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Part Name(s) : AM29F040B-1 AMD
Advanced Micro Devices
Description : 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory View

GENERAL DESCRIPTION
The Am29F040B is a 4 Mbit, 5.0 volt-only Flash Memory organized as 524,288 Kbytes of 8 bits each. The
512 Kbytes of data are divided into eight Sectors of 64
Kbytes each for flexible erase capability. The 8 bits of
data appear on DQ0–DQ7. The Am29F040B is offered
in 32-pin PLCC, TSOP, and PDIP packages. This device
is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not
required for write or erase operations. The device can
also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
5.0 V ± 10% for read and write operations
    — Minimizes system level power requirements
■ Manufactured on 0.32 µm process technology
    — Compatible with 0.5 µm Am29F040 device
■ High performance
    — Access times as fast as 55 ns
■ Low power consumption
    — 20 mA typical active read current
    — 30 mA typical program/erase current
    — 1 µA typical standby current (standard access time to active mode)
■ Flexible Sector architecture
    — 8 Uniform Sectors of 64 Kbytes each
    — Any combination of Sectors can be erased
    — Supports full chip erase
    — Sector protection:
        A hardware method of locking Sectors to prevent any program or erase operations within that Sector
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
    — Embedded Program algorithm automatically writes and verifies bytes at specified addresses
■ Minimum 1,000,000 program/erase cycles per Sector guaranteed
■ 20-year data retention at 125°C
    — Reliable operation for the life of the system
■ Package options
    — 32-pin PLCC, TSOP, or PDIP
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply Flash standard
    — Superior inadvertent write protection
■ Data# Polling and toggle bits
    — Provides a software method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends a Sector erase operation to read data from, or program data to, a non-erasing Sector, then resumes the erase operation

Part Name(s) : AM29F010-1 AMD
Advanced Micro Devices
Description : 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1 View

GENERAL DESCRIPTION
The Am29F010 in Known Good Die (KGD) form is a 1 Mbit, 5.0 Volt-only Flash Memory. AMD defines KGD as standard product in die form, tested for functionality and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — 5.0 V ± 10% for read, erase, and program operations
    — Simplifies system-level power requirements
■ High performance
    — 90 or 120 ns maximum access time
■ Low power consumption
    — 30 mA max active read current
    — 50 mA max program/erase current
    — <25 µA typical standby current
■ Flexible Sector architecture
    — Eight Uniform Sectors
    — Any combination of Sectors can be erased
    — Supports full chip erase
Sector protection
    — Hardware-based feature that disables/reenables program and erase operations in any combination of Sectors
    — Sector protection/unprotection can be implemented using standard PROM programming equipment
■ Embedded Algorithms
    — Embedded Erase algorithm automatically pre-programs and erases the chip or any combination of designated Sector
    — Embedded Program algorithm automatically programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles guaranteed
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply Flash
    — Superior inadvertent write protection
■ Data Polling and Toggle Bits
    — Provides a software method of detecting program or erase cycle completion
■ Tested to datasheet specifications at temperature
■ Quality and reliability levels equivalent to standard packaged components

Part Name(s) : AM29LV6402M AM29LV6402MH100R AM29LV6402MH110R AM29LV6402ML100R AM29LV6402ML110R L6402MH10RI L6402ML11RI AM29LV6402MH100RPHI AM29LV6402MH110RPHI AM29LV6402ML100RPHI AMD
Advanced Micro Devices
Description : 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control View

GENERAL DESCRIPTION
The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply Flash Memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
    — 3 volt read, erase, and program operations
■ VersatileI/OTM control
    — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBitTM process technology
■ SecSi™ (Secured Silicon) Sector region
    — 128-doubleword/256-word Sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence
    — May be programmed and locked at the factory or by the customer
■ Flexible Sector architecture
    — One hundred twenty-eight 32 Kdoubleword (64 Kword) Sectors
■ Compatibility with JEDEC standards
    — Provides pinout and software compatibility for single-power supply Flash, and superior inadvertent write protection
■ 100,000 erase cycles per Sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
■ High performance
    — 100 ns access time
    — 30 ns page read times
    — 0.5 s typical Sector erase time
    — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates
    — 4-doubleword/8-word page read buffer
    — 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
    — 26 mA typical active read current
    — 100 mA typical erase/program current
    — 2 µA typical standby mode current
■ Package options
    — 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
    — Program Suspend & Resume: read other Sectors before programming operation is completed
    — Erase Suspend & Resume: read/program other Sectors before an erase operation is completed
    — Data# polling & toggle bits provide status
    — Unlock Bypass Program command reduces overall multiple-word or byte programming time
    — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple Flash devices
■ Hardware features
    — Sector Group Protection: hardware-level method of preventing write operations within a Sector group
    — Temporary Sector Unprotect: VID-level method of changing code in locked Sectors
    — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last Sector regardless of Sector protection settings
    — Hardware reset input (RESET#) resets device
    — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

Part Name(s) : EN29LV160C EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70BIP EN29LV160CT-70TIP Eon
Eon Silicon Solution Inc.
Description : 16 Megabit (2048K x 8-Bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only View

GENERAL DESCRIPTION

The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile Flash Memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.



FEATURES

• 3.0V, single power supply operation

   - Minimizes system level power requirements

• High performance

   - Access times as fast as 70 ns

• Low power consumption (typical values at 5 MHz)

   - 9 mA typical active read current

   - 20 mA typical program/erase current

   - Less than 1 μA standby current

• Flexible Sector Architecture:

   - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte Sectors (byte mode)

   - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword Sectors (word mode)

Sector protection :

   - Hardware locking of Sectors to prevent program or erase operations within individual Sectors

   - Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.

• Secured Silicon Sector

   - Provides a 128-words area for code or data that can be permanently protected.

   - Once this Sector is protected, it is prohibited to program or erase within the Sector again.

• High performance program/erase speed

   - Byte/Word program time: 8µs typical

   - Sector erase time: 100ms typical

   - Chip erase time: 4s typical

• JEDEC Standard program and erase commands

• JEDEC standard DATA# polling and toggle bits feature

• Single Sector and Chip Erase

Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode

• Triple-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• minimum 100K program/erase endurance cycle

• Package Options

   - 48-pin TSOP (Type 1)

   - 48 ball 6mm x 8mm TFBGA

• Industrial Temperature Range



 



Part Name(s) : AM29F016D-120E4D AM29F016D-120E4F AM29F016D-120ED AM29F016D-120EF AM29F016D-120SD AM29F016D-120SF AM29F016D-70E4D AM29F016D-70E4F AM29F016D-70ED AM29F016D-70EF AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory View

GENERAL DESCRIPTION
The Am29F016D is a 16 Mbit, 5.0 volt-only Flash Memory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F016D is offered in 48-pin TSOP, 40-pin TSOP, and 44-pin SO packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21551. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
5.0 V ± 10%, single power supply operation
    — Minimizes system level power requirements
■ Manufactured on 0.23 µm process technology
    — Compatible with 0.5 µm Am29F016 and 0.32 µm Am29F016B devices
■ High performance
    — Access times as fast as 70 ns
■ Low power consumption
    — 25 mA typical active read current
    — 30 mA typical program/erase current
    — 1 µA typical standby current (standard access time to active mode)
■ Flexible Sector architecture
    — 32 Uniform Sectors of 64 Kbytes each
    — Any combination of Sectors can be erased
    — Supports full chip erase
    — Group Sector protection:
        A hardware method of locking Sector groups to prevent any program or erase operations within that Sector group
        Temporary Sector Group Unprotect allows code changes in previously locked Sectors
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
    — Embedded Program algorithm automatically writes and verifies bytes at specified addresses
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Minimum 1,000,000 program/erase cycles per Sector guaranteed
■ 20-year data retention at 125°C
    — Reliable operation for the life of the system
■ Package options
    — 48-pin and 40-pin TSOP
    — 44-pin SO
    — Known Good Die (KGD) (see publication number 21551)
■ Compatible with JEDEC standards
    — Pinout and software compatible with single-power-supply Flash standard
    — Superior inadvertent write protection
■ Data# Polling and toggle bits
    — Provides a software method of detecting program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
    — Provides a hardware method for detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends a Sector erase operation to read data from, or program data to, a non-erasing Sector, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Resets internal state machine to the read mode

Part Name(s) : S29AL016 S29AL016D S29AL016D70TAI010 S29AL016D70TAI011 S29AL016D70TFI012 S29AL016D70TFI013 Spansion
Spansion Inc.
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

The S29AL016D is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words.







The device is offered in 48-ball FBGA, and 48-pinTSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in system with the standard system 3.0 volt VCCsupply. A 12.0 V VPPor 5.0 VCCare not required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : EN25D16 EN25D16-100FI EN25D16-100FIP EN25D16-100HI EN25D16-100HIP EN25D16-100QI EN25D16-100QIP EN25D16-100VI EN25D16-100VIP EN25D16-75FI Eon
Eon Silicon Solution Inc.
Description : 16 Megabit Serial Flash Memory with 4Kbyte Uniform Sector and Dual Output View

GENERAL DESCRIPTION

The EN25D16 is a 16M-bit (2048K-byte) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The Memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25D16 is designed to allow either single Sector at a time or full chip erase operation. The EN25D16 can be configured to protect part of the Memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each Sector.



FEATURES

•Single power supply operation

- Full voltage range: 2.7-3.6 volt

16 Mbit Serial Flash

- 16 M-bit/2048 K-byte/8192 pages

- 256 bytes per programmable page

•High performance

- 75MHz clock rate

- Dual Output Fast Read instruction

• Low power consumption

- 5 mA typical active current

- 1 μA typical power down current

Uniform Sector Architecture:

- 512 Sectors of 4-Kbyte

- 32 blocks of 64-Kbyte

- Any Sector or block can be

erased individually


Part Name(s) : AM29LV200 AM29LV200B AMD
Advanced Micro Devices
Description : 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 volt-only boot Sector Flash Memory View

The Am29LV200 is a 2 Mbit, 3.0 volt-only Flash Memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.



This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : AM29F160D AM29F160DB AM29F160DB120 AM29F160DB75 AM29F160DB90 AM29F160DT AM29F160DT120 AM29F160DT75 AM29F160DT90 AM29F160DT75EC AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View

GENERAL DESCRIPTION
The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash Memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
5.0 Volt single power supply operation
   — Minimizes system-level power requirements
■ High performance
   — Access times as fast as 70 ns
■ Manufactured on 0.25 µm process technology
■ CFI (Common Flash Interface) compliant
   — Provides device-specific information to the
      system, allowing host software to easily
      reconfigure for different Flash devices
■ Ultra low power consumption (typical values at 5 MHz)
   — 15 mA typical active read current
   — 35 mA typical erase/program current
   — 300 nA typical standby mode current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      thirty-one 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      thirty-one 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
   — Hardware method of locking a Sector to prevent
      program or erase operations within that Sector
   — Sectors can be locked in-system or via
      programming equipment
   — Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Top boot or bottom boot configurations available
■ Minimum 1,000,000 write cycle guarantee per Sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 48-pin TSOP (Continue ...)

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