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Part Name(s) : AA038N1-99 Alpha
Alpha Industries
Description : 26–41 GHz Low Noise Amplifier View

Description
The AA038N1-99 is a broadband millimeterwave Amplifier in a rugged package.The Amplifier is designed for use in millimeterwave communication and sensor systems as the receiver front-end or transmitter gain stage when high gain, wide dynamic range, and Low Noise figure are required.The robust ceramic and metal package provides excellent electrical performance, excellent thermal performance, and a high degree of environmental protection for long-term reliability. A single supply voltage simplifies bias requirements.

Features
■ 3.8 dB Noise Figure
■ 18 dB Gain
■ +5 dBm Output Power
■ Rugged, Reliable Package
■ Single Voltage Operation
■ 100% RF and DC Testing

Part Name(s) : TLA-8-2014 TELEDYNE
Teledyne Technologies Incorporated
Description : Low Noise Amplifier 2 GHz - 8 GHz View

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.

Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

This Low Noise Amplifier offers Low Noise figure performance of 2.5 dB over the band 2 GHz to 8 GHz with 38 dB Gain.



 


Part Name(s) : TLA-8-2015 TELEDYNE
Teledyne Technologies Incorporated
Description : Low Noise Amplifier 2 GHz - 8 GHz View

Teledyne Microwave Amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC technology. The GaAs FET’s used in these Amplifiers are well established proven devices from multiple sources.

Teledyne Microwave offers a complete line of Narrow and broadband Amplifiers covering the frequency range 500 MHz to 40 GHz. These products are available in either connectorized packages or as modules. For a complete list of these products and more, please visit our website.

Other products from Teledyne Microwave include: Transceivers, Synthesizers, and YIG Products

This Low Noise Amplifier offers Low Noise figure performance of 2.5 dB over the band 2 GHz to 8 GHz with 48 dB Gain.



 


Part Name(s) : CXG1014N CXG1014 Sony
Sony Semiconductor
Description : 1.5 GHz Low Noise Amplifier/Down Conversion Mixer View

Description
The CXG1014N is a Low Noise Amplifier/down conversion mixer MMIC, designed using the Sony’s GaAs J-FET process.

Features
Low Noise
    NF=1.85 dB (Typ.) at 1.49 GHz (Low Noise Amplifier)
Low distortion
    Input IP3=+2 dBm (Typ.) at 1.49 GHz (mixer)
Low LO input power operation –15 dBm
• Single 3.0 V power supply operation
• 16-pin SSOP package

Applications
    1.5 GHz Japan digital cellular telephones


Part Name(s) : BGB540LNA Infineon
Infineon Technologies
Description : BGB540 as a 1.85 GHz Low Noise Amplifier View

BGB540 as a 1.85 GHz Low Noise Amplifier

Part Name(s) : LMX2216 LMX2216M LMX2216MX National-Semiconductor
National ->Texas Instruments
Description : 0.1 GHz to 2.0 GHz Low Noise Amplifier/Mixer for RF Personal Communications View

General Description
The LMX2216 is a monolithic, integrated Low Noise Amplifier (LNA) and mixer suitable as a first stage Amplifier and downconverter for RF receiver applications. The wideband operating capabilities of the LMX2216 alLow it to function over frequencies from 0.1 GHz to 2.0 GHz. It is fabricated using National Semiconductor’s ABiC IV BiCMOS process.
   
Features
■ Wideband RF operation from 0.1 GHz to 2.0 GHz
■ No external biasing components necessary
■ 3V operation
■ LNA input and output ports matched to 50Ω
■ Mixer input ports matched to 50X, output port matched
    to 200Ω.
■ Doubly balanced Gilbert cell mixer (single ended input
    and output)
Low power consumption
■ Power down feature
■ Small outline, plastic surface mount package
   
Applications
■ Digital European Cordless Telecommunications (DECT)
■ Portable wireless communications (PCS/PCN, cordless)
■ Wireless local area networks (WLANs)
■ Digital cellular telephone systems
■ Other wireless communications systems
   

Part Name(s) : MGA-86576 MGA-86576-TR1 MGA-86576-STRG AVAGO
Avago Technologies
Description : 1.5 – 8 GHz Low Noise GaAs MMIC Amplifier View

Description
Avago’s MGA-86576 is an economical, easy-to-use GaAs MMIC Amplifier that offers Low Noise and excellent gain for applications from 1.5 to 8 GHz.

Features
•  1.6 dB Noise Figure at 4 GHz
•  23 dB Gain at 4 GHz
•  +6 dBm P1dB at 4 GHz
•  Single +5 V Bias Supply

Applications
•  LNA or Gain Stage for 2.4 GHz and 5.7 GHz ISM Bands
•  Front End Amplifier for GPS Receivers
•  LNA or Gain Stage for PCN and MMDS Applications
•  C-Band Satellite Receivers
•  Broadband Amplifier for Instrumentation

Part Name(s) : CXG1013N Sony
Sony Semiconductor
Description : 1.7 to 2.0 GHz Low Noise Amplifier/Down Conversion Mixer View

Description

The CXG1013N is a Low Noise Amplifier/down conversion mixer MMIC,designed using the Sony's GaAs J-FET process.



Features

Low Noise

   NF=1.8 dB (Typ.) at 1.9 GHz (Low Noise Amplifier)

Low distortion

   Input IP3=–0.5 dBm (Typ.) at 1.9 GHz (mixer)

Low LO input power operation –12 dBm

• Single 3.0V power supply operation

• 16-pin SSOP package



Applications

• Japan digital cordless phone(PHS)

• DECT

• PCN

• PCS



 


Part Name(s) : AA022N1-00 Alpha
Alpha Industries
Description : 21–24 GHz GaAs MMIC Low Noise Amplifier View

Description
Alpha’s three-stage reactively-matched 21–24 GHz MMIC Low Noise Amplifier has typical small signal gain of 19 dB with a typical Noise figure of 2.6 dB at 23 GHz. The chip uses Alpha’s proven 0.25 µm Low Noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process.

Features
■ Single Bias Supply Operation (4.5 V)
■ 2.6 dB Typical Noise Figure at 23 GHz
■ 19 dB Typical Small Signal Gain
■ 0.25 µm Ti/Pd/Au Gates
■ 100% On-Wafer RF, DC and Noise Figure Testing
■ 100% Visual Inspection to MIL-STD-883 MT 2010

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