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Part Name(s) : 25X10ALAIZ 25X10ALIG 25X10ALNIG 25X20ALAIZ 25X20ALIG 25X20ALNIG 25X40ALAIZ 25X40ALIG 25X40ALNIG 25X40ALS32 Winbond
Winbond
Description : 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI View

The W25X10AL (1M-bit), W25X20AL (2M-bit), W25X40AL (4M-BIT) AND W25X80AL (8M-bit) SERIAL FLASH MEMORIES provide a storage solution for systems WITH limited space, pins AND power. The 25X series offers flexibility AND performance well beyond ordinary SERIAL FLASH devices. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.3V to 3.6V power supply WITH current consumption as low as 5mA active AND 1µA for power-down.

All devices are offered inspace-saving packages. 





 


Part Name(s) : 25X10BLIG 25X10BLNIG 25X20BLIG 25X20BLNIG 25X40BLAIG 25X40BLIG 25X40BLNIG 25X40BLSIG W25X10BL W25X10BLSNIG Winbond
Winbond
Description : 1M-BIT, 2M-BIT AND 4M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL I/O SPI View

GENERAL DESCRIPTION

The W25X10BL (1M-bit), W25X20BL (2M-bit) AND the W25X40BL (4M-BIT) SERIAL FLASH MEMORIES provides a storage solution for systems WITH limited space, pins AND power. The 25X series offers flexibility AND performance well beyond ordinary SERIAL FLASH devices. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.3V to 3.6V power supply WITH current consumption as low as 4mA active AND 1µA for power-down. All devices are offered in space-saving packages.





FEATURES

• Family of SERIAL FLASH MEMORIES

– W25X10BL: 1M-bit/128K-byte (131,072)

– W25X20BL: 2M-bit/256K-byte (262,144)

– W25X40BL: 4M-BIT/512K-byte (524,288)

– 256-bytes per programmable page

– Uniform 4KB Sectors, 32KB & 64KB Blocks

SPI WITH Single / Dual Outputs / Dual I/O

– Clock, Chip Select, Data I/O, Data Out

– Optional Hold function for SPI flexibility

• Data Transfer up to 100M-bits / second

– Clock operation to 50MHz

– Fast Read Dual Output instruction

– Auto-increment Read capability

• Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read

– As few as 8 clocks to address memory

– Allows true XIP (execute in place) operation

• Software AND Hardware Write Protection

– Write-Protect all or portion of memory

– Enable/Disable protection WITH /WP pin

– Top or bottom array protection

– Volatile & Non-volatile Status Register Bits

• Flexible Architecture WITH 4KB sectors

– Sector Erase (4K-bytes)

– Block Erase (32K AND 64K-byte)

– Page program up to 256 bytes <1ms

– More than 100,000 erase/write cycles

– More than 20-year retention

• Low Power Consumption, Wide

Temperature Range

– Single 2.3 to 3.6V supply

– 4mA active current, 1µA Power-down (typ)

– -40° to +85°C operating range

• Space Efficient Packaging

– 8-pin SOIC 150-mil

– 8-pin SOIC 208-mil

– 8-pad WSON 6x5-mm

– 8-pin PDIP 300-mil


Part Name(s) : W25X10L W25X20L W25X40L W25X80L W25X10LSNE W25X10LSNEG W25X10LSSE W25X10LSSEG W25X10LZPE W25X10LZPEG Winbond
Winbond
Description : 1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT 2.5V SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI View

GENERAL DESCRIPTION
The W25X10L (1M-bit), W25X20L (2M-bit), W25X40L (4M-BIT) AND W25X80L (8M-bit) SERIAL FLASH MEMORIES provide a storage solution for systems WITH limited space, pins AND power. The 25X series offers flexibility AND performance well beyond ordinary SERIAL FLASH devices. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.5V ( a range of 2.3V to 3.3V) power supply WITH current consumption as low as 5mA active AND 1µA for power-down. All devices are offered in space-saving packages.
The W25X10L/20L/40L/80L array is organized into 512/1024/2048/4096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip (chip erase). The W25X10L/20L/40L/80L has 32/64/128/256 erasable sectors AND 2/4/8/16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data AND parameter storage. (See figure 2.)
The W25X10L/20L/40L/80L supports the stANDard SERIAL Peripheral INTERFACE (SPI), AND a high performance dual output SPI AND low voltage operation using four pins: SERIAL Clock, Chip Select, SERIAL Data I/O AND SERIAL Data Out. SPI clock frequencies of up to 40MHz are supported allowing equivalent clock rates of 80MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 AND 16-bit Parallel FLASH MEMORIES.
A Hold pin, Write Protect pin AND programmable write protect, WITH top or bottom array control features, provide further control flexibility. Additionally, the device supports JEDEC stANDard manufacturer AND device identification.

FEATURES
• Family of SERIAL FLASH MEMORIES
   – W25X10L: 1M-bit / 128K-byte (131,072)
   – W25X20L: 2M-bit / 256K-byte (262,144)
   – W25X40L: 4M-BIT / 512K-byte (524,288)
   – W25X80L: 8M-bit / 1M-byte (1,048,576)
   – 256-bytes per programmable page
   – Uniform 4K-byte Sectors / 64K-byte Blocks
SPI WITH Single or Dual Outputs
   – Clock, Chip Select, Data I/O, Data Out
   – Optional Hold function for SPI flexibility
• Data Transfer up to 80M-bits / second
   – Clock operation to 40MHz
   – Fast Read Dual Output instruction
   – Auto-increment Read capability
• Flexible Architecture WITH 4KB sectors
   – Sector Erase (4K-byte)
   – Block Erase (64K-byte)
   – Page program up to 256 bytes <2ms
   – Minimum 100,000 erase/write cycles
   – 20-year retention
• Low Power Consumption, Wide Temperature Range
   – Single 2.3 to 3.3V supply
   – 5mA active current, 1µA Power-down (typ)
   – 0° to +85°C operating range
• Software AND Hardware Write Protection
   – Write-Protect all or portion of memory
   – Enable/Disable protection WITH /WP pin
   – Top or bottom array protection
• Space Efficient Packaging
   – 8-pin SOIC 150-mil (W25X10L/20L/40L)
   – 8-pin SOIC 208-mil (W25X40L/80L)
   – 8-pin WSON 6x5-mm (W25X10L/20L/40L/80L)

Part Name(s) : NX25F011B NX25F021B NX25F041B NX25F011B-3V NX25F011B-3S NX25F011B-5V NX25F011B-5S NX25F021B-3V NX25F021B-3S NX25F021B-5V ETC
Unspecified
Description : 1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE View

[NexFLASH]

DESCRIPTION
The NX25F011B, NX25F021B, AND NX25F041B SERIAL FLASH MEMORIES provide a storage solution for systems limited in power, pins, space, hardware, AND firmware resources. They are ideal for applications that store voice, text, AND data in a portable or mobile environment. Using NexFLASHs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, AND cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read AND Erase/Write WITH typical current consumption as low as 2.5 mA active AND less than 1 µA stANDby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, AND maximize battery life.

FEATURES
FLASH Storage for Resource-Limited Systems
    – Ideal for portable/mobile AND microcontroller-based applications that store voice, text, AND data
• 0.35µ NexFLASHMemory Technology
    – 1M/2M/4M-BIT WITH 512/1024/2048 sectors
    – Small 264-byte sectors
    – Erase/Write time of 7.5 ms/sector (typical)
    – Optional 8KB (32 sector) block erase for faster programming
• Ultra-low Power for Battery-Operation
    – Single 5V or 3V supply for read AND erase/write
    – 1 mA stANDby current, 2.5 mA active @ 3V (typical)
    – Low frequency read commAND for lower power
4-PIN SPI SERIAL INTERFACE
    – Easily INTERFACEs to popular microcontrollers
    – Clock operation as fast as 20 MHz
• On-chip SERIAL SRAM
    – Single 264-byte Read/Write SRAM buffer
    – Use in conjunction WITH or independent of FLASH
    – Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
    – Byte-level addressing for reads AND SRAM writes
    – Transfer or compare sector to SRAM
    – Versatile hardware AND software write-protection
    – In-system electronic part number option
    – Removable SERIAL FLASH Module package option
    – SERIAL FLASH Development Kit


Part Name(s) : IS25F011A IS25F011A-3V-R IS25F011A-5V-R IS25F021A IS25F021A-3V-R IS25F021A-5V-R IS25F041A IS25F041A-3V-R IS25F041A-5V-R ISSI
Integrated Silicon Solution
Description : 1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE View

DESCRIPTION
The IS25F011A, IS25F021A, AND IS25F041A SERIAL FLASH MEMORIES provide a storage solution for systems limited in power, pins, space, hardware, AND firmware resources. They are ideal for applications that store voice, text, AND data in a portable or mobile environment. Using ISSIs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, AND cost-effective nonvolatile memory solution.

FEATURES
FLASH Storage for Resource-Limited Systems
    – Ideal for portable/mobile AND microcontroller-based applications that store voice, text, AND data
• NexFLASH TM SERIAL FLASH Memory
    – Patented single transistor EEPROM memory
    – High-density, low-voltage/power, cost-effective
    – Small 264-byte sectors
    – 10K/100K write cycles, ten years data retention
• Ultra-low Power for Battery-Operation
    – Single 5V or 3V supply for read AND erase/write
    – < 1 µA stANDby current, 5 mA active @ 3V (typical)
    – Low frequency read commAND for very low power
    – No pre-erase. Erase/Write time of 5 ms/sector @ 5V, ensures efficient battery use
4-PIN SPI SERIAL INTERFACE
    – Easily INTERFACEs to popular microcontrollers
    – Clock operation as fast as 16 MHz
• On-chip SERIAL SRAM
    – Dual 264-byte Read/Write SRAM buffers
    – Use in conjunction WITH or independent of FLASH
    – Off-loads RAM-limited microcontrollers
• Special Features for Media-Storage Applications
    – Byte-level addressing
    – Transfer or compare sector to SRAM
    – Versatile hardware AND software write-protection
    – Alternate oscillator frequency for EMI sensitive applications.
    – In-system electronic part number identification
    – Removable SERIAL FLASH Module package option
    – SFK-SPI SERIAL FLASH Development Kit

Part Name(s) : NX25P10 NX25P10-VNI NX25P10-VNI-C NX25P10-VNI-G NX25P10-VNI-T NX25P10-VPI NX25P10-VPI-C NX25P10-VPI-G NX25P10-VPI-T NX25P20 NexFlash
NexFlash -> Winbond Electronics
Description : 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH Memory WITH 40MHz SPI View

GENERAL DESCRIPTION
The NX25P10 (1M-bit), NX25P20 (2M-bit) AND NX25P40 (4M-BIT) SERIAL FLASH MEMORIES provide a storage solution for systems WITH limited space, pins AND power. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.7V to 3.6V power supply WITH current consumption as low as 4mA active AND 1µA for power-down. All devices are offered in space-saving 8-pin SOIC type packages as shown below. Contact NexFLASH for availability of alternate packages. As part of a family of SERIAL FLASH products, NexFLASH also provides a compatible migration path to 8M/ 16M/32M-bit densities.

FEATURES
• 1M / 2M / 4M-BIT SERIAL FLASH MEMORIES
• Family of SERIAL FLASH MEMORIES
    – NX25P10: 1M-bit / 128K-byte (131,072 ) 512 pages
    – NX25P20: 2M-bit / 256K-byte (262,144 ) 1024 pages
    – NX25P40: 4M-BIT / 512K-byte (524,288 ) 2048 pages
    – 256-bytes per programmable page
    – Compatible migration path to 8M/16M/32M-bit
4-PIN SPI SERIAL INTERFACE
    – Clock, Chip Select, Data In, Data Out
    – Easily INTERFACEs to popular microcontrollers
    – Compatible WITH SPI Modes 0 AND 3
    – Optional Hold function for SPI flexibility
• Low Power Consumption, Wide Temperature Range
    – Single 2.7 to 3.6V supply
    – 4mA active current, 1µA Power-down (typ)
    – -40° to +85°C operating range
• Fast AND Flexible SERIAL Data Access
    – Clock operation to 40MHz Fast Read, 33MHz StANDard Read
    – Byte-addressable Read AND Program
    – Auto-increment Read capability
    – Manufacturer AND Device ID
• Programming Features
    – Page program up to 256 bytes <2ms
    – Sector Erase (64K-byte) 2 seconds
    – Chip erase: 3 seconds (25P10/20), 5 seconds (25P40)
    – 100,000 erase/write cycles
    – Twenty year data retention
• Software AND Hardware Write Protection
    – Write-Protect all or portion of memory via software
    – Enable/Disable protection WITH WP pin
• Space Saving Package
    – Tiny 8-pin SOIC
• Ideal for systems WITH limited pins, space, AND power
    – ASIC AND Controller-based SERIAL code-download
    – Microcontroller systems storing data, text or voice
    – Battery-operated AND portable products

Part Name(s) : NX25P10 NX25P20 NX25P40 NX25P10-VNI NX25P10-VNI-G NX25P10-VNI-C NX25P10-VNI-T NX25P10-VPI NX25P10-VPI-G NX25P10-VPI-C ETC
Unspecified
Description : 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH Memory WITH 40MHz SPI View

[NexFLASH]

GENERAL DESCRIPTION
The NX25P10 (1M-bit), NX25P20 (2M-bit) AND NX25P40 (4M-BIT) SERIAL FLASH MEMORIES provide a storage solution for systems WITH limited space, pins AND power. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.7V to 3.6V power supply WITH current consumption as low as 4mA active AND 1µA for power-down. All devices are offered in space-saving 8-pin SOIC type packages as shown below. Contact NexFLASH for availability of alternate packages. As part of a family of SERIAL FLASH products, NexFLASH also provides a compatible migration path to 8M/ 16M/32M-bit densities.

FEATURES
• 1M / 2M / 4M-BIT SERIAL FLASH MEMORIES
• Family of SERIAL FLASH MEMORIES
    – NX25P10: 1M-bit / 128K-byte (131,072 ) 512 pages
    – NX25P20: 2M-bit / 256K-byte (262,144 ) 1024 pages
    – NX25P40: 4M-BIT / 512K-byte (524,288 ) 2048 pages
    – 256-bytes per programmable page
    – Compatible migration path to 8M/16M/32M-bit
4-PIN SPI SERIAL INTERFACE
    – Clock, Chip Select, Data In, Data Out
    – Easily INTERFACEs to popular microcontrollers
    – Compatible WITH SPI Modes 0 AND 3
    – Optional Hold function for SPI flexibility
• Low Power Consumption, Wide Temperature Range
    – Single 2.7 to 3.6V supply
    – 4mA active current, 1µA Power-down (typ)
    – -40° to +85°C operating range
• Fast AND Flexible SERIAL Data Access
    – Clock operation to 40MHz Fast Read, 33MHz StANDard Read
    – Byte-addressable Read AND Program
    – Auto-increment Read capability
    – Manufacturer AND Device ID
• Programming Features
    – Page program up to 256 bytes <2ms
    – Sector Erase (64K-byte) 2 seconds
    – Chip erase: 3 seconds (25P10/20), 5 seconds (25P40)
    – 100,000 erase/write cycles
    – Twenty year data retention
• Software AND Hardware Write Protection
    – Write-Protect all or portion of memory via software
    – Enable/Disable protection WITH WP pin
• Space Saving Package
    – Tiny 8-pin SOIC
• Ideal for systems WITH limited pins, space, AND power
    – ASIC AND Controller-based SERIAL code-download
    – Microcontroller systems storing data, text or voice
    – Battery-operated AND portable products

Part Name(s) : NX25F011B NX25F011B-3S NX25F011B-3S-R NX25F011B-3V NX25F011B-3V-R NX25F011B-5S NX25F011B-5S-R NX25F011B-5V NX25F011B-5V-R NX25F021B NexFlash
NexFlash -> Winbond Electronics
Description : 1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE View

DESCRIPTION

The NX25F011B, NX25F021B, AND NX25F041B SERIAL FLASH MEMORIES provide a storage solution for systems limited in power, pins, space, hardware, AND firmware resources. They are ideal for applications that store voice, text, AND data in a portable or mobile environment. Using NexFLASHs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, AND cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read AND Erase/Write WITH typical current consumption as low as 2.5 mA active AND less than 1 µA stANDby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, AND maximize battery life.



FEATURES

FLASH Storage for Resource-Limited Systems

   – Ideal for portable/mobile AND microcontroller-based applications that store voice, text, AND data

• 0.35µ NexFLASHMemory Technology

   – 1M/2M/4M-BIT WITH 512/1024/2048 sectors

   – Small 264-byte sectors

   – Erase/Write time of 7.5 ms/sector (typical)

   – Optional 8KB (32 sector) block erase for faster programming

• Ultra-low Power for Battery-Operation

   – Single 5V or 3V supply for read AND erase/write

   – 1 mA stANDby current, 2.5 mA active @ 3V (typical)

   – Low frequency read commAND for lower power

4-PIN SPI SERIAL INTERFACE

   – Easily INTERFACEs to popular microcontrollers

   – Clock operation as fast as 20 MHz

• On-chip SERIAL SRAM

   – Single 264-byte Read/Write SRAM buffer

   – Use in conjunction WITH or independent of FLASH

   – Off-loads RAM-limited microcontrollers

• Special Features for Media-Storage Applications

   – Byte-level addressing for reads AND SRAM writes

   – Transfer or compare sector to SRAM

   – Versatile hardware AND software write-protection

   – In-system electronic part number option

   – Removable SERIAL FLASH Module package option

   – SERIAL FLASH Development Kit



 


Part Name(s) : NX25P10 NX25P10-VNI NX25P10-VNI-G NX25P10-VNIG NX25P10-VSNI NX25P10-VSNI-G NX25P10-VSNIG NX25P20 NX25P20-VNI NX25P20-VNI-G Winbond
Winbond
Description : 1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI View

GENERAL DESCRIPTION

The W25P10 (1M-bit), W25P20 (2M-bit) AND W25P40 (4M-BIT) SERIAL FLASH MEMORIES provide a storage solution for systems WITH limited space, pins AND power. They are ideal for code download applications as well as storing voice, text AND data. The devices operate on a single 2.7V to 3.6V power supply WITH current consumption as low as 4mA active AND 1µA for power-down. All devices are offered in space-saving 8-pin SOIC type packagesas shown below. Contact Winbond for availability of alternate packages. As part of a family ofSERIAL FLASH products, Winbond also provides a compatible migration path to8M/16M/32M-bit densities.



FEATURES

• 1M / 2M / 4M-BIT SERIAL FLASH MEMORIES

• Family of SERIAL FLASH MEMORIES

    – W25P10: 1M-bit/128K-byte (131,072) 

    – W25P20: 2M-bit/256K-byte (262,144) 

    – W25P40: 4M-BIT/512K-byte (524,288) 

    – 256-bytes per programmable page

    – Migration path to 8M/16M/32M-bit

4-PIN SPI SERIAL INTERFACE

    – Clock, Chip Select, Data In, Data Out

    – Easily INTERFACEs to popular microcontrollers 

    – Compatible WITH SPI Modes 0 AND

    – Bottom Boot organization (stANDard)

    – Optional Hold function for SPI flexibility

• Low Power Consumption, Wide Temperature Range

    – Single 2.7 to 3.6V supply

    – 4mA active current, 1µA Power-down (typ)

    – -40° to +85°C operating range

• Fast AND Flexible SERIAL Data Access

    – 40MHz Fast Read, 33MHz StANDard Read

    – Byte-addressable Read AND Program

    – Auto-increment Read capability

    – Manufacturer AND Device ID

• Programming Features 

    – Page program up to 256 bytes <2ms

    – Sector Erase (64K-byte) 2 seconds

    – Chip erase: 3 seconds (25P10/20), 5 seconds (25P40)

    – 100,000 erase/write cycles

    – Twenty-year data retention 

• Software AND Hardware Write Protection 

    – Write-Protect all or portion of memory

    – Enable/Disable protection WITH /WP pin

• Space Saving Package

    – Tiny 8-pin SOIC 150mil

• Ideal for systems WITH limited pins, space, AND power

    – Controller-based SERIAL code-download 

    – µC systems storing data, text or voice

    – Battery-operated AND portable products


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