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Part Name(s) : MC-4516CB647XFA MC-4516CB647XFA-A75 Elpida
Elpida Memory, Inc
Description : 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description

The MC-4516CB647XFA is 16,777,216 words BY 64 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

• 16,777,216 words BY 64 bits organization

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and full page)

• ProgRAMmable wrap sequence (sequential / interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination BY Burst Stop command and Precharge command

• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

UNBUFFERED TYPE

• Serial PD



 


Part Name(s) : MC-454AD644-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-4516CB647 MC-4516CB647EF-A75 MC-4516CB647PF-A75 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description

The MC-4516CB647EF and MC-4516CB647PF are 16,777,216 words BY 64 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

• 16,777,216 words BY 64 bits organization

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and full page)

• ProgRAMmable wrap sequence (sequential / interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination BY Burst Stop command and Precharge command

• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

UNBUFFERED TYPE

• Serial PD



 


Part Name(s) : MC-4516CB647 MC-4516CB647EF-A75 MC-4516CB647PF-A75 MC-4516CB647XF-A75 Elpida
Elpida Memory, Inc
Description : 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description

The MC-4516CB647EF, MC-4516CB647PF and MC-4516CB647XF are 16,777,216 words BY 64 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

• 16,777,216 words BY 64 bits organization

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and full page)

• ProgRAMmable wrap sequence (sequential / interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination BY Burst Stop command and Precharge command

• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

UNBUFFERED TYPE

• Serial PD



 



Part Name(s) : MC-454AC724 MC-454AC724F-A10 MC-454AC724F-A12 MC-454AC724F-A67 MC-454AC724-A10 MC-454AC724-A67 MC-454AC724-A12 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-4532CD647XFA-A75 MC-4532CD647XFA Elpida
Elpida Memory, Inc
Description : 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4532CD647XFA is 33,554,432 words BY 64 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 16 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words BY 64 bits organization
• Clock frequency and access time from CLK.
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (Sequential / Interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-45V16AD641 MC-45V16AD641EF-A10 MC-45V16AD641EF-A75 MC-45V16AD641KF-A10 MC-45V16AD641KF-A75 MC-45V16AD641KF-A15 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 64-BIT VirtualChannel™ SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-45V16AD641 is a 16,777,216 words BY 64 bits VirtualChannel SYNCHRONOUS DYNAMIC RAM MODULE on which 16 pieces of 64M VirtualChannel SDRAM : µPD4565821 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 64 bits organization
• Clock frequency and access time from CLK
• Fully Standard SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Dual internal banks controlled BY BA0 (Bank Select)
• ProgRAMmable Wrap sequence (Sequential / Interleave)
• ProgRAMmable burst length (1, 2, 4, 8 and 16)
• Read latency (2)
• Prefetch Read latency (4)
• Auto precharge and without auto precharge
• Auto refresh and Self refresh
• Single 3.3 V ± 0.3 V power supply
• Interface: LVTTL
• Refresh cycle: 4K cycles / 64 ms
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-4516CB646 MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646PF-A10 MC-4516CB646PF-A80 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description

The MC-4516CB646 is a 16,777,216 words BY 64 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 8 pieces of 128M SDRAM: µPD45128841 are assembled.

This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.



Features

• 16,777,216 words BY 64 bits organization

• Clock frequency and access time from CLK

• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled BY BA0 and BA1 (Bank Select)

• ProgRAMmable burst-length (1, 2, 4, 8 and full page)

• ProgRAMmable wrap sequence (sequential / interleave)

• ProgRAMmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ±10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles/64 ms

• Burst termination BY Burst Stop command and Precharge command

• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)

UNBUFFERED TYPE

• Serial PD



 


Part Name(s) : MC-4516CA727EF-A75 MC-4516CA727PF-A75 MC-4516CA727 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA727EF and MC-4516CA727PF are 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

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