS TIME: 70ns, 85ns

■LOW POWER CONSUMPTION

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh


Part Name(s) : M36W108AB M36W108ABZM M36W108ABZN M36W108AT M36W108ATZM M36W108ATZN M36W108AT100ZM1T M36W108AT100ZM5T M36W108AT100ZM6T M36W108AT100ZN1T ST-Microelectronics
STMicroelectronics
Description : 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product View

DESCRIPTION
The M36W108A is multi-chip device containing an 8 Mbit Boot Block Flash Memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

■ SUPPLY VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (Flash chip)
    – Stand-by: 100µA max. (Flash chip)

Flash Memory
■ 8 Mbit (1Mb x 8) Boot Block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION Memory AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
Memory BlockS
    – Boot Block (Top or Bottom location)
    – Parameter and Main Blocks
Block, MULTI-Block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108AT: D2h
    – Device Code, M36W108AB: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

Part Name(s) : M36W108B M36W108BZM M36W108BZN M36W108T M36W108TZM M36W108TZN M36W108T100ZM1 M36W108T100ZM1T M36W108T100ZM5 M36W108T100ZM5T ST-Microelectronics
STMicroelectronics
Description : 8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product View

DESCRIPTION
The M36W108 is multi-chip device containing an 8 Mbit Boot Block Flash Memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch.

■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
■ SUPPLY VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (Flash chip)
    – Stand-by: 100µA max. (Flash chip)

Flash Memory
■ 8 Mbit (1Mb x 8) Boot Block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
Memory BlockS
    – Boot Block (Top or Bottom location)
    – Parameter and Main Blocks
Block, MULTI-Block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another Block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108T: D2h
    – Device Code, M36W108B: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

Part Name(s) : M36W832BE M36W832BE-ZAT M36W832BE70ZA1S M36W832BE70ZA1T M36W832BE70ZA6S M36W832BE70ZA6T M36W832BE85ZA1S M36W832BE85ZA1T M36W832BE85ZA6S M36W832BE85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

Flash Memory
■ 32 Mbit (2Mb x16) Boot Block
    – 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STandBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS


Part Name(s) : M36W432BG M36W432BG-ZA M36W432BG-ZAT M36W432BGZA M36W432BGZAT M36W432TG M36W432TG-ZA M36W432TG-ZAT M36W432TGZA M36W432TGZAT ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two Memory devices; a 32 Mbit Boot Block Flash Memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE Memory PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

Flash Memory
Memory BlockS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
Block LOCKING
    – All Blocks locked at Power up
    – Any combination of Blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STandBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ COMMON Flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : AB28F400BX-T90 AB28F400BX-B90 Intel
Intel
Description : 4-Mbit (256K x16, 512K x8) Boot Block Flash Memory FAMILY View

Intel’s 4-Mbit Flash Memory Family is an extension of the Boot Block Architecture which includes Block selective erasure, automated write and erase operations and standard microprocessor interface. The 4-Mbit Flash Memory Family enhances the Boot Block Architecture by adding more density and Blocks, x8/x16 input/ output control, very high speed, low power, an industry standard ROM compatible pinout and surface mount packaging. The 4-Mbit Flash family is an easy upgrade from Intel’s 2-Mbit Boot Block Flash Memory Family.

■ x8/x16 Input/Output Architecture
    — A28F400BX-T, A28F400BX-B
    — For High Performance and High Integration 16-bit and 32-bit CPUs
■ Optimized High Density Blocked Architecture
    — One 16 KB Protected Boot Block
    — Two 8 KB Parameter Blocks
    — One 96 KB Main Block
    — Three 128 KB Main Blocks
    — Top or Bottom Boot Locations
■ Extended Cycling Capability
    — 1,000 Block Erase Cycles
■ Automated Word/Byte Write and Block Erase
    — Command User Interface
    — Status Register
    — Erase Suspend Capability
SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
    — 1 mA Typical ICC Active Current in Static Operation
■ Very High-Performance Read
    — 90 ns Maximum Access Time
    — 45 ns Maximum Output Enable Time
■ Low Power Consumption
    — 25 mA Typical Active Read Current
■ Deep Power-Down/Reset Input
    — Acts as Reset for Boot Operations
■ Automotive Temperature Operation
    — b40§C to a125§C
■ Write Protection for Boot Block
■ Hardware Data Protection Feature
    — Erase/Write Lockout During Power Transitions
■ Industry Standard Surface Mount Packaging
    — JEDEC ROM Compatible 44-Lead PSOP
■ 12V Word/Byte Write and Block Erase
    — VPP e 12V g5% Standard
■ ETOXTM III Flash Technology
    — 5V Read

Part Name(s) : M36DR432-ZAT M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR432A120ZA6C M36DR432A120ZA6T M36DR432AZA M36DR432B M36DR432B100ZA6C M36DR432B100ZA6T STMICROELECTRONICS
STMicroelectronics
Description : 32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product View

DESCRIPTION
The M36DR432 is a multichip Memory device containing a 32 Mbit Boot Block Flash Memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = VDDS =1.65V to 2.2V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 100,120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36DR432A: 00A0h
    – Bottom Device Code, M36DR432B: 00A1h

Flash Memory
■ 32 Mbit (2Mb x16) Boot Block
    – Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
■ ASYNCRONOUS PAGE MODE READ
    – Page width: 4 Word
    – Page Mode Access Time: 35ns
■ DUAL BANK OPERATION
    – Read within one Bank while Program or Erase within the other
    – No Delay between Read and Write Operations
Block PROTECTION ON ALL BlockS
    – WPF for Block Locking
■ COMMON Flash INTERFACE
    – 64 bit Security Code

SRAM
■ 4 Mbit (256K x 16 bit)
■ LOW VDDS DATA RETENTION: 1V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M36W0R6040B0 M36W0R6040B0ZAQ M36W0R6040B0ZAQE M36W0R6040B0ZAQF M36W0R6040B0ZAQT M36W0R6040T0 M36W0R6040T0ZAQ M36W0R6040T0ZAQE M36W0R6040T0ZAQF M36W0R6040T0ZAQT ST-Microelectronics
STMicroelectronics
Description : 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package View

SUMMARY DESCRIPTION

The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two Memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one Memory to be active at the same time. The Memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package.

In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECO PACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.

All packages are compliant with Lead-free soldering processes.



FEATURES SUMMARY

■ MULTI-CHIP PACKAGE

   – 1 die of 64 Mbit (4Mb x 16) Flash Memory

   – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM

■ SUPPLY VOLTAGE

   – VDDF = VDDP = VDDQ = 1.7V to 1.95V

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

   – Manufacturer Code: 20h

   – Device Code (Top Flash Configuration), M36W0R6040T0: 8810h

   – Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h

■ PACKAGES

   – Compliant with Lead-Free Soldering Processes

   – Lead-Free Versions



Flash Memory

■ PROGRAMMING TIME

   – 8µs by Word typical for Fast Factory Program

   – Double/Quadruple Word Program option

   – Enhanced Factory Program options

Memory BlockS

   – Multiple Bank Memory Array: 4 Mbit Banks

   – Parameter Blocks (Top location)

■ SYNCHRONOUS / ASYNCHRONOUS READ

   – Synchronous Burst Read mode: 66MHz

   – Asynchronous/ Synchronous Page Read mode

   – Random Access: 70ns

■ DUAL OPERATIONS

   – Program Erase in one Bank while Read in others

   – No delay between Read and Write operations

Block LOCKING

   – All Blocks locked at Power-up

   – Any combination of Blocks can be locked

   – WPF for Block Lock-Down

■ SECURITY

   – 128-bit user programmable OTP cells

   – 64-bit unique device number

■ COMMON Flash INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per Block



PSRAM

■ ACCESS TIME: 70ns

■ LOW STandBY CURRENT: 110µA

■ DEEP POWER DOWN CURRENT: 10µA



 


Part Name(s) : M29W160EB M29W160EB79N6 M29W160EB79N6E M29W160EB79N6F M29W160EB79N6T M29W160EB79ZA6 M29W160EB79ZA6E M29W160EB79ZA6F M29W160EB79ZA6T M29W160EB90N6 ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory View

SUMMARY DESCRIPTION

The M29W160E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the Memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.



FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VCC = 2.7V to 3.6V for Program, Erase and Read

■ ACCESS TIMES: 70, 90ns

■ PROGRAMMING TIME

– 10µs per Byte/Word typical

■ 35 Memory BlockS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithms

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMand

– Faster Production/Batch Programming

■ TEMPORARY Block UNPROTECTION MODE

■ COMMON Flash INTERFACE

– 64 bit Security Code

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per Block

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160ET: 22C4h

– Bottom Device Code M29W160EB: 2249h


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]