Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

P/N + Description + Content Search

Search Word's :

Part Name(s) : CBT3345C CU345C SN74CBT3345CDB SN74CBT3345C SN74CBT3345CDBQR SN74CBT3345CDBR SN74CBT3345CDGVR SN74CBT3345CDW SN74CBT3345CDWR SN74CBT3345CPW Texas-Instruments
Texas Instruments
Description : 8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT3345C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT3345C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.
The SN74CBT3345C is organized as an 8-BIT BUS SWITCH WITH two output-enable (OE, OE) inputs. When OE is high or OE is low, the BUS SWITCH is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the BUS SWITCH is OFF and the high-impedance state exists between the A and B ports.

UNDERSHOOT PROTECTION for Off-Isolation on
   A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero
   Propagation Delay
● Low ON-State Resistance (ron)
   Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
   Loading and Signal Distortion
   (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
   UNDERSHOOT Clamp Diodes
● Low Power Consumption
   (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
   (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can Be Driven by TTL or
   5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode
   Operation
● Latch-Up Performance Exceeds 100 mA Per
   JESD 78, Class II
● ESD Performance Tested Per JESD 22
   − 2000-V Human-Body Model
      (A114-B, Class II)
   − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
   Applications: USB Interface, Memory
   Interleaving, BUS Isolation, Low-Distortion
   Signal Gating

Part Name(s) : CBT16210C SN74CBT16210C SN74CBT16210CDGG SN74CBT16210CDGV 74CBT16210CDGGRE4 74CBT16210CDGGRG4 74CBT16210CDGVRE4 74CBT16210CDGVRG4 SN74CBT16210CDGGR SN74CBT16210CDGVR TI
Texas Instruments
Description : 20-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT16210C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT16210C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.
The SN74CBT16210C is organized as two 10-bit BUS SWITCHes WITH separate output-enable (1OE, 2OE) inputs. It can be used as two 10-bit BUS SWITCHes or as one 20-bit BUS SWITCH. When OE is low, the associated 10-bit BUS SWITCH is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 10-bit BUS SWITCH is OFF, and the high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

● Member of the Texas Instruments WideBUS™ Family
UNDERSHOOT PROTECTION for Off-Isolation on
   A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero
   Propagation Delay
● Low ON-State Resistance (ron)
   Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
   Loading and Signal Distortion
   (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
   UNDERSHOOT Clamp Diodes
● Low Power Consumption
   (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
   (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per
   JESD 78, Class II
● ESD Performance Tested Per JESD 22
   − 2000-V Human-Body Model
      (A114-B, Class II)
   − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
   Applications: PCI Interface, Memory
   Interleaving, BUS Isolation, Low-Distortion
   Signal Gating

Part Name(s) : SN74CBT3244C SN74CBT3244CDB SN74CBT3244CDBQR SN74CBT3244CDBR SN74CBT3244CDGVR SN74CBT3244CDW SN74CBT3244CDWR SN74CBT3244CPW SN74CBT3244CPWR SN74CBT3244CRGYR Texas-Instruments
Texas Instruments
Description : B-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT3244C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT3244C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.
   
UNDERSHOOT PROTECTION for Off-Isolation on
    A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero
    Propagation Delay
● Low ON-State Resistance (ron)
    Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
    UNDERSHOOT Clamp Diodes
● Low Power Consumption
    (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
    (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)   
● Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode
    Operation
● Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model
        (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
Applications: USB Interface, Memory
Interleaving, BUS Isolation, Low-Distortion
Signal Gating
   

Part Name(s) : SN74CBT3345C SN74CBT3345CDBQRE4 SN74CBT3345CDBQRG4 SN74CBT3345CDBRE4 SN74CBT3345CDGVRE4 SN74CBT3345CDWE4 SN74CBT3345CDWRE4 SN74CBT3345CPWE4 SN74CBT3345CPWRE4 SN74CBT3345CRGYRG4 TI
Texas Instruments
Description : 8-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT3345C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT3345C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.
The SN74CBT3345C is organized as an 8-BIT BUS SWITCH WITH two output-enable (OE, OE) inputs. When OE is high or OE is low, the BUS SWITCH is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is low and OE is high, the BUS SWITCH is OFF and the high-impedance state exists between the A and B ports.

UNDERSHOOT PROTECTION for Off-Isolation on
   A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero
   Propagation Delay
● Low ON-State Resistance (ron)
   Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
   Loading and Signal Distortion
   (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
   UNDERSHOOT Clamp Diodes
● Low Power Consumption
   (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
   (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can Be Driven by TTL or
   5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode
   Operation
● Latch-Up Performance Exceeds 100 mA Per
   JESD 78, Class II
● ESD Performance Tested Per JESD 22
   − 2000-V Human-Body Model
      (A114-B, Class II)
   − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
   Applications: USB Interface, Memory
   Interleaving, BUS Isolation, Low-Distortion
   Signal Gating


Part Name(s) : CBT16244C CY244C SN74CBT16244C SN74CBT16244CDGG SN74CBT16244CDGV 74CBT16244CDGGRE4 74CBT16244CDGGRG4 74CBT16244CDGVRE4 74CBT16244CDGVRG4 SN74CBT16244CDGGR TI
Texas Instruments
Description : 16-BIT FET BUS SWITCH 5-V BUS SWITCH WITH-2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT16244C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT16244C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.

● Member of the Texas Instruments WideBUS™ Family
UNDERSHOOT PROTECTION for Off-Isolation on A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide UNDERSHOOT Clamp Diodes
● Low Power Consumption (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
− 2000-V Human-Body Model (A114-B, Class II)
− 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, BUS Isolation, Low-Distortion Signal Gating

Part Name(s) : SN74CBT3306C SN74CBT3306CD SN74CBT3306CDR SN74CBT3306CPW SN74CBT3306CPWR SN74CBT3306CPWRE4 SN74CBT3306CPWRG4 TI
Texas Instruments
Description : DUAL FET BUS SWITCH 5-V BUS SWITCH WITH -2 -V UNDERSHOOT PROTECTION View

description/ordering information

The SN74CBT3306C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT3306C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an  UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.





UNDERSHOOT PROTECTION for Off-Isolation on A and B Ports Up To −2 V

● Bidirectional Data Flow, WITH Near-Zero Propagation Delay

● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)

● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)

● Data and Control Inputs Provide UNDERSHOOT Clamp Diodes

● Low Power Consumption (ICC = 3 µA Max)

● VCC Operating Range From 4 V to 5.5 V

● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)

● Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs

● Ioff Supports Partial-Power-Down Mode Operation

● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

● ESD Performance Tested Per JESD 22

  − 2000-V Human-Body Model (A114-B, Class II)

  − 1000-V Charged-Device Model (C101)

● Supports Both Digital and Analog Applications: USB Interface, BUS Isolation, Low-Distortion  Signal Gating



 


Part Name(s) : SN74CBT6845CPWRG4 SN74CBT6845CPWRE4 SN74CBT6845CPWG4 SN74CBT6845CPWE4 SN74CBT6845CDWRG4 SN74CBT6845CDWRE4 SN74CBT6845CDWG4 SN74CBT6845CDWE4 SN74CBT6845CDBRG4 SN74CBT6845CDBRE4 TI
Texas Instruments
Description : 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT6845C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT6845C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage (BIASV) to minimize live-insertion noise.

UNDERSHOOT PROTECTION for Off-Isolation on
   A and B Ports Up To −2 V
● B-Port Outputs Are Precharged by Bias
   Voltage (BIASV) to Minimize Signal
   Distortion During Live Insertion and
   Hot-Plugging
● Supports PCI Hot Plug
● Bidirectional Data Flow, WITH Near-Zero
   Propagation Delay
● Low ON-State Resistance (ron)
   Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
   Loading and Signal Distortion
   (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
   UNDERSHOOT Clamp Diodes
● Low Power Consumption
   (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
   (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per
   JESD 78, Class II
● ESD Performance Tested Per JESD 22
   − 2000-V Human-Body Model
      (A114-B, Class II)
   − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
   Applications: PCI Interface, Memory
   Interleaving, BUS Isolation, Low-Distortion
   Signal Gating

Part Name(s) : CBT3244C CU244C SN74CBT3244CDBQ SN74CBT3244CDGV SN74CBT3244CRGY SN74CBT3244C SN74CBT3244CDB SN74CBT3244CDBQR SN74CBT3244CDBQRE4 SN74CBT3244CDBR TI
Texas Instruments
Description : B-BIT FET BUS SWITCH 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBT3244C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBT3244C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.
   
UNDERSHOOT PROTECTION for Off-Isolation on
    A and B Ports Up To −2 V
● Bidirectional Data Flow, WITH Near-Zero
    Propagation Delay
● Low ON-State Resistance (ron)
    Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 5.5 pF Typical)
● Data and Control Inputs Provide
    UNDERSHOOT Clamp Diodes
● Low Power Consumption
    (ICC = 3 µA Max)
● VCC Operating Range From 4 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels
    (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)   
● Control Inputs Can Be Driven by TTL or
    5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode
    Operation
● Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model
        (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog
Applications: USB Interface, Memory
Interleaving, BUS Isolation, Low-Distortion
Signal Gating
   

Part Name(s) : CBTD3384C CC384C SN74CBTD3384C SN74CBTD3384CDB SN74CBTD3384CDBQ SN74CBTD3384CDGV 74CBTD3384CDGVRE4 74CBTD3384CDGVRG4 SN74CBTD3384CDBQR SN74CBTD3384CDBR Texas-Instruments
Texas Instruments
Description : 10-BIT FET BUS SWITCH WITH LEVEL SHIFTING 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION View

description/ordering information
The SN74CBTD3384C is a high-speed TTL-compatible FET BUS SWITCH WITH low ON-state resistance (ron), allowing for minimal propagation delay. This device features an integrated diode in series WITH VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active UNDERSHOOT-PROTECTION Circuitry on the A and B ports of the SN74CBTD3384C provides PROTECTION for UNDERSHOOT up to −2 V by sensing an UNDERSHOOT event and ensuring that the SWITCH remains in the proper OFF state.

UNDERSHOOT PROTECTION for Off-Isolation on A and B Ports Up To −2 V
● Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
● Bidirectional Data Flow, WITH Near-Zero Propagation Delay
● Low ON-State Resistance (ron) Characteristics (ron = 3 Ω Typical)
● Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
● Data and Control Inputs Provide UNDERSHOOT Clamp Diodes
● VCC Operating Range From 4.5 V to 5.5 V
● Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
● Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
● Ioff Supports Partial-Power-Down Mode Operation
● Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
● ESD Performance Tested Per JESD 22
    − 2000-V Human-Body Model (A114-B, Class II)
    − 1000-V Charged-Device Model (C101)
● Supports Both Digital and Analog Applications: Memory Interleaving, BUS Isolation, Low-Distortion Signal Gating

12345678910 Next



All Rights Reserved© datasheetq.com 2015 - 2019  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]