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Part Name(s) : LH28F016SUHT-10 Sharp
Sharp Electronics
Description : 16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash MEMORY View

16 Mbit(1 Mbit x 16, 2 Mbit x 8) 5V Single Voltage Flash MEMORY

INTRODUCTION
The specifications intended to give an overview of the chip feature-set and of the operating AC/DC specifications. Please refer to Users Manual also, to leam detail usage.

Part Name(s) : M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T M36W216BIZA M36W216T M36W216TI M36W216TI-ZAT M36W216TI70ZA1T M36W216TI85ZA1T ST-Microelectronics
STMicroelectronics
Description : 16 Mbit 1Mb x16 / Boot Block Flash MEMORY and 2 Mbit 128Kb x16 SRAM / Multiple MEMORY Product View

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple MEMORY Product which combines two MEMORY devices; a

16 Mbit boot block Flash MEMORY and a 2 Mbit SRAM. Recommended operating conditions do not allow both the Flash MEMORY and the SRAM MEMORY to be active at the same time. The MEMORY is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).



FEATURES SUMMARY

■MULTIPLE MEMORY PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash MEMORY

– 2 Mbit (128Kb x 16) SRAM

■SUPPLY VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ACCESS TIME: 70ns, 85ns

■LOW POWER CONSUMPTION

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh


Part Name(s) : M36DR432-ZAT M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR432A120ZA6C M36DR432A120ZA6T M36DR432AZA M36DR432B M36DR432B100ZA6C M36DR432B100ZA6T STMICROELECTRONICS
STMicroelectronics
Description : 32 Mbit (2Mb x16, Dual Bank, Page) Flash MEMORY and 4 Mbit (256K x16) SRAM, Multiple MEMORY Product View

DESCRIPTION
The M36DR432 is a multichip MEMORY device containing a 32 Mbit boot block Flash MEMORY and a 4 Mbit of SRAM. The device is offered in a Stacked LFBGA66 (0.8 mm pitch) package.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = VDDS =1.65V to 2.2V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 100,120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36DR432A: 00A0h
    – Bottom Device Code, M36DR432B: 00A1h

FLASH MEMORY
■ 32 Mbit (2Mb x16) BOOT BLOCK
    – Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
■ ASYNCRONOUS PAGE MODE READ
    – Page width: 4 Word
    – Page Mode Access Time: 35ns
■ DUAL BANK OPERATION
    – Read within one Bank while Program or Erase within the other
    – No Delay between Read and Write Operations
■ BLOCK PROTECTION ON ALL BLOCKS
    – WPF for Block Locking
■ COMMON FLASH INTERFACE
    – 64 bit Security Code

SRAM
■ 4 Mbit (256K x 16 bit)
■ LOW VDDS DATA RETENTION: 1V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : DD28F032SA DD28F032SA-070 DD28F032SA-080 DD28F032SA-100 DD28F032SA-150 Intel
Intel
Description : 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile™ MEMORY View

PRODUCT OVERVIEW
The DD28F032SA is a high-performance 32-MBIT (33,554,432-bit) block erasable nonvolatile random access MEMORY organized as either 2 Mword x 16, or 4 Mbyte x 8. The DD28F032SA is built using two 28F016SA chips encapsulated in a single 56- lead TSOP Type I package. The DD28F032SA includes sixty-four 64-KB (65,536) blocks or sixtyfour 32-KW (32,768) blocks.

■ User-Selectable 3.3V or 5V VCC
■ User-Configurable x8 or x16 Operation
■ 70 ns Maximum Access Time
■ 28.6 MB/sec Burst Write Transfer Rate
■ 1 Million Typical Erase Cycles per Block
■ 56-Lead, 1.2 x 14 x 20 mm Advanced Dual Die TSOP Package Technology
■ 64 Independently Lockable Blocks
■ Revolutionary Architecture
    - 100% Backwards-Compatible with Intel 28F016SA
    - Pipelined Command Execution
    - Program during Erase
■ 2 mA Typical ICC in Static Mode
■ 2 µA Typical Deep Power-Down
■ State-of-the-Art 0.6 µm ETOX™ IV Flash Technology


Part Name(s) : M36W432BG M36W432BG-ZA M36W432BG-ZAT M36W432BGZA M36W432BGZAT M36W432TG M36W432TG-ZA M36W432TG-ZAT M36W432TGZA M36W432TGZAT ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash MEMORY and 4 Mbit (256Kb x16) SRAM, Multiple MEMORY Product View

SUMMARY DESCRIPTION
The M36W432TG is a low voltage Multiple MEMORY Product which combines two MEMORY devices; a 32 Mbit boot block Flash MEMORY and a 4 Mbit SRAM. Recommended operating conditions do not allow both the Flash and SRAM devices to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
    – 32 Mbit (2Mb x 16), Boot Block, Flash MEMORY
    – 4 Mbit (256Kb x 16) SRAM MEMORY
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432TG: 88BAh
    – Bottom Device Code, M36W432BG: 88BBh

FLASH MEMORY
MEMORY BLOCKS
    – Parameter Blocks (Top or Bottom Location)
    – Main Blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M36DR432AD M36DR432AD10ZA M36DR432AD10ZA6 M36DR432AD10ZA6T M36DR432AD12ZA M36DR432AD12ZA6 M36DR432AD12ZA6T M36DR432AD85ZA M36DR432AD85ZA6 M36DR432AD85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Dual Bank, Page) Flash MEMORY and 4 Mbit (256Kb x16) SRAM, Multiple MEMORY Product View

SUMMARY DESCRIPTION
The M36DR432AD/BD is a low-voltage Multiple MEMORY Product which combines two MEMORY de vices: a 32 Mbit (2Mbit x16) non-volatile Flash MEMORY and a 4 Mbit SRAM.
The MEMORY is available in a Stacked LFBGA66 12x8mm - 8x8 active ball array, 0.8mm pitch pack age and supplied with all the bits erased (set to ‘1’).

FEATURES SUMMARY
■ Multiple MEMORY Product
   – 1 bank of 32 Mbit (2Mb x16) Flash MEMORY
   – 1 bank of 4 Mbit (256Kb x16) SRAM
■ SUPPLY VOLTAGE
   – VDDF = VDDS =1.65V to 2.2V
   – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 85ns, 100ns, 120ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 0020h
   – Top Device Code, M36DR432AD: 00A0h
   – Bottom Device Code, M36DR432BD: 00A1h

FLASH MEMORY
MEMORY BLOCKS
   – Dual Bank MEMORY Array: 4 Mbit, 28 Mbit
   – Parameter Blocks (Top or Bottom location)
■ PROGRAMMING TIME
   – 10µs by Word typical
   – Double Word Program Option
■ ASYNCHRONOUS PAGE MODE READ
   – Page Width: 4 Words
   – Page Access: 35ns
   – Random Access: 85ns, 100ns, 120ns
■ DUAL BANK OPERATIONS
   – Read within one Bank while Program or
      Erase within the other
   – No delay between Read and Write operations
■ BLOCK LOCKING
   – All blocks locked at Power up
   – Any combination of blocks can be locked
   – WPF for Block Lock-Down
■ COMMON FLASH INTERFACE (CFI)
   – 64 bit Unique Device Identifier
   – 64 bit User Programmable OTP Cells
■ ERASE SUSPEND and RESUME MODES
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
   – Defectivity below 1ppm/year

SRAM
■ 4 Mbit (256Kb x16)
■ LOW VDDS DATA RETENTION: 1.0V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : M36W832BE M36W832BE-ZAT M36W832BE70ZA1S M36W832BE70ZA1T M36W832BE70ZA6S M36W832BE70ZA6T M36W832BE85ZA1S M36W832BE85ZA1T M36W832BE85ZA6S M36W832BE85ZA6T ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x16, Boot Block) Flash MEMORY and 8 Mbit (512Kb x16) SRAM, Multiple MEMORY Product View

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple MEMORY Product which combines two MEMORY devices; a 32 Mbit boot block Flash MEMORY and an 8 Mbit SRAM. Recommended operating conditions do not allow both the Flash and the SRAM to be active at the same time.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

FLASH MEMORY
■ 32 Mbit (2Mb x16) BOOT BLOCK
    – 8 x 4 KWord Parameter Blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for Block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ COMMON FLASH INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Part Name(s) : VS28F016SV MS28F016SV Intel
Intel
Description : 16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFile™ MEMORY View

Intel’s VS/MS28F016SV, 16-Mbit FlashFiIeTM MEMORY is the latest member of Intel’s high density, high performance MEMORY family for the Industrial, Special Environment, and Military markets. Its user selectable VCC and VPP (SmartVoltage Technology), innovative capabilities, 100% compatibility with the VE28F008 and M28F008, multiple power savings modes, selective block locking, and very fast read/write performance make it the ideal choice for any applications that need a high density and a wide temperature range MEMORY device. The VS/MS28F016SV is the ideal choice for designers who need to break free from the dependence on slow rotating media or battery backed up MEMORY arrays.
   
■ VS28F016SV
    — -40°C to +125°C
    — SE2 Grade
■ MS28F016SV
    — -55°C to +125°C
    — QML Certified
    — SE1 Grade
■ SmartVoltage Technology
    — User-Selectable 3.3V or 5V VCC
    — User-Selectable 5V or 12V VPP
■ Three Voltage/Speed Options
    — 80 ns Access Time, 5.0V ±5%
    — 85 ns Access Time, 5.0V ±10%
    — 120 ns Access Time, 3.3V ±10%
■ 1 Million Erase Cycles per Block
    Typical
■ 14.3 MB/sec Burst Write Transfer Rate
■ Configurable x8 or x16 Operation
■ 56-Lead SSOP Plastic Package
■ Backwards-Compatible with VE28F008,
    M28F008 and 28F016SA Command Set
■ Revolutionary Architecture
    — Multiple Command Execution
    — Write During Erase
    — Command Super-Set of the Intel
        VE28F008, M28F008
    — Page Buffer Write
■ Multiple Power Savings Modes
■ Two 256-Byte Page Buffers
■ State-of-the-Art 0.6 μm ETOX™ IV
    Flash Technology
   

Part Name(s) : M58CR032C100ZB6T M58CR032C120ZB6T M58CR032C85ZB6T M58CR032CZB M58CR032D100ZB6T M58CR032D120ZB6T M58CR032D85ZB6T M58CR032DZB M58CR032C M58CR032D ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash MEMORY View

SUMMARY DESCRIPTION
The M58CR032 is a 32 Mbit (2Mbit x16) non-volatile Flash MEMORY that may be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 1.65V to 2.0V VDD supply for the circuitry and a 1.65V to 3.3V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming. The VPP pin can also be used as a control pin to provide absolute protection against program or erase.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
    – VDD = 1.65V to 2V for Program, Erase and Read
    – VDDQ = 1.65V to 3.3V for I/O Buffers
    – VPP = 12V for fast Program (optional)
■ SYNCHRONOUS / ASYNCHRONOUS READ
    – Burst mode Read: 54MHz
    – Page mode Read (4 Words Page)
    – Random Access: 85, 100, 120 ns
■ PROGRAMMING TIME
    – 10µs by Word typical
    – Double/Quadruple Word programming option
MEMORY BLOCKS
    – Dual Bank MEMORY Array: 8/24 Mbit
    – Parameter Blocks (Top or Bottom location)
■ DUAL OPERATIONS
    – Read in one Bank while Program or Erase in other
    – No delay between Read and Write operations
■ BLOCK LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WP for Block Lock-Down
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter block permanently lockable
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M58CR032C: 88C8h
    – Bottom Device Code, M58CR032D: 88C9h

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