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Description : 16 Mbit 1Mb x16 / boot block flash memory and 2 Mbit 128Kb x16 SRAM / Multiple memory Product

SUMMARY DESCRIPTION

The M36W216TI is a low voltage Multiple memory Product which combines two memory devices; a

16 Mbit boot block flash memory and a 2 Mbit SRAM. Recommended operating conditions do not allow both the flash memory and the SRAM memory to be active at the same time. The memory is offered in a Stacked LFBGA66 (12x8mm, 8 x 8 active ball, 0.8 mm pitch) package and is supplied with all the bits erased (set to ‘1’).



FEATURES SUMMARY

■MULTIPLE memory PRODUCT

– 16 Mbit (1Mb x 16) boot block flash memory

– 2 Mbit (128Kb x 16) SRAM

supply VOLTAGE

–VDDF= VDDS= 2.7V to 3.3V

–VDDQF= VDDS= 2.7V to 3.3V

–VPPF= 12V for Fast Program (optional)

■ACCESS TIME: 70ns, 85ns

■LOW POWER CONSUMPTION

■ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W216TI: 88CEh

– Bottom Device Code, M36W216BI: 88CFh


Description : 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory

The M29W800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply.



On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.




Description : 16 Mbit (1Mb x16, boot block) flash memory and 4Mbit (256Kb x16) SRAM, Multiple memory Product

SUMMARY DESCRIPTION
The M36W416TG is a low voltage Multiple memory Product which combines two memory devices; a 16 Mbit boot block flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the flash memory and the SRAM memory to be active at the same time.

FEATURES SUMMARY
■ MULTIPLE memory PRODUCT
    – 16 Mbit (1Mb x 16) boot block flash memory
    – 4 Mbit (256Kb x 16) SRAM
supply VOLTAGE
    – VDDF = VDDS = 2.7V to 3.3V
    – VDDQF = VDDS = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70ns, 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W416TG: 88CEh
    – Bottom Device Code, M36W416BG: 88CFh

flash memory
memory blockS
    – Parameter blocks (Top or Bottom location)
    – Main blocks
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
block LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per block
■ COMMON flash INTERFACE
    – 64 bit Security Code
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter block permanently lockable

SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 8 Mbit (1Mb x8, boot block) flash memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-memory Product

DESCRIPTION
The M36W108 is multi-chip device containing an 8 Mbit boot block flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch.

■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
supply VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (flash chip)
    – Stand-by: 100µA max. (flash chip)

flash memory
■ 8 Mbit (1Mb x 8) boot block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
memory blockS
    – boot block (Top or Bottom location)
    – Parameter and Main blocks
block, MULTI-block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108T: D2h
    – Device Code, M36W108B: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

Description : 2-MBIT (128K x 16, 256K x 8) boot block flash memory FAMILY

Intel’s 2-Mbit flash memory Family is an extension of the boot block Architecture which includes block-selective erasure, automated write and erase operations and standard microprocessor interface. The 2 Mbit flash memory Family enhances the boot block Architecture by adding more density and blocks, x8/x16 input/output control, very high speed, low power, an industry standard ROM compatible pinout. The 2-Mbit flash family allows for an easy upgrade to Intel’s 4-Mbit boot block flash memory Family.

■ x8/x16 Input/Output Architecture
    — A28F200BX-T, A28F200BX-B
    — For High Performance and High Integration 16-bit and 32-bit CPUs
■ Optimized High Density blocked Architecture
    — One 16 KB Protected boot block
    — Two 8 KB Parameter blocks
    — One 96 KB Main block
    — One 128 KB Main block
    — Top or Bottom boot Locations
■ Extended Cycling Capability
    — 1,000 block Erase Cycles
■ Automated Word/Byte Write and block Erase
    — Command User Interface
    — Status Register
    — Erase Suspend Capability
■ SRAM-Compatible Write Interface
■ Automatic Power Savings Feature
    — 1 mA Typical ICC Active Current in
    Static Operation
■ Hardware Data Protection Feature
    — Erase/Write Lockout during Power Transitions
■ Very High-Performance Read
    — 90 ns Maximum Access Time
    — 45 ns Maximum Output Enable Time
■ Low Power Consumption
    — 25 mA Typical Active Read Current
■ Deep Power-Down/Reset Input
    — Acts as Reset for boot Operations
■ Automotive Temperature Operation
    — b40§C to a125§C
■ Write Protection for boot block
■ Industry Standard Surface Mount Packaging
    — JEDEC ROM Compatible 44-Lead PSOP
■ 12V Word/Byte Write and block Erase
    — VPP e 12V g5% Standard
■ ETOXTM III flash Technology
    — 5V Read
■ Independent Software Vendor Support

Description : 8 Mbit (1Mb x8, boot block) flash memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-memory Product

DESCRIPTION
The M36W108A is multi-chip device containing an 8 Mbit boot block flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0mm ball pitch and LGA48 1.0mm land pitch.

supply VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (flash chip)
    – Stand-by: 100µA max. (flash chip)

flash memory
■ 8 Mbit (1Mb x 8) boot block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
■ SECURITY PROTECTION memory AREA
■ INSTRUCTION ADDRESS CODING: 3 digits
memory blockS
    – boot block (Top or Bottom location)
    – Parameter and Main blocks
block, MULTI-block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108AT: D2h
    – Device Code, M36W108AB: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

Description : 32 Mbit (2Mb x16, boot block) flash memory and 8 Mbit (512Kb x16) SRAM, Multiple memory Product

SUMMARY DESCRIPTION
The M36W832TE is a low voltage Multiple memory Product which combines two memory devices; a 32 Mbit boot block flash memory and an 8 Mbit SRAM. Recommended operating conditions do not allow both the flash and the SRAM to be active at the same time.

FEATURES SUMMARY
supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIMES: 70ns and 85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W832TE: 88BAh
    – Bottom Device Code, M36W832BE: 88BBh

flash memory
■ 32 Mbit (2Mb x16) boot block
    – 8 x 4 KWord Parameter blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
    – Quadruple Word Programming Option
block LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for block Lock-Down
■ AUTOMATIC STANDBY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per block
■ COMMON flash INTERFACE
■ SECURITY
    – 128 bit user programmable OTP cells
    – 64 bit unique device identifier

SRAM
■ 8 Mbit (512Kb x 16)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 8 Mbit (1Mb x8, boot block) flash memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-memory Product

DESCRIPTION
The M36W108 is multi-chip device containing an 8 Mbit boot block flash memory and a 1 Mbit of SRAM. The device is offered in the new Chip Scale Package solutions: LBGA48 1.0 mm ball pitch and LGA48 1.0 mm land pitch.

■ M36W108T and M36W108B are replaced respectively by the M36W108AT and M36W108AB
supply VOLTAGE
    – VCCF = VCCS = 2.7V to 3.6V: for Program, Erase and Read
■ ACCESS TIME: 100ns
■ LOW POWER CONSUMPTION
    – Read: 40mA max. (SRAM chip)
    – Stand-by: 30µA max. (SRAM chip)
    – Read: 10mA max. (flash chip)
    – Stand-by: 100µA max. (flash chip)

flash memory
■ 8 Mbit (1Mb x 8) boot block ERASE
■ PROGRAMMING TIME: 10µs typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Program Byte-by-Byte
    – Status Register bits and Ready/Busy Output
memory blockS
    – boot block (Top or Bottom location)
    – Parameter and Main blocks
block, MULTI-block and CHIP ERASE
■ ERASE SUSPEND and RESUME MODES
    – Read and Program another block during Erase Suspend
■ 100,000 PROGRAM/ERASE CYCLES per block
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Device Code, M36W108T: D2h
    – Device Code, M36W108B: DCh

SRAM
■ 1 Mbit (128Kb x 8)
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS
■ LOW VCC DATA RETENTION: 2V

Description : 32 Mbit (2Mb x16, boot block) flash memory and 4 Mbit (256K x16) SRAM, Multiple memory Product

SUMMARY DESCRIPTION
The M36W432 is a low voltage Multiple memory Product which combines two memory devices; a 32 Mbit boot block flash memory and a 4 Mbit SRAM. Recommended operating conditions do not allow both the flash and the SRAM to be active at the same time.

FEATURES SUMMARY
supply VOLTAGE
    – VDDF = 2.7V to 3.3V
    – VDDS = VDDQF = 2.7V to 3.3V
    – VPPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70,85ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – Top Device Code, M36W432T: 88BAh
    – Bottom Device Code, M36W432B: 88BBh

flash memory
■ 32 Mbit (2Mb x16) boot block
    – 8 x 4 KWord Parameter blocks (Top or Bottom Location)
■ PROGRAMMING TIME
    – 10µs typical
    – Double Word Programming Option
block LOCKING
    – All blocks locked at Power up
    – Any combination of blocks can be locked
    – WPF for block Lock-Down
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ COMMON flash INTERFACE
    – 64 bit Security Code
■ SECURITY
    – 64 bit user programmable OTP cells
    – 64 bit unique device identifier
    – One parameter block permanently lockable

SRAM
■ 4 Mbit (256K x 16 bit)
■ ACCESS TIME: 70ns
■ LOW VDDS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS

Description : 8 Mbit (1Mb x 8, boot block) 3V supply flash memory

Summary description
The M29W008E is a 8 Mbit (1Mb x 8) non-volatile flash memory that can be read, erased at block, multi-block or chip level and programmed at Byte level. These operations are performed using a single 2.7V to 3.6V VCC supply voltage. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed using standard programming equipment.

FEATURES SUMMARY
■ ACCESS TIMES: 70ns, 90ns
■ PROGRAMMING TIME: 10µs per Byte typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
    – Embedded Byte Program Algorithm
    – Status Register bits and Ready/Busy Output
■ 19 memory blockS
    – 1 boot block (Top or Bottom location)
    – 2 Parameter and 16 Main blocks
block, MULTI-block and CHIP ERASE
■ MULTIPLE block PROTECTION/ TEMPORARY UNPROTECTION MODE
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
    – Standby and Automatic Standby modes
■ 100,000 PROGRAM/ERASE CYCLES per block
■ 20 YEARS DATA RETENTION
    – Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
    – Manufacturer Code: 20h
    – M29W008ET Device Code: D2h
    – M29W008EB Device Code: DCh
■ ECOPACK® TSOP40 PACKAGE

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