Features ● Wide area of safe operation realized by Diffused junction Mesa structure. ● High surge with standing capability by well balanced current distribution between driver and output transistor. ● hFE higher than 7 at Ic = 40 A. ● High hFE
Features ● Built-in damper diode on chip ● High voltage and high reliability by glass passivation. ● High speed switching ● Wide area of safe operation (ASO) ● "Full Pack" package for simplified mounting only by a screw, requires no insulator.