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Part Name(s) : S29AL016 S29AL016D S29AL016D70TAI010 S29AL016D70TAI011 S29AL016D70TFI012 S29AL016D70TFI013 Spansion
Spansion Inc.
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

The S29AL016D is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words.







The device is offered in 48-ball FBGA, and 48-pinTSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in system with the standard system 3.0 volt VCCsupply. A 12.0 V VPPor 5.0 VCCare not required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : AM29F160D AM29F160DB AM29F160DB120 AM29F160DB75 AM29F160DB90 AM29F160DT AM29F160DT120 AM29F160DT75 AM29F160DT90 AM29F160DT75EC AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View

GENERAL DESCRIPTION
The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash Memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ 5.0 Volt single power supply operation
   — Minimizes system-level power requirements
■ High performance
   — Access times as fast as 70 ns
■ Manufactured on 0.25 µm process technology
■ CFI (Common Flash Interface) compliant
   — Provides device-specific information to the
      system, allowing host software to easily
      reconfigure for different Flash devices
■ Ultra low power consumption (typical values at 5 MHz)
   — 15 mA typical active read current
   — 35 mA typical erase/program current
   — 3.0 nA typical standby mode current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      thirty-one 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      thirty-one 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
   — Hardware method of locking a Sector to prevent
      program or erase operations within that Sector
   — Sectors can be locked in-system or via
      programming equipment
   — Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Top Boot or bottom Boot configurations available
■ Minimum 1,000,000 write cycle guarantee per Sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 48-pin TSOP (Continue ...)

Part Name(s) : EN29LV160C EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70BIP EN29LV160CT-70TIP Eon
Eon Silicon Solution Inc.
Description : 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only View

GENERAL DESCRIPTION

The EN29LV160C is a 16-Megabit, electrically erasable, read/write non-volatile Flash Memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.



FEATURES

3.0V, single power supply operation

   - Minimizes system level power requirements

• High performance

   - Access times as fast as 70 ns

• Low power consumption (typical values at 5 MHz)

   - 9 mA typical active read current

   - 20 mA typical program/erase current

   - Less than 1 μA standby current

• Flexible Sector Architecture:

   - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte Sectors (byte mode)

   - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword Sectors (word mode)

Sector protection :

   - Hardware locking of Sectors to prevent program or erase operations within individual Sectors

   - Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.

• Secured Silicon Sector

   - Provides a 128-words area for code or data that can be permanently protected.

   - Once this Sector is protected, it is prohibited to program or erase within the Sector again.

• High performance program/erase speed

   - Byte/Word program time: 8µs typical

   - Sector erase time: 100ms typical

   - Chip erase time: 4s typical

• JEDEC Standard program and erase commands

• JEDEC standard DATA# polling and toggle bits feature

• Single Sector and Chip Erase

Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode

• Triple-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhibit < 2.5V

• minimum 100K program/erase endurance cycle

• Package Options

   - 48-pin TSOP (Type 1)

   - 48 ball 6mm x 8mm TFBGA

• Industrial Temperature Range



 


Part Name(s) : AM29F160D AM29F160DB70 AM29F160DB70EC AM29F160DB70ED AM29F160DB70EF AM29F160DB70EI AM29F160DB75 AM29F160DB75EC AM29F160DB75ED AM29F160DB75EF Spansion
Spansion Inc.
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View

GENERAL DESCRIPTION

The Am29F160D is a 16 Mbit, 5.0 Volt-only Flash Memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.



DISTINCTIVE CHARACTERISTICS

■ 5.0 Volt single power supply operation

   — Minimizes system-level power requirements

■ High performance

   — Access times as fast as 70 ns

■ Manufactured on 0.23 µm process technology

■ CFI (Common Flash Interface) compliant

   — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Ultra low power consumption (typical values at 5 MHz)

   — 15 mA typical active read current

   — 35 mA typical erase/program current

   — 3.0 nA typical standby mode current

■ Flexible Sector architecture

   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte Sectors (byte mode)

   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword Sectors (word mode)

   — Supports full chip erase

   — Sector Protection features:

   — Hardware method of locking a Sector to prevent program or erase operations within that Sector

   — Sectors can be locked in-system or via programming equipment

   — Temporary Sector Unprotect feature allows code changes in previously locked Sectors

■ Top Boot or bottom Boot configurations available

■ Minimum 1,000,000 write cycle guarantee per Sector

■ 20-year data retention at 125°C

   — Reliable operation for the life of the system

■ Package options

   — 48-pin TSOP

■ Compatible with JEDEC standards

   — Pinout and software compatible with single power supply Flash

   — Superior inadvertent write protection

■ Embedded Algorithms

   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors

   — Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Erase Suspend/Erase Resume

   — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation

■ Data# Polling and toggle bits

   — Provides a software method of detecting program or erase operation completion

■ Unlock Bypass Program command

   — Reduces overall programming time when issuing multiple program command sequences

■ Ready/Busy# pin (RY/BY#)

   — Provides a hardware method of detecting program or erase cycle completion

■ Hardware reset pin (RESET#)

   — Hardware method to reset the device for reading array data

■ WP# input pin

   — At VIL, protects the 16 Kbyte Boot Sector from erasure regardless of Sector protect/unprotect status

   — At VIH, allows removal of Boot Sector protection

■ Program and Erase Performance

   — Sector erase time: 1 s typical for each 64 Kbyte Sector

   — Byte program time: 7 µs typical



 



Part Name(s) : AM29LV200 AM29LV200B AMD
Advanced Micro Devices
Description : 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

The Am29LV200 is a 2 Mbit, 3.0 Volt-only Flash Memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.



This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : AM29LV004B-1 AMD
Advanced Micro Devices
Description : 4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

GENERAL DESCRIPTION
The Am29LV004B is an 4 Mbit, 3.0 Volt-only Flash Memory organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
    — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29LV004 device
■ High performance
    — Full voltage range: access times as fast as 80 ns
    — Regulated voltage range: access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
■ Flexible Sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte Sectors
    — Supports full chip erase
    — Sector Protection features:
        A hardware method of locking a Sector to prevent any program or erase operations within that Sector
        Sectors can be locked in-system or via programming equipment
        Temporary Sector Unprotect feature allows code changes in previously locked Sectors
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
    — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per Sector
■ Package option
    — 40-pin TSOP
■ Compatibility with JEDEC standards
    — Pinout and software compatible with singlepower supply Flash
    — Superior inadvertent write protection
■ Data# Polling and toggle bits
    — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading array data

Part Name(s) : AM29LV160BB80R AM29LV160BB80REC AM29LV160BB80RECB AM29LV160BB80REE AM29LV160BB80REEB AM29LV160BB80REI AM29LV160BB80REIB AM29LV160BB80RFC AM29LV160BB80RFCB AM29LV160BB80RFE AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

GENERAL DESCRIPTION

The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.



DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

   — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ Manufactured on 0.35 µm process technology

■ Supports Common Flash Memory Interface (CFI)

■ High performance

   — Full voltage range: access times as fast as 90 ns

   — Regulated voltage range: access times as fast as 80 ns

■ Ultra low power consumption (typical values at 5 MHz)

   — 200 nA Automatic Sleep mode current

   — 200 nA standby mode current

   — 9 mA read current

   — 20 mA program/erase current

■ Flexible Sector architecture

   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte Sectors (byte mode)

   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword Sectors (word mode)

   — Supports full chip erase

   — Sector Protection features:

      A hardware method of locking a Sector to prevent any program or erase operations within that Sector

      Sectors can be locked in-system or via programming equipment

      Temporary Sector Unprotect feature allows code changes in previously locked Sectors

■ Unlock Bypass Program Command

   — Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom Boot block configurations available

■ Embedded Algorithms

   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors

   — Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per Sector

■ Package option

   — 48-ball FBGA

   — 48-pin TSOP

   — 44-pin SO

■ CFI (Common Flash Interface) compliant

   — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices

■ Compatibility with JEDEC standards

   — Pinout and software compatible with single power supply Flash

   — Superior inadvertent write protection

■ Data# Polling and toggle bits

   — Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

   — Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)

■ Erase Suspend/Erase Resume

   — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

   — Hardware method to reset the device to reading array data



 


Part Name(s) : AM29LV160M AM29LV160MB100 AM29LV160MB100EI AM29LV160MB100FI AM29LV160MB100PCI AM29LV160MB100WAI AM29LV160MB70R AM29LV160MB70REI AM29LV160MB70RFI AM29LV160MB70RPCI AMD
Advanced Micro Devices
Description : 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit™ 3.0 Volt-only Boot Sector Flash Memory View

General Description

The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers.



Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

   — 3 V for read, erase, and program operations

■ Manufactured on 0.23 µm MirrorBitTM process technology

   — Fully compatible with Am29LV160D device

■ Secured Silicon Sector region

   — 128-word/256-byte Sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

   — May be programmed and locked at the factory or by the customer

■ Flexible Sector architecture

   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty one 64 Kbyte Sectors (byte mode)

   — One 8 Kword, two 4 Kword, one 16 Kword, and thirty one 32 Kword Sectors (word mode)

■ Compatibility with JEDEC standards

   — Provides pinout and software compatibility for single power supply Flash, and superior inadvertent write protection

■ Top or bottom Boot block configurations available

■ Minimum 100,000 erase cycle guarantee per Sector

■ 20-year data retention at 125°C Performance Characteristics

■ High performance

   — Access times as fast as 70 ns

   — 0.7 s typical Sector erase time

■ Low power consumption (typical values at 5 MHz)

   — 400 nA standby mode current

   — 15 mA read current

   — 40 mA program/erase current

   — 400 nA Automatic Sleep mode current

■ Package options

   — 48-ball Fine-pitch BGA

   — 64-ball Fortified BGA

   — 48-pin TSOP

 

Software Features

   — Program Suspend & Resume: read other Sectors before programming operation is completed

   — Erase Suspend & Resume: read/program other Sectors before an erase operation is completed

   — Data# polling & toggle bits provide status

   — Unlock Bypass Program command reduces overall multiple-word programming time

   — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple Flash devices



Hardware Features

   — Sector Protection: hardware-level method of preventing write operations within a Sector

   — Temporary Sector Unprotect: VID-level method of changing code in locked Sectors

   — Hardware reset input (RESET#) resets device

   — Ready/Busy# output (RY/BY#) indicates program or erase cycle completion



 


Part Name(s) : AM29LV6402M AM29LV6402MH100R AM29LV6402MH110R AM29LV6402ML100R AM29LV6402ML110R L6402MH10RI L6402ML11RI AM29LV6402MH100RPHI AM29LV6402MH110RPHI AM29LV6402ML100RPHI AMD
Advanced Micro Devices
Description : 128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O™ Control View

GENERAL DESCRIPTION
The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply Flash Memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
    — 3 volt read, erase, and program operations
■ VersatileI/OTM control
    — Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
■ Manufactured on 0.23 µm MirrorBitTM process technology
■ SecSi™ (Secured Silicon) Sector region
    — 128-doubleword/256-word Sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence
    — May be programmed and locked at the factory or by the customer
■ Flexible Sector architecture
    — One hundred twenty-eight 32 Kdoubleword (64 Kword) Sectors
■ Compatibility with JEDEC standards
    — Provides pinout and software compatibility for single-power supply Flash, and superior inadvertent write protection
■ 100,000 erase cycles per Sector
■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS
■ High performance
    — 100 ns access time
    — 30 ns page read times
    — 0.5 s typical Sector erase time
    — 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates
    — 4-doubleword/8-word page read buffer
    — 16-doubleword/32-word write buffer
■ Low power consumption (typical values at 3.0 V, 5 MHz)
    — 26 mA typical active read current
    — 100 mA typical erase/program current
    — 2 µA typical standby mode current
■ Package options
    — 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES
■ Software features
    — Program Suspend & Resume: read other Sectors before programming operation is completed
    — Erase Suspend & Resume: read/program other Sectors before an erase operation is completed
    — Data# polling & toggle bits provide status
    — Unlock Bypass Program command reduces overall multiple-word or byte programming time
    — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple Flash devices
■ Hardware features
    — Sector Group Protection: hardware-level method of preventing write operations within a Sector group
    — Temporary Sector Unprotect: VID-level method of changing code in locked Sectors
    — WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last Sector regardless of Sector protection settings
    — Hardware reset input (RESET#) resets device
    — Ready/Busy# output (RY/BY#) detects program or erase cycle completion

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