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Part Name(s) : IDT71028S17Y IDT
Integrated Device Technology
Description : CMOS Static RAM 1 meg (256K x 4-bit) View

DESCRIPTION:

The IDT71028 is a 1,048,576-bit high-speed Static RAM organized as 256K x 4. It is fabricated using IDT’s high perfomance, high-reliability CMOS technology. This state-of the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.



FEATURES:

256K x 4 advanced high-speed CMOS Static RAM

• Equal access and cycle times

  — Commercial: 12/15/17/20ns

• One Chip Select plus one Output Enable pin

• Bidirectional data Inputs and outputs directly TTL-compatible

• Low power consumption via chip deselect

• Available in 400 mil Plastic SOJ package


Part Name(s) : IDT71028 IDT71028S12Y IDT71028S12YI IDT71028S15Y IDT71028S15YI IDT71028S20Y IDT71028S20YI IDT
Integrated Device Technology
Description : CMOS Static RAM 1 Meg (256K x 4-Bit) View

Description

The IDT71028 is a 1,048,576-bit high-speed Static RAM organized as 256K x 4. It is fabricated using IDT’s high-perfomance, high reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost effective solution for high-speed memory needs.



Features

256K x 4 advanced high-speed CMOS Static RAM

◆ Equal access and cycle times

    — Commercial and Industrial: 12/15/20ns

◆One Chip Select plus one Output Enable pin

◆ Bidirectional data inputs and outputs directly TTL-compatible

◆ Low power consumption via chip deselect

◆ Available in 400 mil Plastic SOJ package.


Part Name(s) : IDT7MP4045 IDT7MP4045S15M IDT7MP4045S15Z IDT7MP4045S20M IDT7MP4045S20Z IDT7MP4145 IDT7MP4145S15M IDT7MP4145S15Z IDT7MP4145S20M IDT7MP4145S20Z IDT
Integrated Device Technology
Description : 256K x 32 CMOS Static RAM MODULE View

DESCRIPTION:
The IDT7MP4045/4145 is a 256K x 32 Static RAM module constructed on an epoxy laminate (FR-4) substrate using 8 256K x 4 Static RAMs in plastic SOJ packages. Availability of four chip select lines (one for each group of two RAMs) provides byte access. The IDT7MP4045 is available with access time as fast as 10ns with minimal power consumption.

FEATURES:
• High density 1 megabyte Static RAM module (IDT7MP4145 upgradeable to 4 megabyte, IDT7MP4120)
• Low profile 64 pin ZIP (Zig-zag In-line vertical Package) or 64 pin SIMM (Single In-line Memory Module) for IDT7MP4045 and 72 pin SIMM (Single In-line Memory Module) for IDT7MP4145
• Very fast access time: 15ns (max.)
• Surface mounted plastic components on an epoxy laminate (FR-4) substrate
• Single 5V (±10%) power supply
• Multiple GND pins and decoupling capacitors for maximum noise immunity
• Inputs/outputs directly TTL-compatible

Part Name(s) : 71V416 IDT71V416 IDT71V41612Y IDT71V41615Y IDT71V41620Y ETC
Unspecified
Description : 3.3V CMOS Static RAM 4 MEG (256K x 16-BIT) View

[Integrated Device Technology, Inc.]



DESCRIPTION:

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high perfomance, high-reliability CMOS technology. This state-of the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71V416 are TTL compatible and operation is from a single 3.3V supply. Fully Static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The IDT71V416 is packaged in a 44-pin, 400mil Plastic SOJ.



FEATURES:

256K x 16 advanced high-speed CMOS Static RAM

• JEDEC Center Power /GND pinout for reduced noise

• Equal access and cycle times

   — 12/15/20ns

• Single 3.3V power supply

• One Chip Select plus one Output Enable pin

• Bidirectional data inputs and outputs directly TTL-compatible

• Low power consumption via chip deselect

• Upper and Lower Byte Enable Pins

• Available in 44-pin, 400 mil plastic SOJ package



 



Part Name(s) : 71V416 IDT71V416 IDT71V416S12Y IDT71V416S15Y IDT71V416S20Y IDT
Integrated Device Technology
Description : 3.3V CMOS Static RAM 4 MEG (256K x 16-BIT) View

DESCRIPTION:

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized as 256K x 16. It is fabricated using IDT’s high perfomance, high-reliability CMOS technology. This state-of the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for high-speed memory needs.

The IDT71V416 has an output enable pin which operates as fast as 6ns, with address access times as fast as 12ns. All bidirectional inputs and outputs of the IDT71V416 are TTL compatible and operation is from a single 3.3V supply. Fully Static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The IDT71V416 is packaged in a 44-pin, 400mil Plastic SOJ.



FEATURES:

256K x 16 advanced high-speed CMOS Static RAM

• JEDEC Center Power /GND pinout for reduced noise

• Equal access and cycle times

   — 12/15/20ns

• Single 3.3V power supply

• One Chip Select plus one Output Enable pin

• Bidirectional data inputs and outputs directly TTL-compatible

• Low power consumption via chip deselect

• Upper and Lower Byte Enable Pins

• Available in 44-pin, 400 mil plastic SOJ package



 


Part Name(s) : MCM63Z736 MCM63Z818 MCM63Z736TQ133 MCM63Z736TQ100 MCM63Z736TQ133R MCM63Z736TQ100R MCM63Z818TQ133 MCM63Z818TQ100 MCM63Z818TQ133R MCM63Z818TQ100R Motorola
Motorola => Freescale
Description : 128K x 36 and 256K x 18 Bit Pipelined ZBT™ RAM Synchronous Fast Static RAM View

The ZBT RAM is a 4M–bit synchronous fast Static RAM designed to provide zero bus turnaround. The ZBT RAM allows 100% use of bus cycles during back–to–back read/write and write/read cycles. The MCM63Z736 is organized as 128K words of 36 bits each and the MCM63Z818 is organized as 256K words of 18 bits each, fabricated with high performance silicon gate CMOS technology. This device integrates input registers, an output register, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in communication applications. Synchronous design allows precise cycle control with the use of an external clock (CK). CMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability.

• 3.3 V LVTTL and LVCMOS Compatible
• MCM63Z736/MCM63Z818–133 = 4.2 ns Access/7.5 ns Cycle (133 MHz)
    MCM63Z736/MCM63Z818–100 = 5 ns Access/10 ns Cycle (100 MHz)
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Internally Self–Timed Write Cycle
• Two–Cycle Deselect
• Byte Write Control
• ADV Controlled Burst
• 100–Pin TQFP Package

Part Name(s) : CY7C197D CY7C197D-10PXC CY7C197D-10PXI CY7C197D-10VXC CY7C197D-10VXI CY7C197D-12PXC CY7C197D-12PXI CY7C197D-12VXC CY7C197D-12VXI CY7C197D-15PXC Cypress
Cypress Semiconductor
Description : 256K (256K x 1) Static RAM View

Functional Description[1]
The CY7C197D is a high-performance CMOS Static RAM organized as 256K words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C197D has an automatic power-down feature, reducing the power consumption when deselected.

Features
• Pin- and function-compatible with CY7C197B
• High speed
    — tAA = 10 ns
• CMOS for optimum speed/power
• Low active power
    — ICC = 60 mA @ 10 ns
• Low CMOS standby power
    — ISB2 = 3 mA
• TTL-compatible inputs and outputs
• Data retention at 2.0V
• Automatic power-down when deselected
• Available in Pb-Free Packages

Part Name(s) : IDT61298SA IDT61298SA12Y IDT61298SA15Y IDT
Integrated Device Technology
Description : CMOS Static RAM 256K (64K x 4-BIT) View

DESCRIPTION:
The lDT61298SA is a 262,144-bit high-speed Static RAM organized as 64K x 4. It is fabricated using IDT’s high-performance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design echniques, provides a cost-effective approach for memory ntensive applications.

FEATURES:
• 64K x 4 high-speed Static RAM
• Fast Output Enable (OE) pin available for added system flexibility
• High speed (equal access and cycle times)
    — Commercial: 12/15 ns (max.)
• JEDEC standard pinout
• 300 mil 28-pin SOJ
• Produced with advanced CMOS technology
• Bidirectional data inputs and outputs
• Inputs/Outputs TTL-compatible
• Three-state outputs
• Military product compliant to MIL-STD-883, Class B

Part Name(s) : MCM69L817 MCM69L817ZP6 MCM69L817ZP6.5 MCM69L817ZP7 MCM69L817ZP6R MCM69L817ZP6.5R MCM69L817ZP7R Motorola
Motorola => Freescale
Description : 256K x 18 Bit Data Latch BurstRAM™ Synchronous Fast Static RAM View

The MCM69L817 is a 4M bit synchronous fast Static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC and other high performance microprocessors. It is organized as 256K words of 18 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K).

• MCM69L817 Speed Options
• 3.3 V + 10%, – 5% Core Power Supply, Operates with a 3.3 V or 2.5 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• PB1 Version 2.0 Compatible
• JEDEC Standard 119–Pin PBGA Package

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