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Part Name(s) : M29W320EB M29W320ET Numonyx
Numonyx -> Micron
Description : or="FF003B">32Mbit (or="FF003B">4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory View

 Description

The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical Block architecture. The M29W320E has an array of 8 Parameter and 63 main Blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.

M29W320E has an extra 32 Kword (x16 mode) or 64 Kbyte (x8 mode) Block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone.

Each Block can be erased independently so it is possible to preserve valid data while old data is erased. The Blocks can be protected to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.



 


Part Name(s) : M29W320DB M29W320DT M29W320DT70N1 M29W320DT70N1T M29W320DT70N1E M29W320DT70N1F M29W320DT70N6 M29W320DT70N6T M29W320DT70N6E M29W320DT70N6F ST-Microelectronics
STMicroelectronics
Description : 32 Mbit (or="FF003B">4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V supply Flash memory View

Summary description
The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into Blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each Block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Feature summary
supply Voltage
   – VCC = 2.7V to 3.6V for Program, Erase and Read
   – VPP =12V for Fast Program (optional)
■ Access time: 70, 90ns
■ Programming time
– 10µs per Byte/Word typical
■ 67 memory Blocks
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 64 Main Blocks
■ Program/Erase controller
   – Embedded Byte/Word Program algorithms
■ Erase Suspend and Resume modes
   – Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
   – Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
   – 64 bit Security code
■ Low power consumption
   – Standby and Automatic Standby
■ 100,000 Program/Erase cycles per Block
■ Electronic Signature
   – Manufacturer Code: 0020h
   – Top Device Code M29W320DT: 22CAh
   – Bottom Device Code M29W320DB: 22CBh
■ ECOPACK® packages available

Part Name(s) : LH28F320S3 LH28F320S3-L11 LH28F320S3-L110 LH28F320S3-L130 LH28F320S3-L14 LH28F320S3-L140 LH28F320S3-L14C LH28F320S3-L160 LH28F320S3B-L14 LH28F320S3HB-L14 Sharp
Sharp Electronics
Description : 32-MBIT(or="FF003B">4Mbx8/2MBx16)Smart 3 Flash MEMorY View

32-MBIT(or="FF003B">4Mbx8/2MBx16)Smart 3 Flash MEMorY

Part Name(s) : M50LPW012 M50LPW012K M50LPW012K1T ST-Microelectronics
STMicroelectronics
Description : 2 Mbit (256Kb x8, Boot Block) 3V supply Low Pin Count Flash Memory View

DESCRIPTION
The M50LPW012 is a 2Mbit (256Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
   – VCC = 3V to 3.6V for Program, Erase and
      Read Operations
   – VPP = 12V for Fast Program and Fast Erase
■ LOW PIN COUNT (LPC)
   – Standard Interface for embedded operation
      with PC Chipsets that are without automap
      ping memory features
■ ADDRESS/ADDRESS MULTIPLEXED (A/A MUX)
   – Interface for programming equipment com
      patibility
■ LOW PIN COUNT (LPC) HARDWARE
   INTERFACE MODE
   – 5 Signal Communication Interface supporting
      Read and Write Operations
   – Hardware Write Protect Pins for Block Pro
      tection
   – Register Based Read and Write Protection
   – 5 Additional General Purpose Inputs for plat
      form design flexibility
   – Synchronized with 33MHz PCI clock
■ BYTE PROGRAMMING TIME
   – Single Byte Mode 10µs typical
   – Quadruple Byte Mode 2.5µs typical
■ 7 MEMorY BlockS
   – 1 Boot Block
   – 4 Main Blocks and 2 Parameter Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program and Block/Chip
      Erase algorithms
   – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ For USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: 3Bh


Part Name(s) : M28W640 M28W640C-ZBT M28W640CB M28W640CB80N1T M28W640CB80N6T M28W640CB80ZB1T M28W640CB80ZB6T M28W640CB90N1T M28W640CB90N6T M28W640CB90ZB1T ST-Microelectronics
STMicroelectronics
Description : 64 Mbit (4Mb x16, Boot Block)3V supply Flash Memory View

SUMMARY DESCRIPTION

The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the Block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I/O pin down to 1.65V. An optional 12V VPPpower supply is provided to speed up customer programming.



FEATURES SUMMARY

supply VOLTAGE

–VDD= 2.7V to 3.6V Core Power supply

–VDDQ= 1.65V to 3.3V for Input/Output

–VPP= 12V for fast Program (optional)

■ACCESS TIME

– 3.0V to 3.6V: 80ns

– 2.7V to 3.6V: 90ns

■PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■COMMON FLASH INTERFACE

■MEMorY BlockS

Parameter Blocks (Top or Bottom location)

– Main Blocks

Block LOCKING

– All Blocks locked at Power Up

– Any combination of Blocks can be locked

–WPfor Block Lock-Down

■SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■AUTOMATIC STAND-BY MODE

■PROGRAM and ERASE SUSPEND

■100,000 PROGRAM/ERASE CYCLES per Block

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W640CT: 8848h

– Bottom Device Code, M28W640CB: 8849h


Part Name(s) : M50LPW116 M50LPW116N1T M50LPW116N5T M50LPW116N ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x8, Boot Block) 3V supply Low Pin Count Flash Memory View

DESCRIPTION
The M50LPW116 is a 16 Mbit (2Mb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming, and fast erasing, an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
    – VCC = 3V to 3.6V for Program, Erase and Read Operations
    – VPP = 12V for Fast Program and Fast Erase
■ TWO INTERFACES
    – Low Pin Count (LPC) Standard Interface for embedded operation with PC Chipsets.
    – Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.
■ LOW PIN COUNT (LPC) HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33 MHz PCI clock
■ BYTE PROGRAMMING TIME
    – Single Byte Mode: 10µs (typical)
    – Quadruple Byte Mode: 2.5µs (typical)
■ 50 MEMorY BlockS
    – 1 Boot Block
    – 18 Parameter and 31 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program and Block/Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 30h

Part Name(s) : M29W008EB M29W008ET M29W00EB M29W008EB70N1E M29W008EB70N1F M29W008EB70N6E M29W008EB70N6F M29W008EB90N1E M29W008EB90N1F M29W008EB90N6E ST-Microelectronics
STMicroelectronics
Description : 8 Mbit (1Mb x 8, Boot Block) 3V supply Flash Memory View

Summary description
The M29W008E is a 8 Mbit (1Mb x 8) non-volatile Flash memory that can be read, erased at Block, multi-Block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

FEATURES SUMMARY
■ ACCESS TIMES: 70ns, 90ns
■ PROGRAMMING TIME: 10µs per Byte typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Embedded Byte Program Algorithm
    – Status Register bits and Ready/Busy Output
■ 19 MEMorY BlockS
    – 1 Boot Block (Top or Bottom location)
    – 2 Parameter and 16 Main Blocks
Block, MULTI-Block and CHIP ERASE
■ MULTIPLE Block PROTECTION/ TEMPorARY UNPROTECTION MODE
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby modes
■ 100,000 PROGRAM/ERASE CYCLES per Block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – M29W008ET Device Code: D2h
    – M29W008EB Device Code: DCh
■ ECOPACK® TSOP40 PACKAGE

Part Name(s) : M50LPW040 M50LPW040K M50LPW040N M50LPW040N1T M50LPW040N5T M50LPW040K1T M50LPW040K5T ST-Microelectronics
STMicroelectronics
Description : 4 Mbit (512Kb x8, Uniform Block) 3V supply Low Pin Count Flash Memory View

DESCRIPTION
The M50LPW040 is a 4 Mbit (512Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
    – VCC = 3V to 3.6V for Program, Erase and Read Operations
    – VPP = 12V for Fast Program and Fast Erase (optional)
■ TWO INTERFACES
    – Low Pin Count (LPC) Standard Interface for embedded operation with PC Chipsets.
    – Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.
■ LPC HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33 MHz PCI clock
■ PROGRAMMING TIME
    – 10µs typical
    – Quadruple Byte Programming Option
■ 8 UNIForM 64 Kbyte MEMorY BlockS
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program and Block/Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
    – Read other Blocks during Program/Erase Suspend
    – Program other Blocks during Erase Suspend
■ For USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 26h

Part Name(s) : M50LPW041 M50LPW041K M50LPW041N M50LPW041K1 M50LPW041K1T M50LPW041N1 M50LPW041N1T ST-Microelectronics
STMicroelectronics
Description : 4 Mbit (512Kb x8, Uniform Block) 3V supply Low Pin Count Flash Memory View

DESCRIPTION
The M50LPW041 is a 4 Mbit (512Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
   – VCC = 3V to 3.6V for Program, Erase and
      Read Operations
   – VPP = 12V for Fast Program and Fast Erase
■ LOW PIN COUNT (LPC)
   – Standard Interface for embedded operation
      with PC Chipsets that are without
      automapping memory features
■ ADDRESS/ADDRESS MULTIPLEXED
   – A/A Mux Interface for programming equipment
      compatibility
■ LOW PIN COUNT (LPC) HARDWARE
   INTERFACE MODE
   – 5 Signal Communication Interface supporting
      Read and Write Operations
   – Hardware Write Protect Pins for Block Protection
   – Register Based Read and Write Protection
   – 5 Additional General Purpose Inputs for plat
      form design flexibility
   – Synchronized with 33MHz PCI clock
■ BYTE PROGRAMMING TIME
   – Single Byte Mode: 10µs (typical)
   – Quadruple Byte Mode: 2.5µs (typical)
■ 8 UNIForM 64 Kbyte MEMorY BlockS
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program and Block/Chip
      Erase algorithms
   – Status Register Bits
■ PROGRAM and ERASE SUSPEND
   – Read other Blocks during Program/Erase
      Suspend
   – Program other Blocks during Erase Suspend
■ For USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: 3Ch

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