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Part Name(s) : NE13700 NE13783 NEC
NEC => Renesas Technology
Description : LOW NOISE KU-BAND GaAs MESFET View

LOW NOISE KU-BAND GaAs MESFET

Part Name(s) : NES1823P-100 NEC
NEC => Renesas Technology
Description : 100W L-BAND PUSH-PULL POWER GaAs MESFET View

DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high POWER transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 WATTs of output POWER with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• Push-pull type N-channel GaAs MESFET
• High Output POWER : 100 W TYP.
• High Linear Gain : 11.0 dB TYP.
• High Drain Efficiency: 50 % TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz

Part Name(s) : NE6500496 NE6500496_00 NEC
NEC => Renesas Technology
Description : L&S BAND MEDIUM POWER GaAs MESFET View

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION
The NE6500496 is POWER GaAs FET which provides high gain, high efficiency and high output POWER in L, S band.
To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.

FEATURES
• Class A operation
• High output POWER: 36 dBm (typ)
• High gain: 11.5 dB (typ)
• High POWER added efficiency: 45 % (typ)
• Hermetically sealed ceramic package

Part Name(s) : NE6500379A NE6500379A-T1 NE6500379 NEC
NEC => Renesas Technology
Description : 3W L, S-BAND POWER GaAs MESFET View

DESCRIPTION
The NE6500379A is a 3W GaAs MESFET designed for middle POWER transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 WATT of output POWER (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES
• High Output POWER : Po (1dB) = +35 dBm typ.
• High Linear Gain : 10 dB typ.
• High POWER Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz


Part Name(s) : CF005-01 Celeritek
Celeritek, Inc.
Description : Broadband POWER GaAs MESFET Chip View

Broadband POWER GaAs MESFET Chip

Part Name(s) : NE6501077_00 NE6501077 CEL
California Eastern Laboratories.
Description : L/S BAND MEDIUM POWER GaAs MESFET View

DESCRIPTION
The NE6501077 is a medium POWER GaAs MESFET designed for up to a 10 W output stage or as a driver for high POWER devices. The device has no internal matching and can be used from UHF frequencies up to 3.0 GHz. The chips used in this series offer superior reliability and consistent performance for which NEC microwave semiconductors are known.
The NE6501077 transistors are manufactured to NECs stringent quality assurance standards to ensure highest reliability and consistent superior performance.

FEATURES
• HIGH OUTPUT POWER: 10 W
• HIGH LINEAR GAIN: 10.5 dB
• HIGH EFFICIENCY: 40%
• INDUSTRY STANDARD PACKAGING

Part Name(s) : NE8500100 NE8500199 CEL
California Eastern Laboratories.
Description : C-BAND MEDIUM POWER GaAs MESFET View

DESCRIPTION
The NE8500199 is a medium POWER GaAs MESFET designed for up to a 1W output stage or as a driver for higher POWER devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form. The chip is a two cell die; bonding both cells delivers the rated performance.
The NE850 Series Transistors are manufactured to NECs stringent quality assurance standards to ensure highest reliability and consistent superior performance.

FEATURES
• HIGH OUTPUT POWER: 1 W
• HIGH LINEAR GAIN: 9.0 dB
• HIGH EFFICIENCY: 37% (PAE)
• INDUSTRY STANDARD PACKAGING
• THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100

Part Name(s) : CLY29 CLY29-00 CLY29-05 CLY29-10 CLY29-10ES CLY29-10S Q62702L116 Q62702L117 Infineon
Infineon Technologies
Description : HiRel C-BAND GaAs POWER-MESFET View

HiRelC-BAND GaAs POWER-MESFET



• HiRelDiscrete and Microwave Semiconductor

• For professional POWER amplifiers

• For frequencies from 100 MHz to 8 GHz

• Hermetically sealed microwave POWER package

• Low thermal resistance for high voltage application

POWER added efficiency > 55 %

• eesa Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5614/006, Type Variant No.s 04 to 06



 


Part Name(s) : AFM06P2-000 Alpha
Alpha Industries
Description : Ka Band POWER GaAs MESFET Chip View

Description
The AFM06P2-000 is a high performance POWER GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 600 µm. The device has excellent gain and POWER performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.

Features
■ 22.5 dBm Output POWER @ 18 GHz
■ High Associated Gain, 9 dB @ 18 GHz
■ High POWER Added Efficiency, 23%
■ Broadband Operation, DC–40 GHz
■ 0.25 µm Ti/Pd/Au Gates
■ Passivated Surface
■ Through-Substrate Via Hole Grounding

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