Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : MC-454AD644-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-454AC724 MC-454AC724F-A10 MC-454AC724F-A12 MC-454AC724F-A67 MC-454AC724-A10 MC-454AC724-A67 MC-454AC724-A12 NEC
NEC => Renesas Technology
Description : 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

Part Name(s) : MC-4516CA727XFA-A75 MC-4516CA727XFA Elpida
Elpida Memory, Inc
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA727XFA is 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-4516CA727EF-A75 MC-4516CA727PF-A75 MC-4516CA727 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA727EF and MC-4516CA727PF are 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD


Part Name(s) : MC-4516DA727LF-A75 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE View

Description
The MC-4516DA727LF is a 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 64M SDRAM: µPD45128841 are assembled, and the MC-4516DA727EFA is a 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: μPD45128841 are assembled. 
These MODULEs provide high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK.
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and Full Page)
• ProgRAMmable wrap sequence (Sequential / Interleave)
• /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ±0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
• Registered TYPE
• Serial PD

Part Name(s) : MC-4532CC727XFA MC-4532CC727XFA-A75 Elpida
Elpida Memory, Inc
Description : 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4532CC727XFA is 33,554,432 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK.
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (Sequential / Interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-4532CC726XFA-A80 MC-4532CC726XFA Elpida
Elpida Memory, Inc
Description : 32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4532CC726XFA is 33,554,432 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 33,554,432 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length: 1, 2, 4, 8 and full page
• ProgRAMmable wrap sequence (Sequential / Interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-4516CA726 MC-4516CA726EF-A80 MC-4516CA726EF-A10 MC-4516CA726PF-A80 MC-4516CA726PF-A10 NEC
NEC => Renesas Technology
Description : 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View

Description
The MC-4516CA726 is a 16,777,216 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surface mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 16,777,216 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

Part Name(s) : MC-458CA727 MC-458CA727EFA-A75 MC-458CA727PFA-A75 Elpida
Elpida Memory, Inc
Description : 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE View


Description
The MC-458CA727EFA and MC-458CA727PFA are 8,388,608 words BY 72 bits SYNCHRONOUS DYNAMIC RAM MODULE on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.
This MODULE provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.

Features
• 8,388,608 words BY 72 bits organization (ECC TYPE)
• Clock frequency and access time from CLK
• Fully SYNCHRONOUS DYNAMIC RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled BY BA0 and BA1 (Bank Select)
• ProgRAMmable burst-length (1, 2, 4, 8 and full page)
• ProgRAMmable wrap sequence (sequential / interleave)
• ProgRAMmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ± 10 % of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles /64 ms
• Burst termination BY Burst Stop command and Precharge command
• 168-pin dual in-line memory MODULE (Pin pitch = 1.27 mm)
UNBUFFERED TYPE
• Serial PD

12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2020  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]