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Part Name(s) : ZXT10N20DE6 ZXT10N20DE6TA Diodes
Diodes Incorporated.
Description : 20V NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26 View

Features

• BVCEO > 20V

• IC = 3.5A ContINuous Collector Current

• ICM = 19A Peak Pulse Current

• RCE(SAT) = 55mΩ for a LOW Equivalent On-Resistance

LOW SATURATION Voltage (90mV max @ 1A)

• hFE Characterized up to 6A

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability



Applications

• DC–DC Converters

• Power Management Functions

• Power Switches

• Motor Control



 


Part Name(s) : ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC Diodes
Diodes Incorporated.
Description : 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 View

DESCRIPTION
This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.

FEATURES
LOW Equivalent On Resistance
• Extremely LOW SATURATION Voltage
• hFE characterised up to 6A
• IC=2.5A ContINuous Collector Current
• SOT23-6 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Part Name(s) : ZXT13P20DE6 ZXT13P20DE6TA ZXT13P20DE6TC Zetex
Zetex => Diodes
Description : SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR View

SUMMARY

VCEO=-20V; RSAT = 47m ; IC= -3.5A



DESCRIPTION

This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.



FEATURES

• Extremely LOW Equivalent On Resistance

• Extremely LOW SATURATION Voltage

• hFE characterised up to 10A

• IC=3.5A ContINuous Collector Current

• SOT23-6 package



APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control



 


Part Name(s) : ZXT13P20DE6 ZXT13P20DE6TA ZXT13P20DE6TC Diodes
Diodes Incorporated.
Description : SuperSOT4™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR View

SUMMARY

VCEO=-20V; RSAT = 47m ; IC= -3.5A



DESCRIPTION

This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.



FEATURES

• Extremely LOW Equivalent On Resistance

• Extremely LOW SATURATION Voltage

• hFE characterised up to 10A

• IC=3.5A ContINuous Collector Current

• SOT23-6 package



APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control



 



Part Name(s) : ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC T14P20DX Zetex
Zetex => Diodes
Description : 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR View

DESCRIPTION
This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.

FEATURES
• Extremely LOW Equivalent On Resistance
• Extremely LOW SATURATION Voltage
• hFE characterised up to 15A
• IC=5A ContINuous Collector Current
• MSOP8 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Part Name(s) : ZXT14P20DX ZXT14P20DXTA ZXT14P20DXTC T14P20DX Diodes
Diodes Incorporated.
Description : 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR View

DESCRIPTION
This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.

FEATURES
• Extremely LOW Equivalent On Resistance
• Extremely LOW SATURATION Voltage
• hFE characterised up to 15A
• IC=5A ContINuous Collector Current
• MSOP8 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

Part Name(s) : ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC Zetex
Zetex => Diodes
Description : SuperSOT™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR View

SUMMARY

VCEO=20V; RSAT = 55m ; IC= 3.5A



DESCRIPTION

This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.



FEATURES

LOW Equivalent On Resistance

• Extremely LOW SATURATION Voltage

• hFE characterised up to 12A

• IC=3.5A ContINuous Collector Current

• SOT23-6 package



APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control



 


Part Name(s) : ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6QTA Diodes
Diodes Incorporated.
Description : COMPLEMENTARY 15V NPN & 12V PNP LOW SATURATION TRANSISTORS IN SOT26 View

DESCRIPTION
This new combINation device comprises a complementary NPN and PNP LOW SATURATION TRANSISTOR housed IN the SOT23-6 package. Users benefit from very efficient performance combININg a high current operation, exceptionally LOW VCE(sat) and high HFE resultINg IN extremely LOW on state losses. This dual TRANSISTOR is ideal for use IN a variety of efficient drivINg functions INcludINg motors, lamps, relays and solenoids and will also benefit circuits requirINg high output current SWITCHING.

FEATURES
LOW SATURATION Voltage
• RCE(sat) values NPN =135mΩ at 1.5A - PNP =150mΩ at 1.25A
• hFE mIN 200 at 1A
• IC=1.5A ContINuous (NPN), 1.25A (PNP)
• SOT23-6 package with PD = 1.1W

APPLICATIONS
• Various drivINg functions Lamps Motors Relays and solenoids
• High output current switches

Part Name(s) : T12N20DX ZXT12N20DX ZXT12N20DXTA ZXT12N20DXTC Diodes
Diodes Incorporated.
Description : DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR View

SUMMARY
VCEO=20V; RSAT = 40mΩ; IC= 3.5A

DESCRIPTION
This new 4th generation ultra LOW SATURATION TRANSISTOR utilises the Zetex matrix structure combINed with advanced assembly techniques to give extremely LOW on state losses. This makes it ideal for high efficiency, LOW voltage SWITCHING applications.

FEATURES
• Extremely LOW Equivalent On Resistance
• Extremely LOW SATURATION Voltage
• hFE characterised up to 10A
• IC=3.5A ContINuous Collector Current
• MSOP8 package

APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Power switches
• Motor control

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