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Part Name(s) : M69AR048B M69AR048BL80ZB8 M69AR048BL85ZB8 ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16) 1.8V Asynchronous PSRAM View

SUMMARY DESCRIPTION

The M69AR048B is a 32 Mbit (33,554,432 bit) CMOS memory, organized as 2,097,152 words by 16 bits, and is supplied by a single 1.65V to 1.95V supply voltage range.

M69AR048B is a member of STMicroelectronics 1T/1C (one transistor per cell) memory family. These devices are manufactured using dynamic random access memory cells, to minimize the cell size, and maximize the amount of memory that can be implemented in a given area.



FEATURES SUMMARY

■ SUPPLY VOLTAGE: 1.65 to 1.95V

■ ACCESS TIMES: 70ns, 80ns, 85ns

■ LOW STANDBY CURRENT: 100µA

■ DEEP POWER-DOWN CURRENT: 10µA

■ BYTE CONTROL: UB/LB

■ PROGRAMMABLE PARTIAL ARRAY

■ COMPATIBLE WITH STANDARD LPSRAM

■ TRI-STATE COMMON I/O

■ 8 WORD PAGE ACCESS CAPABILITY: 25ns

■ WIDE OPERATING TEMPERATURE

– TA = –30 to +85°C

■ PARTIAL POWER-DOWN MODES

– Deep Power-Down

– 4 Mbit Partial Power-Down

– 8 Mbit Partial Power-Down

– 16 Mbit Partial Power-Down


Part Name(s) : M36DR432AD M36DR432AD10ZA M36DR432AD10ZA6 M36DR432AD10ZA6T M36DR432AD12ZA M36DR432AD12ZA6 M36DR432AD12ZA6T M36DR432AD85ZA M36DR432AD85ZA6 M36DR432AD85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36DR432AD/BD is a low-voltage Multiple Memory Product which combines two memory de vices: a 32 Mbit (2Mbit x16) non-volatile Flash memory and a 4 Mbit SRAM.
The memory is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY
■ Multiple Memory Product
   – 1 bank of 32 Mbit (2Mb x16) Flash Memory
   – 1 bank of 4 Mbit (256Kb x16) SRAM
■ SUPPLY VOLTAGE
   – VDDF = VDDS =1.65V to 2.2V
   – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 85ns, 100ns, 120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code, M36DR432AD: 00A0h
   – Bottom Device Code, M36DR432BD: 00A1h

FLASH MEMORY
■ MEMORY BLOCKS
   – Dual Bank Memory Array: 4 Mbit, 28 Mbit
   – Parameter Blocks (Top or Bottom location)
■ PROGRAMMING TIME
   – 10µs by Word typical
   – Double Word Program Option
Asynchronous PAGE MODE READ
   – Page Width: 4 Words
   – Page Access: 35ns
   – Random Access: 85ns, 100ns, 120ns
■ DUAL BANK OPERATIONS
   – Read within one Bank while Program or
      Erase within the other
   – No delay between Read and Write operations
■ BLOCK LOCKING
   – All blocks locked at Power up
   – Any combination of blocks can be locked
   – WPF for Block Lock-Down
■ COMMON FLASH INTERFACE (CFI)
   – 64 bit Unique Device Identifier
   – 64 bit User Programmable OTP Cells
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1ppm/year

SRAM
■ 4 Mbit (256Kb x16)
■ LOW VDDS DATA RETENTION: 1.0V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M36DR432-ZAT M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR432A120ZA6C M36DR432A120ZA6T M36DR432AZA M36DR432B M36DR432B100ZA6C M36DR432B100ZA6T STMICROELECTRONICS
STMicroelectronics
Description : 32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product View

DESCRIPTION
The M36DR432 is a multichip memory device containing a 32 Mbit boot block Flash memory and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = VDDS =1.65V to 2.2V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 100,120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36DR432A: 00A0h
    – Bottom Device Code, M36DR432B: 00A1h

FLASH MEMORY
32 Mbit (2Mb x16) BOOT BLOCK
    – Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
■ ASYNCRONOUS PAGE MODE READ
    – Page width: 4 Word
    – Page Mode Access Time: 35ns
■ DUAL BANK OPERATION
    – Read within one Bank while Program or Erase within the other
    – No Delay between Read and Write Operations
■ BLOCK PROTECTION ON ALL BLOCKS
    – WPF for Block Locking
■ COMMON FLASH INTERFACE
    – 64 bit Security Code

SRAM
■ 4 Mbit (256K x 16 bit)
■ LOW VDDS DATA RETENTION: 1V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M58LW032A M58LW032 M58LW032A110N M58LW032A110N1 M58LW032A110N1T M58LW032A110N6 M58LW032A110N6T M58LW032A110ZA M58LW032A110ZA1 M58LW032A110ZA1T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory View

SUMMARY DESCRIPTION
The M58LW032 is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an Asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY
■ WIDE x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
   – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
   – VDDQ = 1.8V to VDD for I/O Buffers
■ SYNCHRONOUS/Asynchronous READ
   – Synchronous Burst read
   – Asynchronous Random Read
   – Asynchronous Address Latch Controlled Read
   – Page Read
■ ACCESS TIME
   – Synchronous Burst Read up to 56MHz
   – Asynchronous Page Mode Read 90/25ns and 110/25ns
   – Random Read 90ns, 110ns.
■ PROGRAMMING TIME
   – 16 Word Write Buffer
   – 18µs Word effective programming time
■ 64 UNIFORM 32 KWord MEMORY BLOCKS
■ BLOCK PROTECTION/ UNPROTECTION
■ PROGRAM and ERASE SUSPEND
■ 128 bit PROTECTION REGISTER
■ COMMON FLASH INTERFACE
■ 100, 000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Device Code M58LW032A: 8816h


Part Name(s) : M36W0R6040B0 M36W0R6040B0ZAQ M36W0R6040B0ZAQE M36W0R6040B0ZAQF M36W0R6040B0ZAQT M36W0R6040T0 M36W0R6040T0ZAQ M36W0R6040T0ZAQE M36W0R6040T0ZAQF M36W0R6040T0ZAQT ST-Microelectronics
STMicroelectronics
Description : 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package View

SUMMARY DESCRIPTION

The M36W0R6040T0 and M36W0R6040B0 are Multiple Memory Products which combine two memory devices; a 64-Mbit, Multiple Bank Flash memories, the M58WR064FT/B, and a 16-Mbit Pseudo SRAM, the M69AR024B. Recommended operating conditions do not allow more than one memory to be active at the same time. The memory is offered in a Stacked TFBGA88 (8x10mm, 8x10 ball array, 0.8mm pitch) package.

In addition to the standard version, the packages are also available in Lead-free version, in compliance with JEDEC Std J-STD-020B, the ST ECO PACK 7191395 Specification, and the RoHS (Restriction of Hazardous Substances) directive.

All packages are compliant with Lead-free soldering processes.



FEATURES SUMMARY

■ MULTI-CHIP PACKAGE

   – 1 die of 64 Mbit (4Mb x 16) Flash Memory

   – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM

■ SUPPLY VOLTAGE

   – VDDF = VDDP = VDDQ = 1.7V to 1.95V

■ LOW POWER CONSUMPTION

■ ELECTRONIC SIGNATURE

   – Manufacturer Code: 20h

   – Device Code (Top Flash Configuration), M36W0R6040T0: 8810h

   – Device Code (Bottom Flash Configuration), M36W0R6040B0: 8811h

■ PACKAGES

   – Compliant with Lead-Free Soldering Processes

   – Lead-Free Versions



FLASH MEMORY

■ PROGRAMMING TIME

   – 8µs by Word typical for Fast Factory Program

   – Double/Quadruple Word Program option

   – Enhanced Factory Program options

■ MEMORY BLOCKS

   – Multiple Bank Memory Array: 4 Mbit Banks

   – Parameter Blocks (Top location)

■ SYNCHRONOUS / Asynchronous READ

   – Synchronous Burst Read mode: 66MHz

   – Asynchronous/ Synchronous Page Read mode

   – Random Access: 70ns

■ DUAL OPERATIONS

   – Program Erase in one Bank while Read in others

   – No delay between Read and Write operations

■ BLOCK LOCKING

   – All blocks locked at Power-up

   – Any combination of blocks can be locked

   – WPF for Block Lock-Down

■ SECURITY

   – 128-bit user programmable OTP cells

   – 64-bit unique device number

■ COMMON FLASH INTERFACE (CFI)

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK



PSRAM

■ ACCESS TIME: 70ns

■ LOW STANDBY CURRENT: 110µA

■ DEEP POWER DOWN CURRENT: 10µA



 


Part Name(s) : M59MR032C M59MR032C100GC6T M59MR032C100ZC6T M59MR032C120GC6T M59MR032C120ZC6T M59MR032CGC M59MR032CZC M59MR032D M59MR032D100GC6T M59MR032D100ZC6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory View

DESCRIPTION
The M59MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE
    – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read
    – VPP = 12V for fast Program (optional)
■ MULTIPLEXED ADDRESS/DATA
■ SYNCHRONOUS / Asynchronous READ
    – Configurable Burst mode Read
    – Page mode Read (4 Words Page)
    – Random Access: 100ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Double Word Programming Option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 8 Mbit - 24 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL BANK OPERATIONS
    – Read within one Bank while Program or Erase within the other
    – No delay between Read and Write operations
■ BLOCK PROTECTION/UNPROTECTION
    – All Blocks protected at Power-up
    – Any combination of Blocks can be protected
■ COMMON FLASH INTERFACE (CFI)
■ 64 bit SECURITY CODE
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M59MR032C: A4h
    – Bottom Device Code, M59MR032D: A5h

Part Name(s) : M58MR032-ZCT M58MR032C M58MR032C100ZC6 M58MR032C100ZC6T M58MR032C120ZC6 M58MR032C120ZC6T M58MR032D M58MR032D100ZC6 M58MR032D100ZC6T M58MR032D120ZC6 ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory View

DESCRIPTION
The M58MR032 is a 32 Mbit non-volatile Flash memory that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.7V to 2.0V VDD supply for the circuitry. For Program and Erase operations the necessary high voltages are generated internally.

■ SUPPLY VOLTAGE
    – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read
    – VPP = 12V for fast Program (optional)
■ MULTIPLEXED ADDRESS/DATA
■ SYNCHRONOUS / Asynchronous READ
    – Burst mode Read: 40MHz
    – Page mode Read (4 Words Page)
    – Random Access: 100ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Two or four words programming option
■ MEMORY BLOCKS
    – Dual Bank Memory Array: 8/24 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Read within one Bank while Program or Erase within the other
    – No delay between Read and Write operations
■ PROTECTION/SECURITY
    – All Blocks protected at Power-up
    – Any combination of Blocks can be protected
    – 64 bit unique device identifier
    – 64 bit user programmable OTP cells
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M58MR032C: 88DAh
    – Bottom Device Code, M58MR032D: 88DBh

Part Name(s) : M58LW032C M58LW032C110N1 M58LW032C110N1E M58LW032C110N1F M58LW032C110N1T M58LW032C110N6 M58LW032C110N6E M58LW032C110N6F M58LW032C110N6T M58LW032C110ZA1 ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Uniform Block, Burst) 3V Supply Flash Memory View

SUMMARY DESCRIPTION
M58LW032C is a 32 Mbit (2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7V to 3.6V) core supply. On power-up the memory defaults to Read mode with an Asynchronous bus where it can be read in the same way as a non-burst Flash memory.

FEATURES SUMMARY
■ WIDE x16 DATA BUS for HIGH BANDWIDTH
■ SUPPLY VOLTAGE
    – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations
    – VDDQ = 1.8 to VDD for I/O Buffers
■ SYNCHRONOUS/Asynchronous READ
    – Synchronous Burst read
    – Asynchronous Random Read
    – Asynchronous Address Latch Controlled Read
    – Page Read
■ ACCESS TIME
    – Synchronous Burst Read up to 56MHz
    – Asynchronous Page Mode Read 90/25ns, 110/25ns
    – Random Read 90ns, 110ns
■ PROGRAMMING TIME
    – 16 Word Write Buffer
    – 12µs Word effective programming time
32 UNIFORM 64 KWord MEMORY BLOCKS
■ ENHANCED SECURITY
    – Block Protection/ Unprotection
    – Smart Protection: irreversible block locking system
    – VPEN signal for Program Erase Enable
    – 128 bit Protection Register with 64 bit Unique Code in OTP area
■ PROGRAM and ERASE SUSPEND
■ COMMON FLASH INTERFACE
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 0020h
    – Device Code M58LW032C : 8822h

Part Name(s) : M36W432BG M36W432BGZA M36W432TGZA M36W432BG-ZA M36W432BG-ZAT M36W432BG70ZA1 M36W432BG70ZA1T M36W432BG70ZA6 M36W432BG70ZA6T M36W432BG85ZA1 STMICROELECTRONICS
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product View

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple Memory Product which combines two memory devices; a 32 Mbit boot block Flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash Memory
    – 4 Mbit (256Kb x 16) SRAM Memory
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY
■ MEMORY BLOCKS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

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