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Part Name(s) : AM29LV004B-1 AMD
Advanced Micro Devices
Description : 4 MegaBit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

GENERAL DESCRIPTION
The Am29LV004B is an 4 MBit, 3.0 volt-only Flash Memory organized as 524,288 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
    — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
    — Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
    — Compatible with 0.5 µm Am29LV004 device
■ High performance
    — Full voltage range: access times as fast as 80 ns
    — Regulated voltage range: access times as fast as 70 ns
■ Ultra low power consumption (typical values at 5 MHz)
    — 200 nA Automatic Sleep mode current
    — 200 nA standby mode current
    — 7 mA read current
    — 15 mA program/erase current
■ Flexible Sector architecture
    — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte Sectors
    — Supports full chip erase
    — Sector Protection features:
        A hardware method of locking a Sector to prevent any program or erase operations within that Sector
        Sectors can be locked in-system or via programming equipment
        Temporary Sector Unprotect feature allows code changes in previously locked Sectors
■ Unlock Bypass Program Command
    — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
    — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated Sectors
    — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per Sector
■ Package option
    — 40-pin TSOP
■ Compatibility with JEDEC standards
    — Pinout and software compatible with singlepower supply Flash
    — Superior inadvertent write protection
■ Data# Polling and toggle Bits
    — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
    — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
    — Suspends an erase operation to read data from, or program data to, a Sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
    — Hardware method to reset the device to reading array data

Part Name(s) : AM29LV200 AM29LV200B AMD
Advanced Micro Devices
Description : 2 MegaBit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 volt-only Boot Sector Flash Memory View

The Am29LV200 is a 2 MBit, 3.0 volt-only Flash Memory organized as 262,144 bytes or 131,072 words. The device is offered in 44-pin SO and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.



This device is designed to be programmed in system using only a single 3.0 volt VCCsupply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : AM29F160D AM29F160DB AM29F160DB120 AM29F160DB75 AM29F160DB90 AM29F160DT AM29F160DT120 AM29F160DT75 AM29F160DT90 AM29F160DT75EC AMD
Advanced Micro Devices
Description : 16 MegaBit (2 M x 8-Bit/1 M x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory View

GENERAL DESCRIPTION
The Am29F160D is a 16 MBit, 5.0 Volt-only Flash Memory device organized as 2,097,152 bytes or 1,048,576 words. Data appears on DQ0-DQ7 or DQ0-DQ15 depending on the data width selected. The device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
5.0 Volt single power supply operation
   — Minimizes system-level power requirements
■ High performance
   — Access times as fast as 70 ns
■ Manufactured on 0.25 µm process technology
■ CFI (Common Flash Interface) compliant
   — Provides device-specific information to the
      system, allowing host software to easily
      reconfigure for different Flash devices
■ Ultra low power consumption (typical values at 5 MHz)
   — 15 mA typical active read current
   — 35 mA typical erase/program current
   — 300 nA typical standby mode current
■ Flexible Sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
      thirty-one 64 Kbyte Sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and
      thirty-one 32 Kword Sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
   — Hardware method of locking a Sector to prevent
      program or erase operations within that Sector
   — Sectors can be locked in-system or via
      programming equipment
   — Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Top Boot or bottom Boot configurations available
■ Minimum 1,000,000 write cycle guarantee per Sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package options
   — 48-pin TSOP (Continue ...)

Part Name(s) : EN29LV800 EN29LV800T70RT EN29LV800T70RTP EN29LV800T70RTI EN29LV800T70RTIP EN29LV800T70RS EN29LV800T70RSP EN29LV800T70RSI EN29LV800T70RSIP EN29LV800T90T Eon
Eon Silicon Solution Inc.
Description : 8 MegaBit (1024K x 8-Bit / 512K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only View

GENERAL DESCRIPTION
The EN29LV800 is an 8-MegaBit, electrically erasable, read/write non-volatile Flash Memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• Single power supply operation
    - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
    - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
• Manufactured on 0.28 µm process technology
• High performance
    - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
    - 7 mA typical active read current
    - 15 mA typical program/erase current
    - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
    - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte Sectors (byte mode)
    - One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword Sectors (word mode)
    - Supports full chip erase
    - Individual Sector erase supported
    - Sector protection: Hardware locking of Sectors to prevent program or erase operations within individual Sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.
• High performance program/erase speed
    - Byte/Word program time: 8µs typical
    - Sector erase time: 5.0ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle Bits feature
• Single Sector and Chip Erase
Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
• 0.28 µm double-metal double-poly triple-well CMOS Flash Technology
• Low Vcc write inhiBit < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range


Part Name(s) : EN29LV160C EN29LV160CB-70BIP EN29LV160CB-70TIP EN29LV160CT-70BIP EN29LV160CT-70TIP Eon
Eon Silicon Solution Inc.
Description : 16 MegaBit (2048K x 8-Bit / 1024K x 16-Bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only View

GENERAL DESCRIPTION

The EN29LV160C is a 16-MegaBit, electrically erasable, read/write non-volatile Flash Memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160C features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV160C has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.



FEATURES

• 3.0V, single power supply operation

   - Minimizes system level power requirements

• High performance

   - Access times as fast as 70 ns

• Low power consumption (typical values at 5 MHz)

   - 9 mA typical active read current

   - 20 mA typical program/erase current

   - Less than 1 μA standby current

• Flexible Sector Architecture:

   - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and thirty-one 64-Kbyte Sectors (byte mode)

   - One 8-Kword, two 4-Kword, one 16-Kword and thirty-one 32-Kword Sectors (word mode)

Sector protection :

   - Hardware locking of Sectors to prevent program or erase operations within individual Sectors

   - Additionally, temporary Sector Group Unprotect allows code changes in previously locked Sectors.

• Secured Silicon Sector

   - Provides a 128-words area for code or data that can be permanently protected.

   - Once this Sector is protected, it is prohiBited to program or erase within the Sector again.

• High performance program/erase speed

   - Byte/Word program time: 8µs typical

   - Sector erase time: 100ms typical

   - Chip erase time: 4s typical

• JEDEC Standard program and erase commands

• JEDEC standard DATA# polling and toggle Bits feature

• Single Sector and Chip Erase

Sector Unprotect Mode

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes: Read and program another Sector during Erase Suspend Mode

• Triple-metal double-poly triple-well CMOS Flash Technology

• Low Vcc write inhiBit < 2.5V

• minimum 100K program/erase endurance cycle

• Package Options

   - 48-pin TSOP (Type 1)

   - 48 ball 6mm x 8mm TFBGA

• Industrial Temperature Range



 


Part Name(s) : S29AL016 S29AL016D S29AL016D70TAI010 S29AL016D70TAI011 S29AL016D70TFI012 S29AL016D70TFI013 Spansion
Spansion Inc.
Description : 16 MegaBit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory View

The S29AL016D is a 16 MBit, 3.0 Volt-only Flash Memory organized as 2,097,152 bytes or 1,048,576 words.







The device is offered in 48-ball FBGA, and 48-pinTSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in system with the standard system 3.0 volt VCCsupply. A 12.0 V VPPor 5.0 VCCare not required for write or erase operations. The device can also be programmed in standard EPROM programmers.


Part Name(s) : AT29LV040A-20TC AT29LV040A-20TI AT29LV040A-25TC AT29LV040A-25TI Atmel
Atmel Corporation
Description : 4 MegaBit (512K x 8) 3-volt Only 256 Byte Sector CMOS Flash Memory View

Description
The AT29LV040A is a 3-volt-only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megaBits of Memory is organized as 524,288 words by 8 Bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times up to 200 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 20 µA. The device endurance is such that any Sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 3-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29LV040A does not require high input voltages for programming. Three-volt-only commands determine the operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29LV040A is performed on a Sector basis; 256-bytes of data are loaded into the device and then simultaneously programmed.

Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-Volt-Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 200 ns
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
Sector Program Operation
   Single Cycle Reprogram (Erase and Program)
   2048 Sectors (256 bytes/Sector)
   Internal Address and Data Latches for 256-Bytes
• Two 16 KB Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

Part Name(s) : A29800B A29800BTG-55F A29800BTG-55UF A29800BTV-55F A29800BTV-55UF A29800BUV-55F A29800BUV-55UF A29800BUG-55F A29800BUG-55UF AMIC
AMIC Technology
Description : 1M X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory View

General Description
The A29800B is an 8MBit, 5.0 volt-only Flash Memory organized as 1,048,576 bytes of 8 Bits or 524,288 words of 16 Bits each. The 8 Bits of data appear on I/O0 - I/O7; the 16 Bits of data appear on I/O0~I/O15. The is offered in 48-ball FBGA and 48-Pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29800B can also be programmed in standard EPROM programmers.
The A29800B has the first toggle Bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle Bit, the A29800B has a second toggle Bit, I/O2, to indicate whether the addressed Sector is being selected for erase. The A29800B also offers the ability to program in the Erase Suspend mode. The standard A29800B offers access time of 55ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable ( CE ), write enable ( WE ) and output enable (OE ) controls.

Features
■ Single power supply operation
- Full voltage range: 4.5 to 5.5 volt for read and write operations
■ Access time:
   - 55ns (max.)
■ Current:
   - 20 mA typical active read current
   - 30 mA typical program/erase current
   - 6μA typical CMOS standby
■ Flexible Sector architecture
   - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 Sectors
   - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 Sectors
   - Any combination of Sectors can be erased
   - Supports full chip erase
   - Sector protection:
      A hardware method of protecting Sectors to prevent any
      inadvertent program or erase operations within that
      Sector. Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Industrial operating temperature range: -40ºC to +85ºC for -U series
■ Unlock Bypass Program Command
   - Reduces overall programming time when issuing
      multiple program command sequence
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
   - Embedded Erase algorithm will automatically erase the
      entire chip or any combination of designated Sectors and
      verify the erased Sectors
   - Embedded Program algorithm automatically writes and
      verifies data at specified addresses
■ Minimum 100,000 program/erase cycles per Sector
■ 20-year data retention at 125ºC
   - Reliable operation for the life of the system
■ Compatible with JEDEC-standards
   - Pinout and software compatible with single-power-supply
      Flash Memory standard
   - Superior inadvertent write protection
■ Data Polling and toggle Bits
   - Provides a software method of detecting completion of
      program or erase operations
■ Ready / BUSY pin (RY / BY )
   - Provides a hardware method of detecting completion of
      program or erase operations
■ Erase Suspend/Erase Resume
   - Suspends a Sector erase operation to read data from, or
      program data to, a non-erasing Sector, then resumes the
      erase operation
■ Hardware reset pin (RESET )
- Hardware method to reset the device to reading array data
■ Package options
   - 48-pin TSOP (I) or 48-ball TFBGA
   - All Pb-free (Lead-free) products are RoHS2.0 compliant

Part Name(s) : A29800A A29800ATG-55F A29800ATG-55UF A29800ATV-55F A29800ATV-55UF A29800AUV-55F A29800AUV-55UF A29800AUG-55F A29800AUG-55UF AMIC
AMIC Technology
Description : 1M X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory View

General Description
The A29800A is an 8MBit, 5.0 volt-only Flash Memory organized as 1,048,576 bytes of 8 Bits or 524,288 words of 16 Bits each. The 8 Bits of data appear on I/O0 - I/O7; the 16 Bits of data appear on I/O0~I/O15. The is offered in 48-ball FBGA and 48-Pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29800A can also be programmed in standard EPROM programmers.
The A29800A has the first toggle Bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle Bit, the A29800A has a second toggle Bit, I/O2, to indicate whether the addressed Sector is being selected for erase. The A29800A also offers the ability to program in the Erase Suspend mode. The standard A29800A offers access time of 55ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable ( CE ), write enable ( WE ) and output enable (OE ) controls.

Features
■ Single power supply operation
   - Full voltage range: 4.5 to 5.5 volt for read and write operations
■ Access time:
   - 55ns (max.)
■ Current:
   - 20 mA typical active read current
   - 30 mA typical program/erase current
   - 6μA typical CMOS standby
■ Flexible Sector architecture
   - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 Sectors
   - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 Sectors
   - Any combination of Sectors can be erased
   - Supports full chip erase
   - Sector protection:
      A hardware method of protecting Sectors to prevent any
      inadvertent program or erase operations within that
      Sector. Temporary Sector Unprotect feature allows code
      changes in previously locked Sectors
■ Industrial operating temperature range: -40ºC to +85ºC for
   -U series
■ Unlock Bypass Program Command
   - Reduces overall programming time when issuing multiple program command sequence
■ Top or bottom Boot block configurations available
■ Embedded Algorithms
   - Embedded Erase algorithm will automatically erase the
      entire chip or any combination of designated Sectors and
      verify the erased Sectors
   - Embedded Program algorithm automatically writes and
      verifies data at specified addresses
■ Minimum 100,000 program/erase cycles per Sector
■ 20-year data retention at 125ºC
   - Reliable operation for the life of the system
■ Compatible with JEDEC-standards
   - Pinout and software compatible with single-power-supply
      Flash Memory standard
   - Superior inadvertent write protection
■ Data Polling and toggle Bits
   - Provides a software method of detecting completion of
      program or erase operations
■ Ready / BUSY pin (RY / BY )
   - Provides a hardware method of detecting completion of
      program or erase operations
■ Erase Suspend/Erase Resume
   - Suspends a Sector erase operation to read data from, or
      program data to, a non-erasing Sector, then resumes the
      erase operation
■ Hardware reset pin (RESET )
   - Hardware method to reset the device to reading array data
■ Package options
   - 48-pin TSOP (I) or 48-ball TFBGA
   - All Pb-free (Lead-free) products are RoHS2.0 compliant

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