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Part Name(s) : M29W320EB M29W320ET
Numonyx
Numonyx -> Micron
Description : 32Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

 Description

The M29W320E is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode. The device features an asymmetrical Block architecture. The M29W320E has an array of 8 Parameter and 63 main Blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.

M29W320E has an extra 32 Kword (x16 mode) or 64 Kbyte (x8 mode) Block, the Extended Block, that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone.

Each Block can be erased independently so it is possible to preserve valid data while old data is erased. The Blocks can be protected to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.



 


Description : 32 Mbit (4Mbx8 or 2Mbx16, Non-Uniform Parameter Blocks, Boot Block), 3V supply Flash memory

Summary description
The M29W320D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into Blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each Block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Feature summary
supply Voltage
   – VCC = 2.7V to 3.6V for Program, Erase and Read
   – VPP =12V for Fast Program (optional)
■ Access time: 70, 90ns
■ Programming time
– 10µs per Byte/Word typical
■ 67 memory Blocks
   – 1 Boot Block (Top or Bottom Location)
   – 2 Parameter and 64 Main Blocks
■ Program/Erase controller
   – Embedded Byte/Word Program algorithms
■ Erase Suspend and Resume modes
   – Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
   – Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
   – 64 bit Security code
■ Low power consumption
   – Standby and Automatic Standby
■ 100,000 Program/Erase cycles per Block
■ Electronic Signature
   – Manufacturer Code: 0020h
   – Top Device Code M29W320DT: 22CAh
   – Bottom Device Code M29W320DB: 22CBh
■ ECOPACK® packages available

Sharp
Sharp Electronics
Description : 32-MBIT(4Mbx8/2Mbx16) Smart 5 Flash MEMORY

INTRODUCTION
This datasheet contains LH28F320S5-L90/12 specifications. Section 1 provides a flash memory overview. Section 2, 3, 4 and 5 describe the memory organization and functionality. Section 6 covers electrical specifications.

Product Overview
The LH28F320S5-L90/12 is a high-performance 32-Mbit Smart 5 Flash memory organized as 4Mbx8/2Mbx16. The 4MB of data is arranged in sixty-four 64-Kbyte Blocks which are individually erasable, lockable, and unlockable in-system. The memory map is shown in Figure 4.

Description : 32-MBIT(4Mbx8/2Mbx16)Smart 3 Flash MEMORY

32-MBIT(4Mbx8/2Mbx16)Smart 3 Flash MEMORY

STMICROELECTRONICS
STMicroelectronics
Description : 2 Mbit (256Kb x8, Boot Block) 3V supply Low Pin Count Flash Memory

DESCRIPTION
The M50LPW012 is a 2Mbit (256Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
    – VCC = 3V to 3.6V for Program, Erase and Read Operations
    – VPP = 12V for Fast Program and Fast Erase
■ LOW PIN COUNT (LPC)
    – Standard Interface for embedded operation with PC Chipsets that are without automapping memory features
■ ADDRESS/ADDRESS MULTIPLEXED (A/A MUX)
    – Interface for programming equipment compatibility
■ LOW PIN COUNT (LPC) HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33MHz PCI clock
■ BYTE PROGRAMMING TIME
    – Single Byte Mode 10µs typical
    – Quadruple Byte Mode 2.5µs typical
■ 7 MEMORY Blocks
    – 1 Boot Block
    – 4 Main Blocks and 2 Parameter Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program and Block/Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ FOR USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 3Bh

ST-Microelectronics
STMicroelectronics
Description : 2 Mbit (256Kb x8, Boot Block) 3V supply Low Pin Count Flash Memory

DESCRIPTION
The M50LPW012 is a 2Mbit (256Kb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
   – VCC = 3V to 3.6V for Program, Erase and
      Read Operations
   – VPP = 12V for Fast Program and Fast Erase
■ LOW PIN COUNT (LPC)
   – Standard Interface for embedded operation
      with PC Chipsets that are without automap
      ping memory features
■ ADDRESS/ADDRESS MULTIPLEXED (A/A MUX)
   – Interface for programming equipment com
      patibility
■ LOW PIN COUNT (LPC) HARDWARE
   INTERFACE MODE
   – 5 Signal Communication Interface supporting
      Read and Write Operations
   – Hardware Write Protect Pins for Block Pro
      tection
   – Register Based Read and Write Protection
   – 5 Additional General Purpose Inputs for plat
      form design flexibility
   – Synchronized with 33MHz PCI clock
■ BYTE PROGRAMMING TIME
   – Single Byte Mode 10µs typical
   – Quadruple Byte Mode 2.5µs typical
■ 7 MEMORY Blocks
   – 1 Boot Block
   – 4 Main Blocks and 2 Parameter Blocks
■ PROGRAM/ERASE CONTROLLER
   – Embedded Byte Program and Block/Chip
      Erase algorithms
   – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ FOR USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Device Code: 3Bh

ST-Microelectronics
STMicroelectronics
Description : 2 Mbit (256Kb x8, Boot Block) 3V supply Low Pin Count Flash Memory

SUMMARY DESCRIPTION
The M50LPW002 is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

FEATURES SUMMARY
supply VOLTAGE
    – VCC = 3 V to 3.6 V for Program, Erase and Read Operations
    – VPP = 12 V for Fast Program and Fast Erase (optional)
■ TWO INTERFACES
    – Low Pin Count (LPC) Standard Interface for embedded operation with PC Chipsets.
    – Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.
■ LOW PIN COUNT (LPC) HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33 MHz PCI clock
■ PROGRAMMING TIME
    – 10 µs typical
    – Quadruple Byte Programming Option
■ 7 MEMORY Blocks
    – 1 Boot Block (Top Location)
    – 4 Main Blocks and 2 Parameter Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program, Block Erase and Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
    – Read other Blocks during Program/Erase Suspend
    – Program other Blocks during Erase Suspend
■ FOR USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 31h

ST-Microelectronics
STMicroelectronics
Description : 16 Mbit (2Mb x8, Boot Block) 3V supply Low Pin Count Flash Memory

DESCRIPTION
The M50LPW116 is a 16 Mbit (2Mb x8) nonvolatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming, and fast erasing, an optional 12V power supply can be used to reduce the programming and the erasing times.

supply VOLTAGE
    – VCC = 3V to 3.6V for Program, Erase and Read Operations
    – VPP = 12V for Fast Program and Fast Erase
■ TWO INTERFACES
    – Low Pin Count (LPC) Standard Interface for embedded operation with PC Chipsets.
    – Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility.
■ LOW PIN COUNT (LPC) HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33 MHz PCI clock
■ BYTE PROGRAMMING TIME
    – Single Byte Mode: 10µs (typical)
    – Quadruple Byte Mode: 2.5µs (typical)
■ 50 MEMORY Blocks
    – 1 Boot Block
    – 18 Parameter and 31 Main Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program and Block/Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 30h

Description : 64 Mbit (4Mb x16, Boot Block)3V supply Flash Memory

SUMMARY DESCRIPTION

The M28W640C is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the Block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQallows to drive the I/O pin down to 1.65V. An optional 12V VPPpower supply is provided to speed up customer programming.



FEATURES SUMMARY

supply VOLTAGE

–VDD= 2.7V to 3.6V Core Power supply

–VDDQ= 1.65V to 3.3V for Input/Output

–VPP= 12V for fast Program (optional)

■ACCESS TIME

– 3.0V to 3.6V: 80ns

– 2.7V to 3.6V: 90ns

■PROGRAMMING TIME:

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

■COMMON FLASH INTERFACE

■MEMORY Blocks

Parameter Blocks (Top or Bottom location)

– Main Blocks

Block LOCKING

– All Blocks locked at Power Up

– Any combination of Blocks can be locked

–WPfor Block Lock-Down

■SECURITY

– 128 bit user Programmable OTP cells

– 64 bit unique device identifier

– One Parameter Block Permanently Lockable

■AUTOMATIC STAND-BY MODE

■PROGRAM and ERASE SUSPEND

■100,000 PROGRAM/ERASE CYCLES per Block

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W640CT: 8848h

– Bottom Device Code, M28W640CB: 8849h


Description : 2 Mbit (256Kb x8, Boot Block) 3V supply Firmware Hub Flash Memory

SUMMARY DESCRIPTION
The M50FW002 is a 2 Mbit (256Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times.

FEATURES SUMMARY
supply VOLTAGE
    – VCC = 3 V to 3.6 V for Program, Erase and Read Operations
    – VPP = 12 V for Fast Program and Fast Erase (optional)
■ TWO INTERFACES
    – Firmware Hub (FWH) Interface for embedded operation with PC Chipsets
    – Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility
■ FIRMWARE HUB (FWH) HARDWARE INTERFACE MODE
    – 5 Signal Communication Interface supporting Read and Write Operations
    – Hardware Write Protect Pins for Block Protection
    – Register Based Read and Write Protection
    – 5 Additional General Purpose Inputs for platform design flexibility
    – Synchronized with 33MHz PCI clock
    – Multi-byte Read Operation (1-byte, 16-byte, 32-byte)
■ PROGRAMMING TIME
    – 10 µs typical
    – Quadruple Byte Programming Option
■ 7 MEMORY Blocks
    – 1 Boot Block (Top Location)
    – 4 Main Blocks and 2 Parameter Blocks
■ PROGRAM/ERASE CONTROLLER
    – Embedded Byte Program, Block Erase and Chip Erase algorithms
    – Status Register Bits
■ PROGRAM and ERASE SUSPEND
■ FOR USE in PC BIOS APPLICATIONS
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code: 29h

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