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Part Name(s) : AA022N1-00 Alpha
Alpha Industries
Description : 21–24 GHz GaAs MMIC Low Noise Amplifier View

Description
Alpha’s three-stage reactively-matched 21–24 GHz MMIC Low Noise Amplifier has typical small signal gain of 19 dB with a typical Noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm Low Noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Features
■ Single Bias Supply Operation (4.5 V)
■ 2.6 dB Typical Noise Figure at 23 GHz
■ 19 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure Testing
■ 100% Visual Inspection to MIL-STD-883 MT 2010

Part Name(s) : AA028N1-00 Alpha
Alpha Industries
Description : 24–30 GHz GaAs MMIC Low Noise Amplifier View

Description
Alpha’s three-stage reactively-matched 24–30 GHz MMIC Low Noise Amplifier has typical small signal gain of 17 dB with a typical Noise figure of 3.0 dB at 28 GHz. The chip uses Alpha’s proven 0.25 µm Low Noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Features
■ Single Bias Supply Operation (4.5 V)
■ 3.0 dB Typical Noise Figure at 28 GHz
■ 17 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure Testing
■ 100% Visual Inspection to MIL-STD-883 MT 2010

Part Name(s) : AA022N1-00 Skyworks
Skyworks Solutions
Description : 21–24 GHz GaAs MMIC Low Noise Amplifier View

Description
Skyworks’ three-stage reactively-matched 21–24 GHz MMIC Low Noise Amplifier has typical small signal gain of 19 dB with a typical Noise figure of 2.6 dB at 23 GHz. The chip uses Skyworks’ proven 0.25 µm Low Noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Features
■ Single Bias Supply Operation (4.5 V)
■ 2.6 dB Typical Noise Figure at 23 GHz
■ 19 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure Testing
■ 100% Visual Inspection to MIL-STD-883 MT 2010

Part Name(s) : HMC263LP4_09 Hittite
Hittite Microwave
Description : GaAs MMIC Low Noise Amplifier, 24 - 36 GHz View

General Description
The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a Noise f gure of 2.2 dB. The HMC263LP4E may be used in conjunction with HMC264LC3B or HMC265LM3 mixers to realize a millimeterwave system receiver. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components.

Features
   Low Noise Figure: 2.2 dB
   High Gain: 20 dB
   Single Positive Supply: +3V or +5V
   DC Blocked RF I/Os
   No External Matching
   24 Lead 4x4mm QFN Package: 16mm2

Typical Applications
   The HMC263LP4E is ideal for:
   • Millimeterwave Point-to-Point Radios
   • LMDS
   • VSAT
   • SATCOM


Part Name(s) : HMC263LP4E ADI
Analog Devices
Description : GaAs MMIC Low Noise Amplifier, 24 - 36 GHz View

General Description
The HMC263LP4E is a GaAs MMIC Low Noise Amplif er (LNA) which covers the frequency range of 24 to 36 GHz and is housed in a leadless plastic SMT package. The HMC263LP4E utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3V @ 58 mA with a Noise f gure of 2.2 dB. The HMC263LP4E may be used in conjunction with HMC264LC3B or HMC265LM3 mixers to realize a millimeterwave system receiver. The RF I/Os are DC blocked and matched to 50 Ohms requiring no external components.

Features
   Low Noise Figure: 2.2 dB
   High Gain: 20 dB
   Single Positive Supply: +3V or +5V
   DC Blocked RF I/Os
   No External Matching
   24 Lead 4x4mm QFN Package: 16mm2

Typical Applications
   The HMC263LP4E is ideal for:
   • Millimeterwave Point-to-Point Radios
   • LMDS
   • VSAT
   • SATCOM

Part Name(s) : TLA-8-2014 TELEDYNE
Teledyne Technologies Incorporated
Description : Low Noise Amplifier 2 GHz - 8 GHz View

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.

Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

This Low Noise Amplifier offers Low Noise figure performance of 2.5 dB over the band 2 GHz to 8 GHz with 38 dB Gain.



 


Part Name(s) : TLA-8-2015 TELEDYNE
Teledyne Technologies Incorporated
Description : Low Noise Amplifier 2 GHz - 8 GHz View

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.

Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

This Low Noise Amplifier offers Low Noise figure performance of 2.5 dB over the band 2 GHz to 8 GHz with 48 dB Gain.



 


Part Name(s) : HMC262 HMC262 Hittite
Hittite Microwave
Description : GaAs MMIC Low Noise Amplifier, 15 - 24 GHz View

General Description
The HMC262 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 15 to 24 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.75 mm2) size. The chip utilizes a GaAs PHEMT process offering 25 dB gain from a single bias supply of + 3V @ 36 mA with a Noise figure of 2 dB. This LNA can be used in microwave & millimeter wave point-to-point radios, VSAT, and other SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). The HMC262 may be used in conjunction with HMC203, HMC258, HMC264, or HMC265 mixers to realize a microwave or millimeterwave system receiver.

Features
    EXCELLENT Noise FIGURE : 2 dB
    STABLE GAIN VS TEMPERATURE: 25 dB ±1.5 dB
    SINGLE SUPPLY : +3V@ 36mA
    SMALL SIZE: 1.32 mm x 2.08 mm

Part Name(s) : XL1003-BD XL1003-BD-000V XL1003-BD-000W XL1003-BD-EV1 MIMIX
Mimix Broadband
Description : 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier View

General Description

Mimix Broadband’s three stage output balanced 24.0-40.0 GHz GaAs MMIC Low Noise Amplifier has a small signal gain of 24.0 dB with a Noise figure of 1.7 dB across the band. This MMIC uses Mimix Broadband’s 0.1 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to alLow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.



Features

■ Balanced Output Stage

■ Excellent Input/Output Match

■ Self-biased Architecture

■ 24.0 dB Small Signal Gain

■ 1.7 dB Noise Figure

■ 100% On-Wafer RF, DC and Noise Figure Testing

■ 100% Visual Inspection to MIL-STD-883 Method 2010



 


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