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Part Name(s) : NX29F010 NX29F010-35PL NX29F010-35T NX29F010-35W NX29F010-45PL NX29F010-45PLI NX29F010-45T NX29F010-45TI NX29F010-45W NX29F010-55PL NexFlash
NexFlash -> Winbond Electronics
Description : 1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY View

DESCRIPTION
TheNexFLASH NX29F010 is a 1 Megabit (131,072 bytes) single 5.0V-Only SECTORED FLASH MEMORY. The NX29F010 provides in-system programming with the standard system 5.0V-Only Vcc supply and can be programmed or erased in standard PROM programmers.

FEATURES
ULTRA-FAST Performance
    – 35, 45, 55, 70, and 90 ns max. access times
• Temperature Ranges
    – Commercial 0oc-70oc
    – Industrial -40oc-85oc
• Single 5V-Only Power Supply
    – 5V ± 10% for Read, Program, and Erase
• CMOS Low Power Consumption
    – 20 mA (typical) active read current
    – 30 mA (typical) Program/Erase current
• Compatible with JEDEC-Standard Pinouts
    – 32-pin DIP, PLCC, TSOP
• Program/function Compatible with AM29F010
    – No system firmware changes
    – Uses same PROM programer algorithm
• Flexible sector architecture
    – Erase any of eight uniform sectors or full chip erase
    – Sector protection/unprotection using PROM programming equipment
• 100,000 Program/Erase cycles
• Embedded algorithms
    – Automatically programs and verifies data at specified address
    – Auto-programs and erases the chip or any designated sector
• Data/Polling and Toggle Bits
    – Detect program or erase cycle completion

Part Name(s) : NX29F010 NX29F010-35T NX29F010-35W NX29F010-45PL NX29F010-45T NX29F010-45W NX29F010-55PL NX29F010-55W NX29F010-70PL NX29F010-70T ETC
Unspecified
Description : 1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY View

[NEXFLASH]

DESCRIPTION
TheNexFLASH NX29F010 is a 1 Megabit (131,072 bytes) single 5.0V-Only SECTORED FLASH MEMORY. The NX29F010 provides in-system programming with the standard system 5.0V-Only Vcc supply and can be programmed or erased in standard PROM programmers.
The NX29F010 offers access times of 35, 45, 55, 70, and 90 ns allowing high-speed controller and DSPs to operate without wait states. Byte-wide data appears on DQ0-DQ7. Separate chip enable (CE), write enable (WE), and output enable (OE) controls eliminates bus contention.
Power consumption is greatly reduced when the system places the device into the Standby Mode.
The device is offered in 32-pin PLCC, TSOP, and PDIP packages.

FEATURES
ULTRA-FAST Performance
   – 35, 45, 55, 70, and 90 ns max. access times
• Temperature Ranges
   – Commercial 0°C-70°C
   – Industrial -40°C-85°C
• Single 5V-Only Power Supply
   – 5V ± 10% for Read, Program, and Erase
• CMOS Low Power Consumption
   – 20 mA (typical) active read current
   – 30 mA (typical) Program/Erase current
• Compatible with JEDEC-Standard Pinouts
   – 32-pin DIP, PLCC, TSOP
• Program/function Compatible with AM29F010
   – No system firmware changes
– Uses same PROM programer algorithm

• Flexible sector architecture
   – Erase any of eight uniform sectors or full chip erase
   – Sector protection/unprotection using PROM programming equipment
• 100,000 Program/Erase cycles
• Embedded algorithms
   – Automatically programs and verifies data at specified address
   – Auto-programs and erases the chip or any designated sector
• Data/Polling and Toggle Bits
   – Detect program or erase cycle completion

Part Name(s) : 25X10BLIG 25X10BLNIG 25X20BLIG 25X20BLNIG 25X40BLAIG 25X40BLIG 25X40BLNIG 25X40BLSIG W25X10BL W25X10BLSNIG Winbond
Winbond
Description : 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI View

GENERAL DESCRIPTION

The W25X10BL (1M-BIT), W25X20BL (2M-bit) and the W25X40BL (4M-bit) Serial FLASH memories provides a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial FLASH devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.3V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. All devices are offered in space-saving packages.





FEATURES

• Family of Serial FLASH Memories

– W25X10BL: 1M-BIT/128K-byte (131,072)

– W25X20BL: 2M-bit/256K-byte (262,144)

– W25X40BL: 4M-bit/512K-byte (524,288)

– 256-bytes per programmable page

– Uniform 4KB Sectors, 32KB & 64KB Blocks

• SPI with Single / Dual Outputs / Dual I/O

– Clock, Chip Select, Data I/O, Data Out

– Optional Hold function for SPI flexibility

• Data Transfer up to 100M-bits / second

– Clock operation to 50MHz

– Fast Read Dual Output instruction

– Auto-increment Read capability

• Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read

– As few as 8 clocks to address MEMORY

– Allows true XIP (execute in place) operation

• Software and Hardware Write Protection

– Write-Protect all or portion of MEMORY

– Enable/Disable protection with /WP pin

– Top or bottom array protection

– Volatile & Non-volatile Status Register Bits

• Flexible Architecture with 4KB sectors

– Sector Erase (4K-bytes)

– Block Erase (32K and 64K-byte)

– Page program up to 256 bytes <1ms

– More than 100,000 erase/write cycles

– More than 20-year retention

• Low Power Consumption, Wide

Temperature Range

– Single 2.3 to 3.6V supply

– 4mA active current, 1µA Power-down (typ)

– -40° to +85°C operating range

• Space Efficient Packaging

– 8-pin SOIC 150-mil

– 8-pin SOIC 208-mil

– 8-pad WSON 6x5-mm

– 8-pin PDIP 300-mil


Part Name(s) : 25X10ALAIZ 25X10ALIG 25X10ALNIG 25X20ALAIZ 25X20ALIG 25X20ALNIG 25X40ALAIZ 25X40ALIG 25X40ALNIG 25X40ALS32 Winbond
Winbond
Description : 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI View

The W25X10AL (1M-BIT), W25X20AL (2M-bit), W25X40AL (4M-bit) and W25X80AL (8M-bit) Serial FLASH memories provide a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial FLASH devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.3V to 3.6V power supply with current consumption as low as 5mA active and 1µA for power-down.

All devices are offered inspace-saving packages. 





 



Part Name(s) : W25X10L W25X20L W25X40L W25X80L W25X10LSNE W25X10LSNEG W25X10LSSE W25X10LSSEG W25X10LZPE W25X10LZPEG Winbond
Winbond
Description : 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI View

GENERAL DESCRIPTION
The W25X10L (1M-BIT), W25X20L (2M-bit), W25X40L (4M-bit) and W25X80L (8M-bit) Serial FLASH memories provide a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial FLASH devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.5V ( a range of 2.3V to 3.3V) power supply with current consumption as low as 5mA active and 1µA for power-down. All devices are offered in space-saving packages.
The W25X10L/20L/40L/80L array is organized into 512/1024/2048/4096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip (chip erase). The W25X10L/20L/40L/80L has 32/64/128/256 erasable sectors and 2/4/8/16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)
The W25X10L/20L/40L/80L supports the standard Serial Peripheral Interface (SPI), and a high performance dual output SPI and low voltage operation using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial Data Out. SPI clock frequencies of up to 40MHz are supported allowing equivalent clock rates of 80MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 and 16-bit Parallel FLASH memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control features, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification.

FEATURES
• Family of Serial FLASH Memories
   – W25X10L: 1M-BIT / 128K-byte (131,072)
   – W25X20L: 2M-bit / 256K-byte (262,144)
   – W25X40L: 4M-bit / 512K-byte (524,288)
   – W25X80L: 8M-bit / 1M-byte (1,048,576)
   – 256-bytes per programmable page
   – Uniform 4K-byte Sectors / 64K-byte Blocks
• SPI with Single or Dual Outputs
   – Clock, Chip Select, Data I/O, Data Out
   – Optional Hold function for SPI flexibility
• Data Transfer up to 80M-bits / second
   – Clock operation to 40MHz
   – Fast Read Dual Output instruction
   – Auto-increment Read capability
• Flexible Architecture with 4KB sectors
   – Sector Erase (4K-byte)
   – Block Erase (64K-byte)
   – Page program up to 256 bytes <2ms
   – Minimum 100,000 erase/write cycles
   – 20-year retention
• Low Power Consumption, Wide Temperature Range
   – Single 2.3 to 3.3V supply
   – 5mA active current, 1µA Power-down (typ)
   – 0° to +85°C operating range
• Software and Hardware Write Protection
   – Write-Protect all or portion of MEMORY
   – Enable/Disable protection with /WP pin
   – Top or bottom array protection
• Space Efficient Packaging
   – 8-pin SOIC 150-mil (W25X10L/20L/40L)
   – 8-pin SOIC 208-mil (W25X40L/80L)
   – 8-pin WSON 6x5-mm (W25X10L/20L/40L/80L)

Part Name(s) : M6MGB162S4BVP M6MGB_T162S4BVP M6MGT162S4BVP M6MGB/T162S4BVP Mitsubishi
MITSUBISHI ELECTRIC
Description : 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-Only FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-bit) CMOS SRAM Stacked-MCP (Multi Chip Package) View

DESCRIPTION
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Chip Package (S-MCP) that contents 16M-bits FLASH MEMORY and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I).
16M-bits FLASH MEMORY is a 1048576 words, 3.3V-Only, and high performance non-volatile MEMORY fabricated by CMOS technology for the peripheral circuit and DINOR(DIvided bit-line NOR) architecture for the MEMORY cell.
4M-bits SRAM is a 262144words unsynchronous SRAM fabricated by silicon-gate CMOS technology.
M6MGB/T162S4BVP is suitable for the application of the mobile-communication-system to reduce both the mount space and weight.

FEATURES
• Access time                                        
                         FLASH MEMORY           90ns (Max.)
                         SRAM                       85ns (Max.)
• Supply voltage                                 Vcc=2.7 ~ 3.6V
• Ambient temperature                     
                         W version                  Ta=-20 ~ 85°C
• Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch

APPLICATION
   Mobile communication  products

Part Name(s) : M6MFT16S2TP M6MFB16S2TP Mitsubishi
MITSUBISHI ELECTRIC
Description : 16777216-BIT(2M x 8-bit/1Mx 16-BIT) CMOS 3.3V-Only FLASH MEMORY View

DESCRIPTION
The MITSUBISHI M6MFB/T16S2TP is a Multi Chip Package (MCP) that contents 16-Mbit FLASH MEMORY and 2M-bit Staic RAM in a 82-pin TSOP(TYPE-II).

Part Name(s) : MX29LV081 MX29LV081TC-70 MX29LV081TC-90 MX29LV081TI-70 MX29LV081TI-90 Macronix
Macronix International
Description : 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V Only EQUAL SECTOR FLASH MEMORY View

GENERAL DESCRIPTION
The MX29LV081 is a 8-mega bit FLASH MEMORY organized as 1M bytes of 8 bits. MXICs FLASH memories offer the most cost-effective and reliable read/write nonvolatile random access MEMORY. The MX29LV081 is packaged in 40-pin TSOP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers.

FEATURES
• Status Reply
    - Data polling & Toggle bit for detection of program and erase operation completion.
• Ready/Busy pin (RY/BY)
    - Provides a hardware method of detecting program or erase operation completion.
• Sector protection
    - Hardware method to disable any combination of sectors from program or erase operations
    - Any combination of sectors can be erased with erase suspend/resume function.
    - Tempoary sector unprotect allows code changes in previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
    - 40-pin TSOP
• Compatibility with JEDEC standard
    - Pinout and software compatible with single-power supply FLASH
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8
• Single power supply operation
    - 3.0V Only operation for read, erase and program operation
• Fast access time: 70/90ns
• Low power consumption
    - 20mA maximum active current
    - 0.2uA typical standby current
• Command register architecture
    - Byte/word Programming (7us/12us typical)
    - Sector Erase (Sector structure 64K-Byte x16)
• Auto Erase (chip & sector) and Auto Program
    - Automatically erase any combination of sectors with Erase Suspend capability.
    - Automatically program and verify data at specified address
• Erase suspend/Erase Resume
    - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase.

Part Name(s) : MX29F001B MX29F001BPC-12 MX29F001BQC-12 MX29F001BQC-90 MX29F001BTC-12 MX29F001BTC-90 MX29F001BPC-90 MX29F001T MX29F001TPC-12 MX29F001TPC-90 MCNIX
Macronix International
Description : 1M-BIT [128K x 8] CMOS FLASH MEMORY View

GENERAL DESCRIPTION
The MX29F001T/B is a 1-mega bit FLASH MEMORY organized as 128K bytes of 8 bits Only MXICs FLASH memories offer the most cost-effective and reliable read/write non-volatile random access MEMORY. The MX29F001T/B is packaged in 32-pin PLCC, TSOP, PDIP. It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.

FEATURES
5.0V ± 10% for read, erase and write operation
• 131072x8 Only organization
• Fast access time: 90/120ns
• Low power consumption
    - 30mA maximum active current(5MHz)
    - 1uA typical standby current
• Command register architecture
    - Byte Programming (7us typical)
    - Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte x 2, 32K-Byte x 1, and 64K-Byte x 1)
• Auto Erase (chip & sector) and Auto Program
    - Automatically erase any combination of sectors with Erase Suspend capability.
    - Automatically programs and verifies data at specified address
• Erase Suspend/Erase Resume
    – Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
• Status Reply
    - Data polling & Toggle bit for detection of program and erase cycle completion.
• Chip protect/unprotect for 5V Only system or 5V/12V system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Boot Code Sector Architecture
    - T = Top Boot Sector
    - B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
    - 32-pin PLCC
    - 32-pin TSOP
    - 32-pin PDIP
• Boot Code Sector Architecture
    - T=Top Boot Sector
    - B=Bottom Boot Sector
• 20 years data retention

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