Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : HUF76419P3 HUF76419S3S HUF76419P3T HUF76419S3ST Fairchild
Fairchild Semiconductor
Description : 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET View

Features
• Ultra Low On-Resistance
    - rDS(ON) = 0.035Ω, VGS = 10V
    - rDS(ON) = 0.040Ω, VGS = 5V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER™ Electrical Models
    - Spice and SABER Thermal Impedance Models
    - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

Part Name(s) : 76419P 76419S HUF76419P3 HUF76419S3S HUF76419P3T HUF76419S3ST Intersil
Intersil
Description : 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET View

Features
• Ultra Low On-Resistance
    - rDS(ON) = 0.035Ω, VGS = 10V
    - rDS(ON) = 0.040Ω, VGS = 5V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER© Electrical Models
    - Spice and SABER© Thermal Impedance Models
    - www.Intersil.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

Part Name(s) : 76419P 76419S HUFA76419P3 HUFA76419S3S HUFA76419P3T HUFA76419S3ST Fairchild
Fairchild Semiconductor
Description : 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs View

Features
• Ultra Low On-Resistance
    - rDS(ON) = 0.035Ω, VGS = 10V
    - rDS(ON) = 0.040Ω, VGS = 5V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER™ Electrical Models
    - Spice and SABER Thermal Impedance Models
    - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves

Part Name(s) : 14N06L FP14N06L RFD14N06L RFD14N06LSM RFP14N06L Intersil
Intersil
Description : 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs View

14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs



These are N-Channel Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers.



Features

• 14A, 60V

• rDS(ON)= 0.100Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

   Components to PC Boards”



Part Name(s) : RFP15N05 RFP15N05L RFP15N06L Fairchild
Fairchild Semiconductor
Description : 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs View

15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs



These are N-Channel enhancement mode silicon gate Power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high Power bipolar switching transistors requiring high speed and low gate drive Power.

These types can be operated directly from integrated circuits.

Formerly developmental type TA0522.



Features

• 15A, 50V and 60V

• rDS(ON)= 0.140Ω

• Design Optimized for 5V Gate Drives

• Can be Driven from QMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”



 


Part Name(s) : RFP15N08L Intersil
Intersil
Description : 15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET View

15A, 80V, 0.140 Ohm, Logic Level, N-Channel Power MOSFET



The RFP15N08L is an N-Channel enhancement mode silicon gate Power field effect transistor specifically designed for use with Logic Level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off Power control from Logic circuit supply voltages.



Features

• 15A, 80V

•rDS(ON)= 0.140Ω

• Design Optimized for 5 Volt Gate Drive

• Can be Driven Directly from Q-MOS, N-MOS, TTL Circuits

• SOA is Power Dissipation Limited

• 175oC Rated Junction Temperature

Logic Level Gate

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


Part Name(s) : RFD4N06L RFD4N06LSM Intersil
Intersil
Description : 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs View

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate Power field effect transistors specifically designed for use with Logic Level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off Power control from Logic circuit supply voltages.

Features
• 4A, 60V
• rDS(ON) = 0.600Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly From Q-MOS, N-MOS,
   or TTL Circuits
• SOA is Power Dissipation Limited
• 175°C Rated Junction Temperature
Logic Level Gate
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Part Name(s) : RFD4N06L RFD4N06LSM Fairchild
Fairchild Semiconductor
Description : 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs View

The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate Power field effect transistors specifically designed for use with Logic Level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off Power control from Logic circuit supply voltages.

Features
• 4A, 60V
• rDS(ON) = 0.600Ω
• Design Optimized for 5 Volt Gate Drive
• Can be Driven Directly From Q-MOS, N-MOS,
   or TTL Circuits
   • SOA is Power Dissipation Limited
• 175°C Rated Junction Temperature
Logic Level Gate
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”

Part Name(s) : 3055L RFT3055 RFT3055LE Intersil
Intersil
Description : 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET View

This product is an N-Channel Power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.



Features

• 2.0A, 60V

•rDS(ON)= 0.150Ω

• 2kV ESD Protected

• Temperature Compensating PSPICE® Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

 


12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]